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PLASMA PROCESSING - AN ART OR A SCIENCE.JACOB A.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 151-153Article

PLASMA-ASSISTED ETCHINGCOBURN JW.1982; PLASMA CHEM. PLASMA PROCESS.; ISSN 507814; USA; DA. 1982; VOL. 2; NO 1; PP. 1-41; BIBL. 193 REF.Article

PLASMA ETCHER CAPITAL EQUIPEMENT DESIGN TRENDSBROWN HL.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 239-241Article

DRY ETCHING AIDS IN REALIZATION OF VLS/SMITO H.1981; JEE, J. ELECTRON. ENG.; ISSN 0385-4507; JPN; DA. 1981; VOL. 18; NO 177; PP. 81-86Article

PLASMA ETCHING FOR DESMEARING AND ETCHBACKMARKSTEIN HW.1980; ELECTRON. PACKAG. PRODUCT.; USA; DA. 1980; VOL. 20; NO 1; PP. 65-68; (3 P.)Article

PLASMA ETAH MAKES ITS MARK.ALTMAN L.1976; ELECTRONICS; U.S.A.; DA. 1976; VOL. 49; NO 26; PP. 56Article

IMPORTANT CONSIDERATIONS IN SELECTING ANISOTROPIC PLASMA ETCHING EQUIPMENTBROYDO S.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 159-165; BIBL. 7 REF.Article

NEW PLASMA ETCHING EQUIPMENT PROVIDES INCREASED PRECISIONSUZUKI H.1979; J. ELECTRON. ENGNG; JPN; DA. 1979; VOL. 16; NO 153; PP. 48-50Article

PLASMA ETCHING: OVERVIEW.1978; CIRCUITS MANUF.; U.S.A.; DA. 1978; VOL. 18; NO 4; PP. 22-42; BIBL. DISSEM.Article

THE LOADING EFFECT IN PLASMA ETCHING.MOGAB CJ.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 8; PP. 1262-1268; BIBL. 10 REF.Article

MICROFABRICATION TECHNIQUE BY GAS PLASMA ETCHING METHOD.KOMIYA H; TOYODA H; KATO T et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; SUPPL. 1; PP. 19-24; BIBL. 5 REF.; (CONF. SOLID STATE DEVICES. 7. PROC.; TOKYO; 1975)Conference Paper

EVALUATION OF A PROCESS FOR ACHIEVING LOW BETWEEN-METAL CONTACT RESISTANCE IN PLASMA ETCHED POLYIMIDE VIASSMITH PK; HERNDON TO; BURKE RL et al.1983; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1983; VOL. 130; NO 1; PP. 225-227; BIBL. 4 REF.Article

VACUUM SYSTEMS CONSIDERATIONS FOR PLASMA ETCHING EQUIPMENTLAM DK; KOCH GR.1980; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1980; VOL. 23; NO 9; PP. 99-101; BIBL. 5 REF.Article

INHIBITION OF CHEMICAL SPUTTERING OF ORGANICS AND C BY TRACE AMOUNTS OF CU SURFACE CONTAMINATION. = INHIBITION DE LA PULVERISATION CHIMIQUE DE MATERIAUX ORGANIQUES ET DE C PAR DES TRACES DE CU CONTAMINANT LEUR SURFACEVOSSEN JL.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 2; PP. 544-546; BIBL. 26 REF.Article

WAFER ETCHING. MANUAL OR AUTOMATED. WET OR DRY.MARKSTEIN HW.1976; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1976; VOL. 16; NO 2 PART. 1; PP. 24-32 (6P.)Article

CHARACTERIZATION OF PLASMA ETCHING FOR SEMICONDUCTOR APPLICATIONS.RAKESH KUMAR; LADAS C.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 27-28Conference Paper

ETCHING CHARACTERISTICS OF POLYSILICON, SIO2 AND MOSI2 IN NF3 AND SF6 PLASMASKORMAN CS; CHOW TP; BOWER DH et al.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 1; PP. 115-124; BIBL. 33 REF.Article

XEF2 AND F-ATOM REACTIONS WITH SI: THEIR SIGNIFICANCE FOR PLASMA ETCHINGFLAMM DL; IBBOTSON DE; MUCHA JA et al.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 117-121; BIBL. 25 REF.Article

A SIMPLE TECHNIQUE FOR MONITORING UNDERCUTTING IN PLASMA ETCHINGGILL MD.1980; SOLID-STATE ELECTRON; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 9; PP. 995; BIBL. 2 REF.Article

ACTION D'UN PLASMA SUR UNE COUCHE DE SIO2, AL ET SUR UN SUPPORT AU SILICIUM.SAVEL'EV AA; VISHNYAKOV BA; SULIMIN AD et al.1978; FIZ. KHIM. OBRABOT. MATER.; SUN; DA. 1978; NO 3; PP. 77-79; BIBL. 5 REF.Article

A STUDY OF SI PLASMA ETCHING IN CF4+O2 GAS WITH A PLANAR-TYPE REACTORKAWATA H; SHIBANO T; MURATA K et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2720-2726; BIBL. 13 REF.Article

TRIODE PLASMA ETCHINGMINKIEWICZ VJ; CHAPMAN BN.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 3; PP. 192-193; BIBL. 9 REF.Article

NEW DEVELOPMENTS IN PLASMA ETCHING EQUIPMENT.MARKSTEIN HW.1978; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1978; VOL. 18; NO 5; PP. 55-61 (6P.)Article

SINGLE WAFER PLASMA ETCHING. II: SIO2: ETCHING MECHANISMS AND CHARACTERISTICSMULLINS C.1982; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 8; PP. 88-92; BIBL. 5 REF.Article

SOME CHEMICAL ASPECTS OF THE FLUOROCARBON PLASMA ETCHING OF SILICON AND ITS COMPOUNDSCOBURN JW; KAY E.1979; I.B.M. J. RES. DEVELOP.; USA; DA. 1979; VOL. 23; NO 1; PP. 33-41; BIBL. 24 REF.Article

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