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DIRECTIONS IN CCD DIGITAL MEMORY.GUIDRY MR.1976; IN: COMPCON '76 FALL. COMPUT... BY MILLIONS FOR MILLIONS. IEEE COMPUT. SOC. INT. CONF. 13. DIG. PAPERS; WASHINGTON, D.C.; 1976; LONG BEACH, CALIF.; IEEE COMPUTER SOC.; DA. 1976; PP. 326-328; BIBL. 2 REF.Conference Paper

AN INTEGRATED TEST CONCEPT FOR SWITCHED-CAPACITOR DYNAMIC MOS RAM'S.LO TC; GUIDRY MR.1977; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 6; PP. 693-703; BIBL. 11 REF.Article

A CCD LINE ADDRESSABLE RANDOM-ACCESS MEMORY (LARAM).GUNSAGAR KC; GUIDRY MR; AMELIO GF et al.1975; I.E.E.E. J. SOLID. STATE CIRCUITS; U.S.A.; DA. 1975; VOL. 10; NO 5; PP. 268-273; BIBL. 8 REF.Article

A BYTE ORGANIZED NMOS/CCD MEMORY WITH DYNAMIC REFRESH LOGIC.VARSHNEY RC; GUIDRY MR; AMELIO GF et al.1976; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 2; PP. 86-92; BIBL. 9 REF.Article

A 100 NS 5 V ONLY 64 K X 1 MOS DYNAMIC RAMCHAN JY; BARNES JJ; WANG CY et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 5; PP. 839-846; BIBL. 11 REF.Article

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