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kw.\*:("GROWTH DEFECT")

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ON THE NATURE OF SWIRL DEFECTS IN FLOAT ZONE SI CRYSTALS.PETROFF PM; DE KOCK AJR.1976; J. CRYST. GROWTH.; NETHERL.; DA. 1976; VOL. 35; NO 3; PP. 345-346; BIBL. 9 REF.Article

A COMMENT ON THE "CHARACTERIZATION OF SWIRL DEFECTS IN FLOATING ZONE SI CRYSTALS" BY P.M. PETROFF AND A.J.R. DE KOCK.MATTHEWS JW; VAN VECHTEN JA; PETROFF PM et al.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 35; NO 3; PP. 343-346; BIBL. 31 REF.Article

CINETIQUE DE CROISSANCE DES GRAINS ET DE CICATRISATION DES DEFAUTS VOLUMIQUESPERVUSHIN YU V; BOGATYREV VA.1983; ZURNAL FIZICESKOJ HIMII; ISSN 0044-4537; SUN; DA. 1983; VOL. 57; NO 1; PP. 65-67; BIBL. 11 REF.Article

PARACRYSTALS AND GROWTH-DISORDER MODELSWELBERRY TR; MILLER GH; CARROLL CE et al.1980; ACTA CRYSTALLOGR., SECT. A, CRYST. PHYS., DIFFR., THEOR. GEN. CRYSTALLOGR.; ISSN 0567-7394; DNK; DA. 1980; VOL. 36; NO 6; PP. 921-929; BIBL. 18 REF.Article

HALF-WIDTH AND PEAK-INTENSITY MEASUREMENT OF A ROCKING CURVE OBTAINED FROM SILICON ON SAPPHIRE USING SOFT X-RAY BEAMS.KISHINO S; IIDA S; AOKI S et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 7; PP. 3138-3140; BIBL. 17 REF.Article

PHOTOCONDUCTIBILITE ET RESONANCE PARAMAGNETIQUE ELECTRONIQUE DES DEFAUTS DANS LES MEMBRANES EPITAXIALES DU DIAMANTSAMSONENKO ND; BUJPOV LL; KARPUKHINA TA et al.1977; SINTET. ALMAZY, U.S.S.R.; S.S.S.R.; DA. 1977; NO 2; PP. 6-8; BIBL. 11 REF.Article

A MECHANISM FOR LIQUID-PHASE EPITAXIAL GROWTH OF NONEQUILIBRIUM COMPOSITIONS PRODUCING A COHERENT INTERFACE.HIRTH JP; STRING FELLOW GB.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 5; PP. 1813-1814; BIBL. 14 REF.Article

MORPHOLOGY OF COPPER PRECIPITATES CHARACTERIZING LATTICE IMPERFECTION IN EFG RIBBON SILICONSHIMOKAWA R.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 2; PP. 97-108; BIBL. 30 REF.Article

EFFECT OF FLUID FLOW ON THE FORMATION OF GAS BUBBLES IN OXIDE CRYSTALS GROWN BY THE CZOCHRALSKI METHODKOBAYASHI N.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 54; NO 3; PP. 414-416; BIBL. 11 REF.Article

INFLUENCE DE L'ATMOSPHERE DE CROISSANCE SUR LA FORMATION DES MICRODEFAUTS DE STRUCTURE D'UN GERMANIUM CONTENANT DES DISLOCATIONSKORCHAZHKINA RL; VORONKOVA GI; GNILOV SV et al.1978; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; SUN; DA. 1978; VOL. 14; NO 10; PP. 1916-1917; BIBL. 7 REF.Article

DEFAUTS DANS LES CRISTAUX DE SRTIO3 FORMES PAR LA METHODE DE VERNEUILALEKSANDROVA MV; DUBROVINA EH P; MOKIEVSKIJ VA et al.1976; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1976; VOL. 12; NO 7; PP. 1266-1267; H.T. 1; BIBL. 4 REF.Article

EPITAXIE DE CU2SE SUR MICAKOGUT AN; MIKOLAJCHUK AG.1976; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1976; VOL. 21; NO 4; PP. 861-862; BIBL. 4 REF.Article

