THE EFFECT OF CATHODE MATERIALS ON REACTIVE ION ETCHING OF SILICON AND SILICON DIOXIDE IN A CF4 PLASMA.EPHRATH LM.1978; J. ELECTRON. MATER.; U.S.A.; DA. 1978; VOL. 7; NO 3; PP. 415-428; BIBL. 11 REF.Article

ION ETCHING OF THIN WINDOWS IN SILICON.SPENCER EG; LENZO PV; SCHMIDT PH et al.1974; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1974; VOL. 11; NO 5; PP. 863-864; BIBL. 9 REF.Article

ION BEAM ETCHING WITH REACTIVE GASESBOLLINGER LD.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 1; PP. 99-108; BIBL. 15 REF.Article

DRY ETCHING AIDS IN REALIZATION OF VLS/SMITO H.1981; JEE, J. ELECTRON. ENG.; ISSN 0385-4507; JPN; DA. 1981; VOL. 18; NO 177; PP. 81-86Article

LES DIVERS ASPECTS DE L'USINAGE IONIQUE APPLIQUE AUX SYSTEMES METALLIQUES DES TRANSISTORS BIPOLAIRES HYPERFREQUENCES.PESTIE JP; DUMONTET H; ANDRIEU JP et al.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 161-170; BIBL. 7 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVEME CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

VERBESSERTES IONENAETZVERFAHREN FUER INTEGRIERTE SCHALTUNGEN = AMELIORATION DU PROCEDE DE FABRICATION DE CIRCUITS INTEGRES PAR BOMBARDEMENT IONIQUE1972; INTERNATION. ELEKTRON. RDSCH.; DTSCH.; DA. 1972; VOL. 26; NO 9; PP. 223-224; ABS. ANGL. FRSerial Issue

AN ION (GA) BEAM EXPOSUREKUWANO H.1982; BULLETIN OF THE JAPAN SOCIETY OF PRECISION ENGINEERING; ISSN 0582-4206; JPN; DA. 1982; VOL. 16; NO 4; PP. 273-274; BIBL. 3 REF.Article

ASYMMETRIC TRIANGULAR GRATING PROFILES WITH 90^O GROOVE ANGLES PRODUCED BY ION-BEAM EROSIONJOHNSON LF; INGERSOLL KA.1981; APPL. OPT.; ISSN 0003-6935; USA; DA. 1981; VOL. 20; NO 17; PP. 2951-2961; BIBL. 22 REF.Article

COMPARISON OF THE PROPERTIES OF DIFFERENT MATERIALS USED AS MASKS FOR ION-BEAM ETCHING.CANTAGREL M.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 1340-1343; BIBL. 10 REF.; (SYMP. ELECTRON ION PHOTON BEAM TECHNOL. 13. PROC.; COLORADO SPRINGS; 1975)Conference Paper

APPLICATION DE LA GRAVURE IONIQUE A LA MICROELECTRONIQUE.DUBEE A.1974; MICROELECTRON. AND RELIABIL.; G.B.; DA. 1974; VOL. 13; NO 6; PP. 455-462; H.T. 3; ABS. ANGL.; BIBL. 12 REF.Article

ION-BEAM-INDUCED-CURRENT (IBIC) MONITORING OF UNIFORM AND SELECTIVE ION-ETCHING PROCESSES IN LAYERED STRUCTURESSAKAKI H; SEKIGUCHI Y; YOKOYAMA K et al.1981; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1981; VOL. 19; NO 1; PP. 23-27; BIBL. 5 REF.Article

NEUTRALISED ION BEAM MILLING: ANOMALOUS SPUTTER YIELD BEHAVIOURPITT CW; SPINGH SP.1980; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1980; VOL. 16; NO 19; PP. 721-722; BIBL. 12 REF.Article

A NEW PRODUCTION TECHNIQUE: ION MILLING. II: APPLICATIONSBOLLINGER D; FINK R.1980; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1980; VOL. 23; NO 12; PP. 97-103; BIBL. 10 REF.Article

