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IMPURITY STRIATIONS IN MELT-GROWN CRYSTALSALEKSANDROVSKII AL; POSMYKIEWICZ P.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 74; NO 1; PP. K23-K26; BIBL. 6 REF.Article

NOUVELLE METHODE DE PRODUCTION DE MONOCRISTAUXPETROV DA; TUMANOV AT.1976; VEST. AKAD. NAUK S.S.S.R.; S.S.S.R.; DA. 1976; NO 9; PP. 120-123Article

KINETIC THEORY OF CRYSTALLIZATIONVILKOSKII SS; NABEREZHNYKH VP.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 1; PP. 333-342; ABS. RUS; BIBL. 18 REF.Article

GROWTH OF DISLOCATION-FREE BULK SILICON CRYSTALSBAGAI RK; BORIE WN.1983; PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION; ISSN 0146-3535; GBR; DA. 1983; VOL. 6; NO 1; PP. 25-46; BIBL. 81 REF.Article

RECENT DEVELOPMENTS IN THE DESIGN AND CONSTRUCTION OF THE COLD CRUCIBLESMITH BA; DENTON B.1980; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1980; VOL. 15; NO 10; PP. 2515-2519; BIBL. 9 REF.Article

EFFECT OF SMALL COPPER ADDITIVES ON THE GROWTH OF GALLIUM CRYSTALS FROM A MELT.STOICHEV NV; OVSIENKO DE; ALFINTSEV GA et al.1976; KRISTALL U. TECH.; DTSCH.; DA. 1976; VOL. 11; NO 9; PP. 905-911; ABS. RUSSE; BIBL. 10 REF.Article

INFLUENCE DES PROPRIETES DE SURFACE D'UNE MASSE FONDUE SUR LES CARACTERISTIQUES DE LA VARIATION DE LA VITESSE DE SON FRONT DE CRISTALLISATION EN FONCTION DE LA SURFUSIONMEZHIDOV V KH; MEZHIDOV S KH.1983; ZURNAL FIZICESKOJ HIMII; ISSN 0044-4537; SUN; DA. 1983; VOL. 57; NO 2; PP. 396-400; BIBL. 16 REF.Article

CARACTERISTIQUES DE CRISTALLISATION DU TELLURURE DE BISMUTH A PARTIR DE LA PHASE FONDUE CONTENANT UN EXCES DE TELLUREGALETSKAYA AD; KUTASOV VA; SMORODINA TA et al.1982; IZVESTIJA AKADEMII NAUK SSSR. NEORGANICESKIE MATERIALY; ISSN 0002-337X; SUN; DA. 1982; VOL. 18; NO 11; PP. 1820-1823; BIBL. 7 REF.Article

MECANISME DE FORMATION D'UN AGREGAT CRISTALLIN DANS UN CAPILLAIRE AVEC UNE MASSE SURFONDUEMEZHIDOV V KH.1982; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1982; VOL. 56; NO 10; PP. 2585-2587; BIBL. 13 REF.Article

SOLUTION ANALYTIQUE DU PROBLEME BIDIMENSIONNEL DE STEFAN POUR LES CRISTAUX TIRES A PARTIR D'UN MATERIAU FONDULOKHARU EH KH; YUFEREV VS.1982; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 2; PP. 198-203; BIBL. 11 REF.Article

GERMINATION DANS LES MILIEUX CHIMIQUEMENT REACTIFSFEDOROV VB; KALASHNIKOV EG; SHORSHOROV M KH et al.1981; FIZ. HIM., OBRAB. MATER.; ISSN 0015-3214; SUN; DA. 1981; NO 1; PP. 65-68; BIBL. 3 REF.Article

KINETIC COEFFICIENT OF A TWO-PHASE TRANSITIONAL REGION BETWEEN AN A+B MELT AND A CRYSTALLINE BULK PHASE ABAIKOV YA; ZELENEV YU; HAUBENREISSER W et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 2; PP. K155-K158; BIBL. 3 REF.Article

NUCLEATION OF FREEZING BY CHARGED PARTICLES. I. THERMODYNAMICS.COLE MW; SLUCKIN TJ.1977; J. CHEM. PHYS.; U.S.A.; DA. 1977; VOL. 67; NO 2; PP. 746-750; BIBL. 20 REF.Article