STRUCTURE MOSAIQUE DES MONOCRISTAUX D'HALOGENURES ALCALINS OBTENUS PAR LA METHODE DE KYROPOULOSPODLESNAYA AD; RAJKHEL'S EI; SMUSHKOV IV et al.1976; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1976; VOL. 21; NO 3; PP. 579-582; BIBL. 6 REF.Article

OBSERVATION OF DEFECTS IN MERCURY CADMIUM TELLURIDE CRYSTALS GROWN BY CHEMICAL VAPOR TRANSPORTIRENE EA; TIERNEY E; WIEDEMEIER H et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 710-712; BIBL. 8 REF.Article

CRYSTAL GROWTH OF KTA1-XNBXO3 (0<X <OU= 0.04) SOLID SOLUTIONS BY A SLOW-COOLING METHODRYTZ D; SCHEEL HJ.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 59; NO 3; PP. 468-484; BIBL. 60 REF.Article

EFFECT OF IMPURITY ATOM SIZE ON GROWN-IN DISLOCATION DENSITY OF CRYSTALS OF III-V COMPOUNDSSUCHOW L.1982; MATERIALS RESEARCH BULLETIN; ISSN 0025-5408; USA; DA. 1982; VOL. 17; NO 11; PP. 1401-1406; BIBL. 11 REF.Article

THE NATURE AND FORMATION MECHANISM OF ANOMALOUS DEFECTS IN DISLOCATION FREE FZ-SILICON CRYSTALS CAUSED BY HYDROGEN DOPINGWOLF E.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 70; NO 1; PP. K59-K61; BIBL. 16 REF.Article

QUANTITATIVE ANALYSIS OF MICROSEGREGATION IN THE FACETED AND NON-FACETED CZOCHRALSKI SILICON CRYSTAL GROWTHKIM KM.1980; Z. NATURFORSCH., A; ISSN 0340-4811; DEU; DA. 1980; VOL. 35; NO 1; PP. 80-84; BIBL. 9 REF.Article

ROLE OF A POLYSILICON LAYER IN THE REDUCTION OF LATTICE DEFECTS ASSOCIATED WITH PHOSPHORUS PREDEPOSITION IN SILICONARMIGLIATO A; SERUIDORI M; SOLMI S et al.1980; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1980; VOL. 15; NO 5; PP. 1124-1130; BIBL. 17 REF.Article

ETUDE PAR DIFFRACTION DE RAYONS X DU PROCESSUS DE CROISSANCE DES CRISTAUX DE ADPCHERNOV AA; SMOL'SKIJ IL; PARVOV VF et al.1980; KRISTALLOGRAFIJA; ISSN 0023-4761; SUN; DA. 1980; VOL. 25; NO 4; PP. 821-828; H.T. 2; BIBL. 26 REF.Article

MICRODEFECTS IN SMALL-DIAMETER SILICON CRYSTALS GROWN BY THE PEDESTAL TECHNIQUEKIM KM.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 1135-1138; BIBL. 12 REF.Article

DISLOCATIONS DE CROISSANCE DANS LES CRISTAUX SYNTHETIQUES DE CALCITELITVIN LT; DRONOV VV; KHADZHI VE et al.1977; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1977; VOL. 22; NO 1; PP. 213-216; BIBL. 8 REF.Article

LES DEFAUTS DE STRUCTURE DANS GE FORTEMENT DOPE PAR LE BARYUMVOROWKOVA GI; VORONIN NI; GONCHAROV LA et al.1977; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1977; VOL. 13; NO 2; PP. 200-203; BIBL. 10 REF.Article

MECANISME DE LA CROISSANCE DES MONOCRISTAUX DE SI AVEC ET SANS DISLOCATIONSKAMARALI VV; MURAVITSKIJ SA; BUZUNOV AI et al.1977; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1977; VOL. 13; NO 1; PP. 10-14; BIBL. 14 REF.Article

X-RAY TOPOGRAPHIC INVESTIGATION OF GROWTH DEFECTS IN NATURAL CALCIUM FLUORIDE CRYSTALSDESAI CC.1981; CRYST. RES. TECHNOL.; DDR; DA. 1981; VOL. 16; NO 4; PP. 437-440; BIBL. 6 REF.Article

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