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Results 1 to 25 of 1550

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LE PROBLEME DE LA CINETIQUE DE CROISSANCE DE L'EPITAXIE ELECTRIQUE D'EQUILIBRE EN PHASE LIQUIDEGEVORKYAN VA; GOLUBEV LV; KHACHATRYAN AE et al.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 3; PP. 545-549; BIBL. 8 REF.Article

THE TECHNIQUE OF FLUID FLOW MASKING SELECTIVE PLATINGHAYNES R; RAMACHANDRAN K; FINEBERG DJ et al.1979; INSULAT. CIRCUITS; USA; DA. 1979; VOL. 25; NO 11; PP. 39-44Article

JACKSON FACTOR AND GROWTH KINETICS OF GARNET LPE FILMS OF SINGULAR ORIENTATIONHERGT R; PFEIFFER H.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 74; NO 1; PP. 97-105; ABS. GER; BIBL. 21 REF.Article

ANALYSE DU TRANSPORT DE MASSE DANS L'EPITAXIE ELECTRIQUE EN PHASE LIQUIDE DE L'ARSENIURE DE GALLIUMNIKISHIN SA.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 3; PP. 538-544; BIBL. 19 REF.Article

PHOTOLUMINESCENCE STUDY OF PERTURBED GROWTH OF INP ON QUATERNARY LAYERS IN INGAASP-INP DOUBLE HETEROSTRUCTURESRAO EVK; QUILLEC M; BENCHIMOL JL et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 2; PP. 228-231; BIBL. 18 REF.Article

A NEW SUBSTRATE HOLDER FOR LIQUID PHASE EPITAXYBARTELS G; PASSIG G.1978; J. CRYST. GROWTH; NLD; DA. 1978; VOL. 44; NO 3; PP. 363-364; BIBL. 6 REF.Article

GAP RED LIGHT EMITTING DIODES PRODUCED BY A ROTATING BOAT SYSTEM OF LIQUID PHASE EPITAXIAL GROWTH.NIINA T.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 8; PP. 1285-1289; BIBL. 9 REF.Article

THICKNESS OF GAP LIQUID PHASE EPITAXIAL LAYERS GROWN BY STEP-COOLING, EQUILIBRIUM-COOLING, AND RAMP-COOLING METHODSKAO YC; EKNOYAN O.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 1865-1867; BIBL. 10 REF.Article

EXISTENCE OF SOLUTIONS TO SPHERICAL MOVING BOUNDARY PROBLEMSVRENTAS JS; VRENTAS CM.1982; JOURNAL OF CHEMICAL PHYSICS; ISSN 0021-9606; USA; DA. 1982; VOL. 77; NO 10; PP. 5256-5257; BIBL. 3 REF.Article

KINETICS OF IMPURITY INCORPORATION DURING CRYSTAL GROWTHDIDRIKHSONS GT; PFEIFFER H.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 71; NO 1; PP. 169-178; ABS. GER; BIBL. 12 REF.Article

A MODEL FOR CRYSTALLIZATION OF MONOMOLECULAR LAYERS ON CONTRACTING SURFACESSHAHINPOOR M.1982; J. COLLOID INTERFACE SCI.; ISSN 0021-9797; USA; DA. 1982; VOL. 85; NO 1; PP. 227-234; BIBL. 37 REF.Article

HIGH-EFFICIENCY GAP GREEN LED'S WITH DOUBLE N-LPE LAYERSIWAMOTO M; TASHIRO M; BEPPU T et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 11; PP. 2157-2163; BIBL. 18 REF.Article

THICK PHOTORESIST PATTERNS FOR SELECTIVE ELECTROPLATING.MAES JJ; VAN NIE AG; HUT GBA et al.1978; MICROELECTRON. AND RELIABIL.; GBR; DA. 1978; VOL. 17; NO 2; PP. 325-332; BIBL. 6 REF.Article

ASPECT CRISTALLIN DANS L'EXPLICATION DE LA CROISSANCE ET DE LA MORPHOLOGIE DES CRISTAUXKOZLOVA OG; BELOV NV.1978; VEST. MOSKOV. UNIV.; SUN; DA. 1978; NO 4; PP. 85-91; BIBL. 16 REF.Article

FABRICATION AND ELECTRICAL PROPERTIES OF EPITAXIAL LAYERS OF GAAS DOPED WITH MANGANESE.GOUSKOV L; BILAC S; PIMENTEL J et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 8; PP. 653-656; BIBL. 10 REF.Article

RELATIONSHIP BETWEEN CONFORMATION AND PHYSICOCHEMICAL PROPERTIES OF POLYPEPTIDES. I. SYNTHESIS OF BROMO- AND CO-OLIGOPEPTIDES BY THE LIQUID-PHASE METHODABD EL RAHMAN S; ANZINGER H; MUTTER M et al.1980; BIOPOLYMERS; USA; DA. 1980; VOL. 19; NO 1; PP. 173-187; BIBL. 36 REF.Article

COEFFICIENT DE DISTRIBUTION D'UNE IMPURETE ENTRE UN LIQUIDE ET UN SOLIDE PRESENTANT DES DISTORSIONSMIKICHEV NN; PAKHOMOV LG.1981; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1981; VOL. 55; NO 12; PP. 3099-3102; BIBL. 5 REF.Article

COUCHES DE SULFURE DE CADMIUM DEPOSEES A PARTIR DE SOLUTION AQUEUSE FORMANT UN SYSTEME DE JONCTIONS N-NRUDYAK VM; ZHAROV SN.1980; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1980; VOL. 16; NO 6; PP. 968-971; BIBL. 13 REF.Article

LIQUID PHASE EPITAXIAL SILICON DIODES: N-EPITAXIAL LAYERS ON BORON-DOPED SUBSTRATESJAYANT BALIGA B.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 5; PP. 1168-1172; BIBL. 13 REF.Article

A WEIGHING METHOD OF SOURCE MATERIALS FOR LIQUID PHASE EPITAXYTAKAHEI K.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 49; NO 2; PP. 403-406; BIBL. 6 REF.Article

EPITAXIE LIQUIDE ELECTRIQUE. IIIGEVORKYAN VA; GOLUBEV LV; KARYAEV VN et al.1979; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1979; VOL. 49; NO 10; PP. 2206-2209; BIBL. 2 REF.Article

HETEROJUNCTION TRANSISTORS WITH ENHANCED GAIN.ROSS PW; HICKS HGB; FROOM J et al.1977; ELECTRON. ENGNG; G.B.; DA. 1977; VOL. 49; NO 589; PP. 35-38; BIBL. 12 REF.Article

CROISSANCE DES CRISTAUX DE CYCLOHEXANE A PARTIR DU CORPS FONDUOVSIENKO DE; FEDOROV OP; ALFINTSEV GA et al.1983; KRISTALLOGRAFIJA; ISSN 0023-4761; SUN; DA. 1983; VOL. 28; NO 3; PP. 621-623; BIBL. 7 REF.Article

CINETIQUE DE CROISSANCE DES CRISTAUX QUANTIQUESANDREEV AF; KNIZHNIK VG.1982; Z. EKSP. TEOR. FIZ.; ISSN 0044-4510; SUN; DA. 1982; VOL. 83; NO 1; PP. 416-430; ABS. ENG; BIBL. 23 REF.Article

DOPANT INCORPORATION DURING LIQUID PHASE EPITAXYMAZURUK K; BRYSKIEWICZ T.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 1; PART. 1; PP. 1347-1350; BIBL. 10 REF.Article

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