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kw.\*:("GROWTH FROM VAPOR")

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CRYSTALLIZATION OF SUBLIMABLE SUBSTANCES FROM THE BULK VAPOUR PHASE COOLED BY EVAPORATING SPRAY OF LIQUID.VITOVEC J; SMOLIK J; KUGLER J et al.1977; COLLECT. CZECHOSL. CHEM. COMMUNIC.; CZECHOSL.; DA. 1977; VOL. 42; NO 4; PP. 1108-1117; BIBL. 6 REF.Article

CRISTALLISATION DU DIAMANT EN PHASE GAZEUSE EN CAS DE SURSATURATION ELEVEEFEDOSEEV DV; DERYAGIN BV; VARNIN VP et al.1979; DOKL. AKAD. NAUK S.S.S.R.; ISSN 0002-3264; SUN; DA. 1979; VOL. 247; NO 5; PP. 1201-1204; BIBL. 15 REF.Article

EVAPORATION AND SPUTTERING1980; CIRCUITS MANUF.; USA; DA. 1980; VOL. 20; NO 1; PP. 111-120; 7 P.Article

A NEW TECHNIQUE FOR DEVICE COMPATIBLE ANODIC OXIDATION OF GAAS.TOKUDA H; YOKOMIZO H; ADACHI Y et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 6; PP. 163-165; BIBL. 7 REF.Article

APPLICATION OF LINE-EDGE PROFILE SIMULATION TO THIN-FILM DEPOSITION PROCESSESNEUREUTHER AR; TING CH; CHEN YIH LIU et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1449-1455; BIBL. 6 REF.Article

NONLINEAR CRYSTAL GROWTH NEAR THE ROUGHENING-TRANSITIONNEUDECKER B.1982; ZEITSCHRIFT FUER PHYSIK B. CONDENSED MATTER; ISSN 0722-3277; DEU; DA. 1982; VOL. 49; NO 1; PP. 57-62; BIBL. 15 REF.Article

KONZEPTION EINER MODERNEN HOCHVAKUUM-BEDAMPFUNGSEINRICHTUNG FUER DIE MIKROELEKTRONIK-INDUSTRIE = CONCEPTION D'UNE INSTALLATION MODERNE D'EVAPORATION SOUS VIDE POUSSE POUR L'INDUSTRIE EN MICROELECTRONIQUESOLGER N; STANDFEST J; FLEISCHER W et al.1979; TECHNIK; DDR; DA. 1979; VOL. 34; NO 4; PP. 233-237Article

ROOM-TEMPERATURE 4.6-MU M LIGHT EMITTING DIODESLO W; SWETS DE.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 6; PP. 450-451; BIBL. 6 REF.Article

GROWTH OF NH4CL SINGLE CRYSTAL FROM VAPOR PHASE IN VERTICAL FURNACENIGARA Y; YOSHIZAWA M; FUJIMURA T et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 2; PART. 1; PP. 240-244; BIBL. 13 REF.Article

LASER INDUCED DEPOSITION OF ZINC OXIDESOLANKI R; COLLINS GJ.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 662-663; BIBL. 18 REF.Article

CONDENSATION VOLUMIQUE AU COURS DES REACTIONS HETEROGENESSAMUJLOV EV; ROZHDESTVENSKIJ IB; KORTSENSHTEJN NM et al.1981; FIZ. HIM., OBRAB. MATER.; ISSN 0015-3214; SUN; DA. 1981; NO 2; PP. 67-72; BIBL. 8 REF.Article

FABRICATION OF OPTICAL WAVEGUIDES BY THE OUTSIDE VAPOR DEPOSITION PROCESSSCHULTZ PC.1980; PROC. IEEE; ISSN 0018-9219; USA; DA. 1980; VOL. 68; NO 10; PP. 1187-1190; BIBL. 18 REF.Article

CROISSANCE DES CRISTAUX A PARTIR DE LA VAPEUR, DANS UN CHAMP ELECTRIQUELYCHEV AP; KOZLOVSKIJ MI.1980; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1980; VOL. 54; NO 1; PP. 140-144; BIBL. 17 REF.Article

RUECKSEITESNAETZUNG UND RUECKSEITENEPITAXIE BEI LEISTUNGSTRANSISTOREN = GRAVURE ET EPITAXIE DE LA FACE ARRIERE DANS LE CAS DE TRANSISTORS DE PUISSANCEEGELHAAF P; VITS W.1979; BOSCH TECH. BER.; DEU; DA. 1979; VOL. 6; NO 4; PP. 187-194; ABS. ENG/FRE; BIBL. 11 REF.Article

