A new extrinsic dc model for high speed lattice matched InAlAs/InGaAs/InP HEMT with a predicted 135 GHz cut-off frequencyJOGI, Jyotika; GUPTA, Mridula; GUPTA, R. S et al.Microelectronics journal. 2001, Vol 32, Num 12, pp 925-930, issn 0959-8324Article

Impact of Temperature and Indium Composition in the Channel on the Microwave Performance of Single-Gate and Double-Gate InAlAs/InGaAs HEMT : NanoCon 2012BHATTACHARYA, Monika; JOGI, Jyotika; GUPTA, R. S et al.IEEE transactions on nanotechnology. 2013, Vol 12, Num 6, pp 965-970, issn 1536-125X, 6 p.Article

Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET: Analog performance and linearity analysisGAUTAM, Rajni; SAXENA, Manoj; GUPTA, R. S et al.Microelectronics and reliability. 2012, Vol 52, Num 6, pp 989-994, issn 0026-2714, 6 p.Article

Analytical non-linear charge control model for InAlAs/InGaAs/InAlAs double heterostructure high electron mobility transistor (DH-HEMT)GUPTA, Ritesh; SANDEEP KUMAR AGGARWAL; GUPTA, Mridula et al.Solid-state electronics. 2005, Vol 49, Num 2, pp 167-174, issn 0038-1101, 8 p.Article

Channel thermal noise of SOI MOSFET in high-frequency regionKAPOOR, Nirupama; HALDAR, Subhasis; GUPTA, Mridula et al.Semiconductor science and technology. 2005, Vol 20, Num 2, pp 216-220, issn 0268-1242, 5 p.Article

Two-dimensional analytical modeling and simulation of retrograde doped HMG mosfetGUPTA, R. S; GOEL, Kirti; GUPTA, Mridula et al.IEEE Lester Eastman conference on high performance devices. 2004, pp 52-59, isbn 981-256-196-X, 1Vol, 8 p.Conference Paper

Temperature dependent subthreshold model of long channel GAA MOSFET including localized charges to study variations in its temperature sensitivityGAUTAM, Rajni; SAXENA, Manoj; GUPTA, R. S et al.Microelectronics and reliability. 2014, Vol 54, Num 1, pp 37-43, issn 0026-2714, 7 p.Article

Numerical Model of Gate-All-Around MOSFET With Vacuum Gate Dielectric for Biomolecule DetectionGAUTAM, Rajni; SAXENA, Manoj; GUPTA, R. S et al.IEEE electron device letters. 2012, Vol 33, Num 12, pp 1756-1758, issn 0741-3106, 3 p.Article

Simulation study of Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for high temperature applicationsKUMARI, Vandana; SAXENA, Manoj; GUPTA, R. S et al.Microelectronics and reliability. 2012, Vol 52, Num 8, pp 1610-1612, issn 0026-2714, 3 p.Conference Paper

An analytical charge-based drain current model for nano-scale In_0.52Al_0.48As-In_0.53Ga_0.47 as a separated double-gate HEMTRATHI, Servin; JOGI, Jyotika; GUPTA, Mridula et al.Semiconductor science and technology. 2010, Vol 25, Num 11, issn 0268-1242, 115003.1-115003.9Article

An analytical model for discretized doped InAlAs/InGaAs heterojunction HEMT for higher cut-off frequency and reliabilityGUPTA, Ritesh; AGGARWAL, Sandeep K; GUPTA, Mridula et al.Microelectronics journal. 2006, Vol 37, Num 9, pp 919-929, issn 0959-8324, 11 p.Article

Numerical modelling and simulation of non-uniformly doped channel 6H-silicon carbide MOSFETKAUSHIK, Navneet; HALDAR, Subhasis; GUPTA, Mridula et al.Semiconductor science and technology. 2004, Vol 19, Num 3, pp 373-379, issn 0268-1242, 7 p.Article

Gate All Around MOSFET With Vacuum Gate Dielectric for Improved Hot Carrier Reliability and RF PerformanceGAUTAM, Rajni; SAXENA, Manoj; RADHEY SHYAM GUPTA et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 6, pp 1820-1827, issn 0018-9383, 8 p.Article

Impact of Temperature Variations on the Device and Circuit Performance of Tunnel FET: A Simulation Study : NanoCon 2012NARANG, Rakhi; SAXENA, Manoj; GUPTA, R. S et al.IEEE transactions on nanotechnology. 2013, Vol 12, Num 6, pp 951-957, issn 1536-125X, 7 p.Article

AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applicationsMALIK, Priyanka; GUPTA, R. S; CHAUJAR, Rishu et al.Microelectronics and reliability. 2012, Vol 52, Num 1, pp 151-158, issn 0026-2714, 8 p.Article

An Accurate Charge-Control-Based Approach for Noise Performance Assessment of a Symmetric Tied-Gate InAlAs/InGaAs DG-HEMTBHATTACHARYA, Monika; JOGI, Jyotika; GUPTA, R. S et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 6, pp 1644-1652, issn 0018-9383, 9 p.Article

Dual-Material Double-Layer Gate Stack SON MOSFET: A Novel Architecture for Enhanced Analog Performance-Part II: Impact of Gate-Dielectric Material EngineeringKASTURI, Poonam; SAXENA, Manoj; GUPTA, Mridula et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 1, pp 382-387, issn 0018-9383, 6 p.Article

Modeling aspects of Sub-100-nm MOSFETs for ULSI-device applicationsMANGLA, Tina; SEHGAL, Amit; GUPTA, Mridula et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 1, pp 68-77, issn 0018-9383, 10 p.Article

Modeling and simulation of a nanoscale three-region tri-material gate stack (TRIMGAS) MOSFET for improved carrier transport efficiency and reduced hot-electron effectsGOEL, Kirti; SAXENA, Manoj; GUPTA, Mridula et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 7, pp 1623-1633, issn 0018-9383, 11 p.Article

Modelling challenges in sub-100 nm gate stack MOSFETsMANGLA, Tina; SEHGAL, Amit; GUPTA, Mridula et al.Semiconductor science and technology. 2006, Vol 21, Num 12, pp 1609-1619, issn 0268-1242, 11 p.Article

Temperature dependence on electrical characteristics of short geometry poly-crystalline silicon thin film transistorSEHGAL, Amit; MANGLA, Tina; GUPTA, Mridula et al.Solid-state electronics. 2005, Vol 49, Num 3, pp 301-309, issn 0038-1101, 9 p.Article

High frequency noise in fully overlapped lightly doped drain MOSFETsKUMARA, Anil; HALDAR, Subhasis; GUPTA, Mridula et al.Microelectronic engineering. 2003, Vol 65, Num 3, pp 249-257, issn 0167-9317, 9 p.Article

Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature rangeKUMARI, Vandana; SAXENA, Manoj; GUPTA, R. S et al.Microelectronics and reliability. 2012, Vol 52, Num 6, pp 974-983, issn 0026-2714, 10 p.Article

Two-Dimensional Analytical Drain Current Model for Double-Gate MOSFET Incorporating Dielectric PocketKUMARI, Vandana; SAXENA, Manoj; GUPTA, R. S et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 10, pp 2567-2574, issn 0018-9383, 8 p.Article

An Investigation of Linearity Performance and Intermodulation Distortion of GME CGT MOSFET for RFIC DesignGHOSH, Pujarini; HALDAR, Subhasis; GUPTA, R. S et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 12, pp 3263-3268, issn 0018-9383, 6 p.Article