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DEVELOPER CHARACTERISTICS OF POLY-(METHYL METHACRYLATE) ELECTRON RESISTGREENEICH JS.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 7; PP. 970-976; BIBL. 13 REF.Article

SOLUBILITY RATE OF POLY-(METHYL METHACRYLATE), PMMA, ELECTRON-RESISTGREENEICH JS.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 12; PP. 1669-1671; BIBL. 7 REF.Article

X-RAY LITHOGRAPHY. I. DESIGN CRITERIA FOR OPTIMIZING RESIST ENERGY ABSORPTION. II. PATTERN REPLICATION WITH POLYMER MASKS. = LITHOGRAPHIE AUX RAYONS X. 1ERE PARTIE: CRITERES DE REALISATION POUR OPTIMISER L'ABSORPTION DE L'ENERGIE DANS LA RESINE. 2EME PARTIE: REPRODUCTION DE MAQUETTES AVEC DES MASQUES EN POLYMERESGREENEICH JS.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 7; PP. 434-439; BIBL. 19 REF.Article

EFFICIENT CONTINUUM SOURCES FOR X-RAY LITHOGRAPHY. = SOURCES CONTINUES EFFICACES POUR LITHOGRAPHIE PAR RAYONS XGREENEICH JS.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 11; PP. 579-581; BIBL. 15 REF.Article

TIME EVOLUTION OF DEVELOPED CONTOURS IN POLY-(METHYL METHACRYLATE) ELECTRON RESIST.GREENEICH JS.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 12; PP. 5264-5268; BIBL. 16 REF.Article

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