REACTIVE ION ETCHING OF POLYSILICON AND TANTALUM SILICIDEBEINVOGL W; HASLER B.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 125-130; BIBL. 26 REF.Article

HIGH RATE ALUMINIUM ETCHING IN A BATCH LOADED REACTIVE ION ETCHERSAIA RJ; GOROWITZ B.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 247-251Article

NON CONTACT SURFACE TEMPERATURE MEASUREMENT DURING REACTIVE-ION ETCHING USING FLUORESCENT POLYMER FILMSKOLODNER P; KATZIR A; HARTSOUGH N et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 749-751; BIBL. 6 REF.Article

MIKORSTRUKTURIERUNG VON FOTOSCHABLONEN MITTELS NICHTREAKTIVER HOCHFREQUENZIONENAETZUGN = MICROSTRUCTURATION DE MODELES PHOTO OU MILIEU DE CIRCUITS DE HAUTE FREQUENCE NON REACTIFSSPANGENBERG B; GORANCHEV BG; ORLINOV VI et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 87; NO 4; PP. 313-322; ABS. ENG; BIBL. 10 REF.Article

RIE OF SIO₂ IN DOPED AND UNDOPED FLUOROCARBON PLASMASNORSTROEM H; BUCHTA R; RUNOVC F et al.1982; VACUUM; ISSN 0042-207X; GBR; DA. 1982; VOL. 32; NO 12; PP. 737-745; BIBL. 29 REF.Article

ALUMINIUM REACTIVE ION ETCHING EMPLOYING CCL₄+CL₂ MIXTUREHORIJKE Y; YAMAZAKI T; SHIBAGAKI M et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 10; PART. 1; PP. 1412-1420; BIBL. 22 REF.Article

REACTIVE ION ETCHING FOR VLSIEPHRATH LM.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1315-1319; BIBL. 15 REF.Article

REACTIVE ION ETCHING OF TA-SILICIDE/POLYSILICON DOUBLE LAYERS FOR THE FABRICATION OF INTEGRATED CIRCUITSMATTAUSCH HJ; HASLER B; BEINVOGL W et al.1983; JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. B: MICROELECTRONICS PROCESSING AND PHENOMENA; ISSN 512982; USA; DA. 1983; VOL. 1; NO 1; PP. 15-22; BIBL. 17 REF.Article

REACTIVE ION BEAM ETCHING OF GAAS IN CCL₄POWELL RA.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 3; PART. 2; PP. L170-L172; BIBL. 18 REF.Article

MECHANICAL STABILITY OF REACTIVE ION-ETCHED POLY(METHYL METHACRYLATE) AND POLYIMIDE MICROSTRUCTURES IN TRILEVEL ELECTRON BEAM LITHOGRAPHYORO JA; WOLFE JC.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 11; PART. 1; PP. 7379-7384; BIBL. 20 REF.Article

SELECTIVE REACTIVE ION BEAM ETCHING OF SIO₂ OVER POLYCRYSTALLINE SIHEATH BA.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 2; PP. 396-402; BIBL. 16 REF.Article

HIGH RESOLUTION TRILEVEL RESISTNAMATSU H; OZAKI Y; HIRATA K et al.1982; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1982; VOL. 21; NO 2; PP. 672-676; BIBL. 9 REF.Article

RIE CONTAMINATION OF ETCHED SILICON SURFACESEPHRATH LM; BENNETT RS.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 8; PP. 1822-1826; BIBL. 8 REF.Article

DEPOSITION AND REACTIVE ION ETCHING OF MOLYBDENUMABDELHAK BENZAOULA; WOLFE JC; ORO JA et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 1; PP. 122-123; BIBL. 18 REF.Article

DRY DEVELOPMENT OF ION BEAM EXPOSED PMMA RESISTADESIDA I; CHINN JD; RATHBUN L et al.1982; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1982; VOL. 21; NO 2; PP. 666-671; BIBL. 26 REF.Article

Defect-free reactive ion etching of silicon by SiF₄/Cl₂ plasmaMATSUMOTO, H; SUGANO, T.Japanese journal of applied physics. 1983, Vol 22, Num 6, pp 963-967, issn 0021-4922Article

Reactive ion beam etching of MoSi₂ in CCl₄POWELL, R. A.Journal of the Electrochemical Society. 1983, Vol 130, Num 5, pp 1164-1167, issn 0013-4651Article

Ion beam etching of InP. II: Reactive etching with halogen-based sources gasesYUBA, Y; GAMO, K; XI GUAN HE et al.Japanese journal of applied physics. 1983, Vol 22, Num 7, pp 1211-1214, issn 0021-4922Article

Reactive ion etching of copper filmsSCHWARTZ, G. C; SCHAIBLE, P. M.Journal of the Electrochemical Society. 1983, Vol 130, Num 8, pp 1777-1779, issn 0013-4651Article

Reactive ion etching (RIE) techniques for micromachining applicationsLI, Y. X; WOLFFENBUTTEL, M. R; FRENCH, P. J et al.Sensors and actuators. A, Physical. 1994, Vol 41, Num 1-3, pp 317-323, issn 0924-4247Conference Paper

Sidewall tapering in reactive ion etchingNAGY, A. G.Journal of the Electrochemical Society. 1985, Vol 132, Num 3, pp 689-693, issn 0013-4651Article

Post-processing gap reduction in a micromachined resonator for vacuum pressure easurementBILLEP, Detlef; HILLER, Karla; FRÖMEL, Jorg et al.SPIE proceedings series. 2005, pp 341-350, isbn 0-8194-5831-7, 1Vol, 10 p.Conference Paper

A three-layer resist system for deep U.V. and RIE microlithography on nonplanar surfacesBASSOUS, E; EPHRATH, L. M; PEPPER, G et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 2, pp 478-484, issn 0013-4651Article

A linearly tunable capacitor fabricated by the post-CMOS processDAI, Ching-Liang; LIU, Mao-Chen; LI, Yu-Ren et al.SPIE proceedings series. 2005, pp 642-648, isbn 0-8194-5831-7, 1Vol, 7 p.Conference Paper

Fabrication of deep submicron patterns with high aspect ratio using magnetron reactive ion etching and sidewall processGAO SHIPING; CHEN MENGZHEN.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2708-2710, issn 1071-1023Conference Paper