PLASMA PROCESSING - AN ART OR A SCIENCE.JACOB A.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 151-153Article

PLASMA-ASSISTED ETCHINGCOBURN JW.1982; PLASMA CHEM. PLASMA PROCESS.; ISSN 507814; USA; DA. 1982; VOL. 2; NO 1; PP. 1-41; BIBL. 193 REF.Article

PLASMA ETCHER CAPITAL EQUIPEMENT DESIGN TRENDSBROWN HL.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 239-241Article

DRY ETCHING AIDS IN REALIZATION OF VLS/SMITO H.1981; JEE, J. ELECTRON. ENG.; ISSN 0385-4507; JPN; DA. 1981; VOL. 18; NO 177; PP. 81-86Article

PLASMA ETCHING FOR DESMEARING AND ETCHBACKMARKSTEIN HW.1980; ELECTRON. PACKAG. PRODUCT.; USA; DA. 1980; VOL. 20; NO 1; PP. 65-68; (3 P.)Article

PLASMA ETAH MAKES ITS MARK.ALTMAN L.1976; ELECTRONICS; U.S.A.; DA. 1976; VOL. 49; NO 26; PP. 56Article

EVALUATION OF A PROCESS FOR ACHIEVING LOW BETWEEN-METAL CONTACT RESISTANCE IN PLASMA ETCHED POLYIMIDE VIASSMITH PK; HERNDON TO; BURKE RL et al.1983; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1983; VOL. 130; NO 1; PP. 225-227; BIBL. 4 REF.Article

VACUUM SYSTEMS CONSIDERATIONS FOR PLASMA ETCHING EQUIPMENTLAM DK; KOCH GR.1980; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1980; VOL. 23; NO 9; PP. 99-101; BIBL. 5 REF.Article

INHIBITION OF CHEMICAL SPUTTERING OF ORGANICS AND C BY TRACE AMOUNTS OF CU SURFACE CONTAMINATION. = INHIBITION DE LA PULVERISATION CHIMIQUE DE MATERIAUX ORGANIQUES ET DE C PAR DES TRACES DE CU CONTAMINANT LEUR SURFACEVOSSEN JL.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 2; PP. 544-546; BIBL. 26 REF.Article

WAFER ETCHING. MANUAL OR AUTOMATED. WET OR DRY.MARKSTEIN HW.1976; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1976; VOL. 16; NO 2 PART. 1; PP. 24-32 (6P.)Article

CHARACTERIZATION OF PLASMA ETCHING FOR SEMICONDUCTOR APPLICATIONS.RAKESH KUMAR; LADAS C.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 27-28Conference Paper

A STUDY OF SI PLASMA ETCHING IN CF₄+O₂ GAS WITH A PLANAR-TYPE REACTORKAWATA H; SHIBANO T; MURATA K et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2720-2726; BIBL. 13 REF.Article

TRIODE PLASMA ETCHINGMINKIEWICZ VJ; CHAPMAN BN.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 3; PP. 192-193; BIBL. 9 REF.Article

NEW DEVELOPMENTS IN PLASMA ETCHING EQUIPMENT.MARKSTEIN HW.1978; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1978; VOL. 18; NO 5; PP. 55-61 (6P.)Article

SINGLE WAFER PLASMA ETCHING. II: SIO₂: ETCHING MECHANISMS AND CHARACTERISTICSMULLINS C.1982; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 8; PP. 88-92; BIBL. 5 REF.Article

SOME CHEMICAL ASPECTS OF THE FLUOROCARBON PLASMA ETCHING OF SILICON AND ITS COMPOUNDSCOBURN JW; KAY E.1979; I.B.M. J. RES. DEVELOP.; USA; DA. 1979; VOL. 23; NO 1; PP. 33-41; BIBL. 24 REF.Article

THE VERSATILE TECHNIQUE OF RF PLASMA ETCHING. I. THE ETCH PROFILE.JACOB A.1976; SOLID STATE TECHNOL.; U.S.A.; DA. 1976; VOL. 19; NO 9; PP. 70-73; BIBL. 4 REF.Article

PLASMA PROCESS DEVELOPMENT AND MONITORING VIA MASS SPECTROMETRY.BUNYARD GB; RABY BA.1977; SOLID STATE TECHNOL.; U.S.A.; DA. 1977; VOL. 20; NO 12; PP. 53-57; BIBL. 3 REF.Article

AN ALL DRY MASK MAKING PROCESS BY REVERSE GAS PLASMA ETCHINGYAMAZAKI T; TANAKA K; NAKATA H et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 10; PART. 1; PP. 1518-1519; BIBL. 6 REF.Article

SELECTIVE ETCHING OF SI RELATIVE TO SIO₂ WITHOUT UNDERCUTTING BY CBRF₃ PLASMAMATSUO S.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 9; PP. 768-770; BIBL. 7 REF.Article

A SIMPLE METHOD OF END-POINT DETERMINATION FOR PLASMA ETCHINGHITCHMAN ML; EICHENBERGER V.1980; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1980; VOL. 17; NO 6; PP. 1378-1381; BIBL. 13 REF.Article

PLASMA ETCHING OF FILMS AT HIGH RATES.HEINECKE RAH.1978; SOLID STATE TECHNOL.; U.S.A.; DA. 1978; VOL. 21; NO 4; PP. 104-106; BIBL. 7 REF.Article

PLASMA ETCHING OF SILICON AND SILICON DIOXIDE WITH HYDROGEN FLUORIDE MIXTURESSMOLINSKY G; MAYER TM; TRUESDALE EA et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 8; PP. 1770-1772; BIBL. 6 REF.Article

PROFILE CONTROL WITH D-C BIAS IN PLASMA ETCHINGBRUCE RH; REINBERG AR.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 2; PP. 393-396; BIBL. 8 REF.Article

COMPORTEMENT DES ELECTRONS-RESISTS MONONUCLEAIRES LORS DE LA GRAVURE PAR PLASMA REACTIF ET PAR GRAVURE IONIQUE REACTIVE = BEHAVIOUR OF ELECTRONS-MONONUCLEAR RESISTS DURING ETCHING BY REACTIVE PLASMA AND BY REACTIVE IONIC ETCHINGROSILIO CHARLES.1981; ; FRA; DA. 1981; DGRST/80 7 0599; 36 P.; 30 CM; BIBL. 7 REF.; ACTION CONCERTEE: COMPOSANTSReport