CRISTALLISATION LORS DE LA PRESENCE DE SURFUSION DE LA MASSE FONDUE D'INTERFACEGEL'PERIN NI; NOSOV GA; PAROKONNYJ VD et al.1976; ZH. VSESOJUZ. KHIM. OBSHCHEST. D.I. MENDELEEVA; S.S.S.R.; DA. 1976; VOL. 21; NO 3; PP. 351-352; BIBL. 1 REF.Article

STAGE II INITIAL TRANSIENT IN OFF-EUTECTIC SOLIDIFICATIONRAMARAO BV; WILCOX WR; BRIGGS WL et al.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 59; NO 3; PP. 557-562; BIBL. 7 REF.Article

THE EFFECT OF GRAVITY ON FREELY GROWING CRYSTALSZETTERLUND EH; FREDRIKSSON H.1982; MATERIALS LETTERS; ISSN 511080; NLD; DA. 1982; VOL. 1; NO 3-4; PP. 127-129; BIBL. 2 REF.Article

THERMODYNAMICS AND NUCLEATION PHENOMENA: A SET OF EXPERIMENTAL OBSERVATIONSRASMUSSEN DH.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 56; NO 1; PP. 56-66; BIBL. 44 REF.Article

SOLUTION DU PROBLEME DE STEFAN EN PRESENCE D'UN REFROIDISSEMENT PAR RAYONNEMENT DU FRONT DE CRISTALLISATION DANS LES CRISTAUX TRANSPARENTS TIRES A PARTIR D'UN MATERIAU FONDUVASIL'EV MG; YUFEREV VS.1982; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 2; PP. 204-208; BIBL. 9 REF.Article

A NEW METHOD FOR GROWING CRYSTALS OF SIB2.8-4 TYPE SILICON BORIDE FROM A METALLIC MELTBOUCHACOURT M; THEVENOT F.1982; MATERIALS RESEARCH BULLETIN; ISSN 0025-5408; USA; DA. 1982; VOL. 17; NO 11; PP. 1353-1358; BIBL. 23 REF.Article

SILICON RIBBON GROWTH VIA THE RIBBON-TO-RIBBON (RTR) TECHNIQUE: PROCESS UPDATE AND MATERIAL CHARACTERIZATION.GURTLER RW; BAGHDALI A; ELLIS RJ et al.1978; J. ELECTRON. MATER.; U.S.A.; DA. 1978; VOL. 7; NO 3; PP. 441-477; BIBL. 1 P.Article

CRYSTAL GROWTH IN A REDUCED GRAVITY ENVIRONMENT.CARRUTHERS JR.1977; PROGR. ASTRONAUT. AERONAUT.; U.S.A.; DA. 1977; VOL. 52; PP. 33-40; BIBL. 9 REF.Article

HIGH PURITY SILVER BROMIDE CRYSTALS CONTAINING LESS THAN SEVERAL PARTS PER BILLION OF IODIDE.CHILDS CB.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 38; NO 2; PP. 262-264; BIBL. 10 REF.Article

EIN STOCHASTISCHES MODELL DER KRISTALLISATION AUS UNTERKUEHLTEN. FLUESSIGKEITEN. = MODELE STOCHASTIQUE DE CRISTALLISATION DE LIQUIDES EN SURFUSIONHORSAK I; PACAK P; SLAMA I et al.1977; COLLECT. CZECHOSL. CHEM. COMMUNIC.; CZECHOSL.; DA. 1977; VOL. 42; NO 4; PP. 1100-1107; BIBL. 4 REF.Article

THERMAL ANALYSIS OF SINGLE-CRYSTAL SILICON RIBBON GROWTH PROCESSES.BELL AE.1977; R.C.A. REV.; U.S.A.; DA. 1977; VOL. 38; NO 1; PP. 109-138; BIBL. 13 REF.Article

DISTRIBUTION D'UNE MICRO-IMPURETE AU COURS DE LA CRISTALLISATION DE LA MASSE FONDUE DES SYSTEMES A TROIS COMPOSANTSKIRGINTSEV AN; ISAENKO LI.1977; IZVEST. SIBIR. OTDEL. AKAD. NAUK S.S.S.R., KHIM. NAUK; S.S.S.R.; DA. 1977; NO 3; PP. 146-151; ABS. ANGL.; BIBL. 8 REF.Article

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