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Steady-state electron transport in short GaAs n+-n-n+ structuresGRUZINSKIS, V; REKLAITIS, A.Semiconductor science and technology. 1988, Vol 3, Num 8, pp 754-757, issn 0268-1242Article

Current oscillations in semiconductor diodes under streaming instability conditionsGRUZINSKIS, V; REKLAITIS, A.Electronics Letters. 1983, Vol 19, Num 18, pp 733-734, issn 0013-5194Article

An efficient Monte Carlo particle technique for two-diomensional transistor modellingGRUZINSKIS, V; KERSULIS, S; REKLAITIS, A et al.Semiconductor science and technology. 1991, Vol 6, Num 7, pp 602-606, issn 0268-1242Article

Conservation equations for hot carriers. I: Transport modelsGRUZINSKIS, V; STARIKOV, E; SHIKTOROV, P et al.Solid-state electronics. 1993, Vol 36, Num 7, pp 1055-1066, issn 0038-1101Article

Terahertz generation due to streaming plasma instability in n+-n--n-n+ InN submicron structureSTARIKOV, E; GRUZINSKIS, V; SHIKTOROV, P et al.Physica status solidi. A. Applied research. 2002, Vol 190, Num 1, pp 287-293, issn 0031-8965Conference Paper

Conservation equations for hot carriers. II: Dynamic featuresGRUZINSKIS, V; STARIKOV, E; SHIKTOROV, P et al.Solid-state electronics. 1993, Vol 36, Num 7, pp 1067-1075, issn 0038-1101Article

Collective electron interaction in double-barrier GaAs structuresGRUZINSKIS, V; MICKEVICIUS, R; POZELA, J et al.Europhysics letters (Print). 1988, Vol 5, Num 4, pp 339-341, issn 0295-5075Article

High-frequency current oscillations in submicron bipolar structuresBANNOV, N; GRUZINSKIS, V; REKLAITIS, A et al.Solid-state electronics. 1986, Vol 29, Num 12, pp 1207-1211, issn 0038-1101Article

A fundamental time scale of collision durationREGGIANI, L; STARIKOV, E; SHIKTOROV, P et al.Solid state communications. 1999, Vol 112, Num 2, pp 119-122, issn 0038-1098Article

Hot-carrier thermal conductivity from the simulation of submicron semiconductor structuresGOLINELLI, P; BRUNETTI, R; MARTIN, M. J et al.Semiconductor science and technology. 1997, Vol 12, Num 11, pp 1511-1513, issn 0268-1242Article

Modelling of small-signal response and electronic noise in semiconductor high-field transportREGGIANI, L; STARIKOV, E; SHIKTOROV, P et al.Semiconductor science and technology. 1997, Vol 12, Num 2, pp 141-156, issn 0268-1242Article

Analytical model of high-frequency noise spectrum in Schottky-Barrier diodesSHIKTOROV, P; STARIKOV, E; GRUZINSKIS, V et al.IEEE electron device letters. 2005, Vol 26, Num 1, pp 2-4, issn 0741-3106, 3 p.Article

Monte Carlo calculations of THz generation in nitridesVARANI, L; VAISSIERE, J. C; STARIKOV, E et al.Physica status solidi. A. Applied research. 2002, Vol 190, Num 1, pp 247-256, issn 0031-8965Conference Paper

Comparative study of 200-300 GHz microwave power generation in GaN TEDs by the Monte Carlo techniqueGRUZINSKIS, V; SHIKTOROV, P; STARIKOV, E et al.Semiconductor science and technology. 2001, Vol 16, Num 9, pp 798-805, issn 0268-1242Article

A novel GaAs structure for terahertz generators driven by plasma instabilitySHIKTOROV, P; GRUZINSKIS, V; STARIKOV, E et al.Semiconductor science and technology. 1997, Vol 12, Num 10, pp 1331-1334, issn 0268-1242Article

Electron transport properties of bulk mercury-cadmium-telluride at 77 KPALERMO, C; VARANI, L; VAISSIERE, J. C et al.Solid-state electronics. 2009, Vol 53, Num 1, pp 70-78, issn 0038-1101, 9 p.Article

Theoretical design and analysis of SiC n+-pn-n+nn++-diodes for 400 GHz microwave power generationGRUZINSKIS, V; STARIKOV, E; SHIKTOROV, P et al.Materials science forum. 2002, pp 217-220, issn 0255-5476, isbn 0-87849-890-7Conference Paper

Monte Carlo simulation of terahertz generation in nitridesSTARIKOV, E; SHIKTOROV, P; GRUZINSKIS, V et al.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 32, pp 7159-7168, issn 0953-8984Article

Monte Carlo analysis of electronic noise in semiconductor materials and devicesREGGIANI, L; GOLINELLI, P; VARANI, L et al.Microelectronics journal. 1997, Vol 28, Num 2, pp 183-198, issn 0959-8324Article

Low-field mobility spectrum in nonparabolic compound semiconductorsSTARIKOV, E; SHIKTOROV, P; GRUZINSKIS, V et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 46, pp 8267-8273, issn 0953-8984, 7 p.Article

A macroscopic quantum Langevin equationSHIKTOROV, P; STARIKOV, E; GRUZINSKIS, V et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S232-S234, issn 0268-1242Conference Paper

Monte Carlo analysis of the efficiency of tera-hertz harmonic generation in semiconductor nitridesSHIKTOROV, P; STARIKOV, E; GRUZINSKIS, V et al.Physica status solidi. A. Applied research. 2002, Vol 190, Num 1, pp 271-279, issn 0031-8965Conference Paper

Monte Carlo simulation of 4H-SiC IMPATT diodesZHAO, J. H; GRUZINSKIS, V; LUO, Y et al.Semiconductor science and technology. 2000, Vol 15, Num 11, pp 1093-1100, issn 0268-1242Article

Electronic noise and impedance field of submicron n+nn+ InP diode generatorsGRUZINSKIS, V; STARIKOV, E; SHIKTOROV, P et al.Semiconductor science and technology. 1994, Vol 9, Num 10, pp 1843-1848, issn 0268-1242Article

Monte Carlo calculations of hot-electron transport and diffusion noise in GaN and InNSTARIKOV, E; SHIKTOROV, P; GRUZINSKIS, V et al.Semiconductor science and technology. 2005, Vol 20, Num 3, pp 279-285, issn 0268-1242, 7 p.Article

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