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OBSERVED ADIABATIC CORRECTIONS TO THE BORN-OPPENHEIMER APPROXIMATION FOR DIATOMIC MOLECULES WITH TEN VALENCE ELECTRONSTIEMANN E; ARNST H; STIEDA WU et al.1982; CHEM. PHYS.; ISSN 0301-0104; NLD; DA. 1982; VOL. 67; NO 2; PP. 133-138; BIBL. 17 REF.Article

ETUDE PAR DIFFRACTION ELECTRONIQUE DE LA STRUCTURE DE LA PHASE CRISTALLINE DU CARBONE C8MATYUSHENKO NN; STREL'NITSKIJ VE; GUSEV VA et al.1981; KRISTALLOGRAFIJA; ISSN 0023-4761; SUN; DA. 1981; VOL. 26; NO 3; PP. 484-487; BIBL. 7 REF.Article

MICRODISTRIBUTION OF OXYGEN IN SILICONMURGAI A; CHI JY; GATOS HC et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 5; PP. 1182-1186; BIBL. 19 REF.Article

ATOMIC PSEUDOPOTENTIAL OF POLYVALENT CRYSTALS SUCH AS SIOHKOSHI I.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 101; NO 1; PP. 373-376; ABS. GER; BIBL. 10 REF.Article

NEW C-2 X 8 UNIT CELL FOR THE GE(111) SURFACECHADI DJ; CHIANG C.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 4; PP. 1843-1846; BIBL. 16 REF.Article

AN INVESTIGATION OF THE SI(111) 7 X 7 SURFACE STRUCTURE BY RHEEDINO S.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 7; PP. 1277-1290; BIBL. 18 REF.Article

OXIDATION PRECIPITATES IN SILICONSALISBURY IG.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 1108-1109; BIBL. 13 REF.Article

HIGH-PURITY THERMAL TREATMENT OF SILICONBORCHARDT G; WEBER E; WIEHL N et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 3; PART. 1; PP. 1603-1604; BIBL. 17 REF.Article

NATURE OF THE SI(III) 7 X 7 RECONSTRUCTIONCARDILLO MJ.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 8; PP. 4279-4282; BIBL. 14 REF.Article

THE 2 X 1 RECONSTRUCTION OF THE GE (001) SURFACEFERNANDEZ JC; YANG WS; SHIH HD et al.1981; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 3; PP. L55-L60; BIBL. 11 REF.Article

TEMPERATURE DEPENDENCE OF THE ANNIHILATION OF POSITRONS IN SI CONTAINING DIVACANCIES AND QUADRIVACANCIESDANNEFAER S; KUPCA S; HOGG BG et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 22; NO 12; PP. 6135-6139; BIBL. 13 REF.Article

SEM-EBIC STUDIES OF BORON IMPLANTED SILICONIOANNOU DE; DAVIDSON SM.1980; J. MICR.; GBR; DA. 1980; VOL. 118; NO 3; PP. 337-342; BIBL. 9 REF.Article

DOSE ACCURACY AND DOPING UNIFORMITY OF ION IMPLANTATION EQUIPMENTPERLOFF DS; GAN JN; WAHL FE et al.1981; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1981; VOL. 24; NO 2; PP. 112-120; BIBL. 11 REF.Article

STRUCTURE OF SI(111)-(7 X 7)HMCRAE EG; CALDWELL CW.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 46; NO 25; PP. 1632-1635; BIBL. DISSEM.Article

X-RAY DIFFRACTION STUDY OF THE GE(001) RECONSTRUCTED SURFACEEISENBERGER P; MARRA WC.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 46; NO 16; PP. 1081-1084; BIBL. 13 REF.Article

CONSTRICTED SEGMENTS ON FAULTED DIPOLES IN GERMANIUMCHIANG SW; CARTER CB; KOHLSTEDT DL et al.1980; SCR. METALL.; ISSN 0036-9748; USA; DA. 1980; VOL. 14; NO 7; PP. 803-807; BIBL. 20 REF.Article

REEXAMINATION OF THE SI(100) SURFACE RECONSTRUCTIONCHADI DJ.1980; APPL. OPT.; ISSN 0003-6935; USA; DA. 1980; VOL. 19; NO 23; PP. 3971-3973; BIBL. 21 REF.Article

THE SHRINKAGE AND GROWTH OF OXIDATION STACKING FAULTS IN SILICON AND THE INFLUENCE OF BULK OXYGENHU SM.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 7; PP. 3666-3671; BIBL. 18 REF.Article

TRAPPING OF POSITRONS BY THERMALLY INDUCED VACANCIES IN TINSEGERS D; DORINKES VANPRAET L; DORIKENS M et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 2; PP. 543-546; ABS. GER; BIBL. 10 REF.Article

ETUDE DES SURFACES PROPRES DE SILICIUM PAR LA METHODE DE DIFFRACTION D'ELECTRONS LENTSOL'SHANETSKIJ BZ; MASHANOV VI.1980; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1980; VOL. 22; NO 10; PP. 2923-2927; BIBL. 14 REF.Article

DIE ORGANISCHEN VERBINDUNGEN UND KOMPLEXE VON GERMANIUM, ZINN UND BLEI = COMPOSES ORGANIQUES ET COMPLEXES DU GERMANIUM, DE L'ETAIN ET DU PLOMBNEUMANN WP.1981; NATURWISSENSCHAFTEN; ISSN 0028-1042; DEU; DA. 1981; VOL. 68; NO 7; PP. 354-359; ABS. ENG; BIBL. 35 REF.Article

DISTINGUISHING DISSOCIATED GLIDE AND SHUFFLE SET DISLOCATIONS BY HIGH RESOLUTION ELECTRON MICROSCOPYOLSEN A; SPENCE JCH.1981; PHILOS. MAG., A; ISSN 0141-8610; GBR; DA. 1981; VOL. 43; NO 4; PP. 945-965; BIBL. 30 REF.Article

EFFECT OF NEUTRON IRRADIATION ON THE DIMENSIONAL STABILITY OF GRAPHITE PRE-TREATED AT DIFFERENT TEMPERATURESPLATONOV PA; NOVOBRATSKAYA IF; TUMANOV YP et al.1981; RADIAT. EFF.; ISSN 0033-7579; GBR; DA. 1981; VOL. 54; NO 1; PP. 91-98; BIBL. 8 REF.Article

HETEROGENEOUS KINETICS AND MASS TRANSPORT IN CHEMICAL VAPOUR DEPOSITION PROCESSES. II: APPLICATION TO SILICON EPITAXYHITCHMAN ML; CURTIS BJ.1981; PROG. CRYST. GROWTH CHARACT.; ISSN 501948; GBR; DA. 1981; VOL. 4; NO 3; PP. 283-296; BIBL. 17 REF.Article

NEUTRON ACTIVATION STUDY OF A GETTERING TREATMENT FOR CZOCHRALSKI SILICON SUBSTRATESKATZ LE; SCHMIDT PF; PEARCE CW et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 3; PP. 620-624; BIBL. 9 REF.Article

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