REALISATION DE DESSINS A FINE DEFINITION PAR GRAVURE PAR FAISCEAU IONIQUEGOKAN H; ESHO S.1977; J. VACUUM SOC. JAP.; JAP.; DA. 1977; VOL. 20; NO 11; PP. 386-393; ABS. ANGL.; BIBL. 5 REF.Article

INFLUENCE OF MASK MATERIALS ON ION-ETCHED STRUCTURES.DIMIGEN H; LUTHJE H; HUBSCH H et al.1976; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1976; VOL. 13; NO 4; PP. 976-980; BIBL. 21 REF.; (PHYS. COMPD. SEMICOND. INTERFACES. ANNU. CONF 3. PROC.; SAN DIEGO, CALIF.; 1976)Article

ION ETCHING FOR PATTERN DELINEATION.MELLIAR SMITH CM.1976; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1976; VOL. 13; NO 5; PP. 1008-1022; BIBL. 1 P.Article

ATTAQUE IONIQUE DES MICROSTRUCTURES DANS LA PRODUCTION DES SUPERGRANDS CIRCUITS INTEGRESDANILIN BS; KIREEV V YU.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 4; PP. 302-309; BIBL. 22 REF.Article

EVOLUTION D'UNE SURFACE SOUMISE A UN BOMBARDEMENT IONIQUE.DUCOMMUN JP.1974; ; S.L.; DA. 1974; PP. 1-99; H.T. 8; BIBL. 1 P. 1/2; (THESE DOCT. 3E. CYCLE, SPEC. CRISTALLOGR., MENTION SCI. MATER.; PARIS VI)Thesis

CLEANING OF GAAS SURFACES WITH LOW-DAMAGE EFFECTS USING ION-BEAM MILLINGLINDSTROM C; TIHANYI P.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 711-713; BIBL. 7 REF.Article

PATTERN PROFILE CONTROL UTILIZING SHADOWING EFFECT IN OBLIQUE ION-BEAM ETCHINGGOKAN H; ESHO S.1981; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1981; VOL. 19; NO 1; PP. 28-31; BIBL. 4 REF.Article

A GAP REDUCTION TECHNIQUE FOR OBTAINING SUBMICRON GEOMETRIES UTILIZING REDEPOSITION EFFECTGOKAN H; ESHO S.1981; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1981; VOL. 19; NO 1; PP. 32-35; BIBL. 8 REF.Article

ANWENDUNG DES LOUEN-AETZENS ZUR ERZEUGUNG FEINER STRUKTUREN IN DUENNEN SCHICHTEN. = APPLICATION DE LA GRAVURE IONIQUE POUR LA FABRICATION DE STRUCTURES SUPERFINES DE COUCHES MINCESWECHSUNG R; BRAUER W.1975; VAKUUM-TECH.; DTSCH.; DA. 1975; VOL. 24; NO 6; PP. 157-166; ABS. ANGL. FR.; BIBL. 19 REF.Article

AN IMPROVED FORM OF THE OSCILLATING ELECTRON ELECTROSTATIC ION SOURCE FOR ION ETCHING.GHANDER AM; FITCH RK.1974; VACUUM; G.B.; DA. 1974; VOL. 24; NO 10; PP. 483-487; BIBL. 9 REF.; (CONF. LOW ENERGY ION-SURF. INTERACTIONS. PROC.)Conference Paper

SURFACE STUDIES OF AND A MASS BALANCE MODEL FOR AR⁺ ION-ASSISTED CL₂ ETCHING OF SIBARKER RA; MAYER TM; PEARSON WC et al.1983; JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. B: MICROELECTRONICS PROCESSING AND PHENOMENA; ISSN 512982; USA; DA. 1983; VOL. 1; NO 1; PP. 37-42; BIBL. 17 REF.Article

PATTERN FABRICATION BY OBLIQUE INCIDENCE ION-BEAM ETCHINGGOKAN H; ESHO S.1981; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1981; VOL. 18; NO 1; PP. 23-27; BIBL. 6 REF.Article