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MODELLING OF DUAL-GATE MESFET WITH SECOND GATE FORWARD BIASEDCHAO PC; KU WH.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 16; PP. 574-576; BIBL. 4 REF.Article

BREVET 2.302.494 (A1) (75 05932). - 26 FEVRIER 1975. REFROIDISSEUR A GRILLES PLACE A LA SORTIE D'UN FOUR UTILISE POUR LA CUISSON DES MINERAUX ET NOTAMMENT POUR LA PRODUCTION DE CLINKER.sdPatent

DUAL-GATE MOS TRANSISTORS: EXPERIMENTAL CHARACTERIZATIONBARSAN RM.1980; REV. ROUM. PHYS.; ISSN 0035-4090; ROM; DA. 1980; VOL. 25; NO 10; PP. 1137-1159; ABS. FRE; BIBL. 8 REF.Article

DUAL-GATE MOS TRANSISTORS: PHYSICAL MODELSBARSAN RM.1980; REV. ROUM. PHYS.; ISSN 0035-4090; ROM; DA. 1980; VOL. 25; NO 10; PP. 1125-1136; ABS. FRE; BIBL. 19 REF.Article

INFLUENCE OF GATE INTERVALS ON THE BEHAVIOUR OF SUBMICRON DUAL-GATE FETSALLAMANDO E; SALMER G; BOUHESS M et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 18; PP. 791-793; BIBL. 3 REF.Article

ANALYSIS AND MODELING OF DUAL-GATE MOSFET'SBARSAN RM.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 5; PP. 523-534; BIBL. 19 REF.Article

LINEAR DETECTION OF CHARGE C.C.D. WITH A DUAL GATE.HOBSON GS; LONGSTONE R; TOZER RC et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 13; PP. 400-402; BIBL. 2 REF.Article

DUAL-GATE BUCKET-BRIGADE DEVICESBARSAN RM.1980; IEEE TRANS-ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 9; PP. 1809-1816; BIBL. 17 REF.Article

MODES OF OPERATION IN DUAL-GATE MESFET MIXERSASHOKA H; TUCKER RS.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 11; PP. 428-429; BIBL. 5 REF.Article

NOVEL-N JUNCTION POLYSILICON DUAL-GATE MOSFET FOR ANALOGUE APPLICATIONSANAND KV; CHAMBERLAIN SG.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 2; PP. 58-60; BIBL. 5 REF.Article

DUAL-GATE A-SI:H THIN FILM TRANSISTORSTUAN HC; THOMPSON MJ; JOHNSON NM et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 357-359; BIBL. 12 REF.Article

DUAL-GATE CHARGE SENSING IN CHARGE-COUPLED DEVICESHOBSON GS; LONGSTONE R; TOZER RC et al.1978; I.E.E.J. SOLID-STATE ELECTRON DEVICES; GBR; DA. 1978; VOL. 2; NO 6; PP. 207-214; BIBL. 3 REF.Article

MICROWAVE WIDE-BAND MODEL OF GAAS DUAL GATE MESFET'STSIRONIS C; MEIERER R.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 2; PP. 243-251; BIBL. 20 REF.Article

Impact of high-κ dielectrics on undoped double-gate MOSFET scalingQIANG CHEN; LIHUI WANG; MEINDL, James D et al.IEEE International SOI conference. 2002, pp 115-116, isbn 0-7803-7439-8, 2 p.Conference Paper

On the Vth controllability for 4-terminal double-gate MOSFETsMASAHARA, M; LIU, Y.-X; KANEMARU, S et al.IEEE international SOI conference. 2004, pp 100-101, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper

Fin width scaling criteria of body-tied FinFET in sub-50 nm regimeHYE JIN CHO; JEONG DONG CHOE; MING LI et al.DRC : Device research conference. 2004, pp 209-210, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Bulk inversion in FinFETs and the implied insignificance of the effective gate widthKIM, S.-H; FOSSUM, J. G; TRIVEDI, V. P et al.IEEE international SOI conference. 2004, pp 145-147, isbn 0-7803-8497-0, 1Vol, 3 p.Conference Paper

A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalismSALLESE, Jean-Michel; KRUMMENACHER, Francois; PREGALDINY, Fabien et al.Solid-state electronics. 2005, Vol 49, Num 3, pp 485-489, issn 0038-1101, 5 p.Article

The dual gate power device exhibiting the IGBT and the thyristor actionUENO, K; OTSUKI, M; RYOUKAI, Y et al.IEEE electron device letters. 1995, Vol 16, Num 7, pp 328-330, issn 0741-3106Article

Extremely scaled ultra-thin-body and finfet CMOS devicesBALASUBRAMANIAN, Sdram; CHANG, Leland; CHOI, Yang-Kyu et al.Proceedings - Electrochemical Society. 2003, pp 534-545, issn 0161-6374, isbn 1-56677-376-8, 12 p.Conference Paper

Extremely scaled ultra-thin-body and finfet CMOS devicesBALASUBRAMANIAN, Sriram; CHANG, Leland; CHOI, Yang-Kyu et al.Proceedings - Electrochemical Society. 2003, pp 197-208, issn 0161-6374, isbn 1-56677-375-X, 12 p.Conference Paper

Solution space for the independent-gate asymmetric DGFETDESSAI, Gajanan; GILDENBLAT, Gennady.Solid-state electronics. 2010, Vol 54, Num 4, pp 382-384, issn 0038-1101, 3 p.Article

Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETsHARIHARAN, Venkatnarayan; VASI, Juzer; RAMGOPAL RAO, V et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 8, pp 2173-2180, issn 0018-9383, 8 p.Article

A self-aligned double-gate MOS transistor technology with individually addressable gatesZHANG, Shengdong; LIN, Xinnan; HUANG, Ru et al.IEEE International SOI conference. 2002, pp 207-208, isbn 0-7803-7439-8, 2 p.Conference Paper

Physical modeling of double-gate transistorZEBREV, G. I.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 1, 303-306Conference Paper

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