THE GROWTH OF ININTENTIONALLY DOPED LAYERS OF GAAS USING MOLECULAR BEAM EPITAXYCOVINGTON DW; MEEKS EL.1978; SOUTHEASTCON'78. INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS. REGION 3. CONFERENCE/1978-04-10/ATLANTA GA; USA; NEW YORK: IEEE; DA. 1978; 380-383; BIBL. 12 REF.Conference Paper

HERSTELLUNG UND EIGENSCHAFTEN ROTORANGELEUCHTENDER GA(AS,P)-MISCHKRISTALL-LUMINESZENZDIODEN NACH DEM GASPHASEN-EPITAXIEVERFAHREN = FABRICATION ET PROPRIETES DES DIODES LUMINESCENTES ROUGE-ORANGE A CRISTAUX MIXTES GA(AS,P) OBTENUES PAR EPITAXIE EN PHASE GAZEUSESCHWARZMICHEL K; GRASSL F; GREIL A et al.1980; SIEMENS FORSCH.- U. ENTWICKL.-BER.; DEU; DA. 1980; VOL. 9; NO 3; PP. 158-162; BIBL. 10 REF.Article

CRISTALLISATION HOMOGENE DU DIAMANT A PARTIR DE LA PHASE GAZEUSEFEDOSEEV DV; LAVRENT'EV AV; DERYAGIN BV et al.1980; KOLLOID. ZH.; SUN; DA. 1980; VOL. 42; NO 4; PP. 711-714; ABS. ENG; BIBL. 14 REF.Article

ETUDE DE LA CRISTALLISATION SIMULTANEE DU DIAMANT ET DU GRAPHITE EN PHASE GAZEUSEVNUKOV SP; ANIKIN BA; FEDOSEEV DV et al.1980; IZV. AKAD. NAUK SSSR, SER. HIM.; ISSN 0002-3353; SUN; DA. 1980; NO 5; PP. 983-987; BIBL. 16 REF.Article

AN APPROACH TO THE TOPOLOGICAL MODELLING OF CRYSTAL GROWTHBONCHEV D; MEKENYAN O; FRITSCHE H et al.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 49; NO 1; PP. 90-96; BIBL. 33 REF.Article

ELECTRICAL PROPERTIES OF RF SPUTTERING SYSTEMSKELLER JH; PENNEBAKER WB.1979; I.B.M.J. RES. DEVELOP.; USA; DA. 1979; VOL. 23; NO 1; PP. 3-15; BIBL. 18 REF.Article

SPUTTERING PROCESS MODEL OF DEPOSITION RATEKELLER JH; SIMMONS RG.1979; I.B.M.J. RES. DEVELOP.; USA; DA. 1979; VOL. 23; NO 1; PP. 24-32; BIBL. 20 REF.Article

DESCRIPTION DES PROCESSUS GAZODYNAMIQUES ET THERMIQUES DANS LES REACTEURS EN APPLICATION A LA CROISSANCE EPITAXIQUE DE COUCHES MONOCRISTALLINES A PARTIR D'UNE PHASE GAZEUSECHEREPANOVA TA; CHEREPANOV V YU.1979; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; SUN; DA. 1979; NO 6; PP. 76-88; ABS. ENG; BIBL. 2 REF.Article

MORPHOLOGICAL-STABILITY ANALYSIS OF GROWTH FROM THE VAPOUR.VAN DEN BREKEL CHJ.1978; PHILIPS RES. REP.; NETHERL.; DA. 1978; VOL. 33; NO 1/2; PP. 20-30; BIBL. 11 REF.Article

STRUCTURE NON CRISTALLINE DES AGREGATS PRODUITS EN NUCLEATION HOMOGENE DANS UN JET LIBRE.FARGES J.1978; VIDE; FR.; DA. 1978; NO 190; PP. 22-28; ABS. ANGL.; BIBL. 11 REF.Article

PARTICULARITES DE LA CROISSANCE DE COUCHES POLYCRISTALLINES DE DIAMANT A PARTIR DE LA PHASE GAZEUSEVARNIN VP; DERYAGIN BV; FEDOSEEV DV et al.1977; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1977; VOL. 22; NO 4; PP. 893-896; H.T. 1; BIBL. 9 REF.Article

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