Pascal and Francis Bibliographic Databases

Help

Search results

Your search

au.\*:("GUTMANN RJ")

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 27

  • Page / 2
Export

Selection :

  • and

OUTPUT POWER VARIATIONS WITH SOLAR POWER SATELLITESGUTMANN RJ.1978; SOLAR ENERGY; USA; DA. 1978; VOL. 21; NO 4; PP. 323-330; ABS. SPA/FRE; BIBL. 12 REF.Article

SPECIAL ISSUE ON RELIABILITY OF PHOTOVOLTAIC DEVICES & SYSTEMSGUTMANN RJ.1982; IEEE TRANS. RELIAB.; ISSN 0018-9529; USA; DA. 1982; VOL. 31; NO 3; PP. 226-378; ABS. DISS.Article

APPLICATION OF RF CIRCUIT DESIGN PRINCIPLES TO DISTRIBUTED POWER CONVERTERSGUTMANN RJ.1980; IEEE TRANS. IND. ELECTRON. & CONTROL INSTRUM.; ISSN 0018-9421; USA; DA. 1980; VOL. 27; NO 3; PP. 156-164; BIBL. 8 REF.Article

DETERMINATION OF HARMONIC LEVELS IN NONLINEAR NETWORKS BY COMPUTER SIMULATIONGUTMANN RJ; CAMNITZ LH.1982; IEEE TRANS. ELECTROMAGN. COMPAT.; ISSN 0018-9375; USA; DA. 1982; VOL. 24; NO 1; PP. 50-52; BIBL. 11 REF.Article

DEGRADATION OF GAAS MESFETS IN RADIATION ENVIRONMENTSGUTMANN RJ; BORREGO JM.1980; I.E.E.E. TRANS. RELIABIL.; USA; DA. 1980; VOL. 29; NO 3; PP. 232-236; BIBL. 10 REF.Article

AN INHERENT TRADEOFF IN NONCOHERENT DETECTIONGUTMANN RJ; ROSE K.1978; PROC. I.E.E.E.; USA; DA. 1978; VOL. 66; NO 10; PP. 1291-1293; BIBL. 7 REF.Article

POWER COMBINING IN AN ARRAY OF MICROWAVE POWER RECTIFIERSGUTMANN RJ; BORREGO JM.1979; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 12; PP. 958-968; BIBL. 9 REF.Conference Paper

YAGI-UDA RECEIVING ELEMENTS IN MICROWAVE POWER TRANSMISSION SYSTEM RECTENNASGUTMANN RJ; GWOREK RB.1979; J. MICROWAVE POWER; CAN; DA. 1979; VOL. 14; NO 4; PP. 313-320; BIBL. 10 REF.Article

CHANGES IN AU-GAAS SCHOTTKY BARRIER DIODES WITH LOW NEUTRON FLUENCE.BORREGO JM; GUTMANN RJ.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 5; PP. 280-282; BIBL. 7 REF.Article

IMPACT OF CABLE TELEVISION ON EDUCATION.ROSE K; GUTMANN RJ.1975; I.E.E.E. TRANS. COMMUNIC.; U.S.A.; DA. 1975; VOL. 23; NO 10; PP. 1164-1171; BIBL. 34 REF.Article

INTERFACE STATE DENSITY IN AN-N-GA AS SCHOTTKY DIODES.BORREGO JM; GUTMANN RJ; ASHOK S et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 2; PP. 125-132; BIBL. 14 REF.Article

IMPATT OSCILLATES WITH ENHANCED LEAKAGE CURRENT.COTTRELL PE; BORREGO JM; GUTMANN RJ et al.1975; SOLID. STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 1; PP. 1-12; H.T. 1; BIBL. 19 REF.Article

THE EFFECT OF HOLE VERSUS ELECTRON PHOTOCURRENT ON MICROWAVE-OPTICAL INTERACTIONS IN IMPATT OSCILLATORSVYAS HP; GUTMANN RJ; BORREGO JM et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 3; PP. 232-234; BIBL. 10 REF.Article

HIGH E-FIELD MICROWAVE PROPERTIES OF BULK AMORPHOUS SEMICONDUCTORS.STAIGER EH; GUTMANN RJ; BORREGO JM et al.1975; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1975; VOL. 17; NO 2; PP. 273-280; BIBL. 12 REF.Article

PHOTOCURRENT EFFECTS ON NOISE IN SILICON IMPATT OSCILLATORSPITNER PM; GUTMANN RJ; BORREGO JM et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 4; PP. 149-152; BIBL. 12 REF.Article

CURRENT TRANSPORT IN GAAS SCHOTTKY BARRIER DIODES SUBJECT TO HIGH NEUTRON FLUENCEASHOK S; BORREGO JM; GUTMANN RJ et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 2; PP. 1076-1084; BIBL. 21 REF.Article

GAMMA IRRADIATION INSENSITIVITY OF GAAS SCHOTTKY DIODES.ASHOK S; BORREGO JM; GUTMANN RJ et al.1978; I.E.E.E. TRANS. NUCL. SCI.; U.S.A.; DA. 1978; VOL. 25; NO 2; PP. 999-1000; BIBL. 6 REF.Article

RICHARDSON CONSTANT OF AL- AND GAAS SCHOTTKY BARRIER DIODES.BORREGO JM; GUTMANN RJ; ASHOK S et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 3; PP. 169-172; BIBL. 10 REF.Article

ELECTRICAL CHARACTERISTICS OF GAAS MIS SCHOTTKY DIODESASHOK S; BORREGO JM; GUTMANN RJ et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 7; PP. 621-631; BIBL. 44 REF.Article

A NOTE ON THE EVALUATION OF SCHOTTKY DIODE PARAMETERS IN THE PRESENCE OF AN INTERFACIAL LAYER.ASHOK S; BORREGO JM; GUTMANN RJ et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 11; PP. 332-333; BIBL. 10 REF.Article

EFFECT OF CHROMIUM THICKNESS ON AUCR-NSI SCHOTTKY AND AUCR-N-P+SI BARITT DIODES. = EFFET DE L'EPAISSEUR DE CHROME SUR DES DIODES DE SCHOTTKY A AUCR-NSI ET BARITT A AUCR-N-P+SINARAIN J; BORREGO JM; GUTMANN RJ et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 8; PP. 178-179; BIBL. 4 REF.Article

EFFECT OF LEAKAGE CURRENT ON THE POWER OUTPUT OF S BAND TRAPATT OSCILLATORS. = EFFET DU COURANT DE FUITE SUR LA SORTIE EN PUISSANCE D'OSCILLATEURS TRAPATT EN BANDE SBORREGO JM; GUTMANN RJ; GEIPEL HJ et al.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 14; PP. 277-278; BIBL. 9 REF.Article

PHOTOEFFECTS IN COMMON-SOURCE AND COMMON-DRAIN MICROWAVE GAAS MESFET OSCILLATORSSUN HJ; GUTMANN RJ; BORREGO JM et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 935-940; BIBL. 7 REF.Article

DETERMINATION OF GAAS M.E.S.F.E.T. EQUIVALENT-CIRCUIT PARAMETERS FROM I/V AND 1 MHZ MEASUREMENTS.BORREGO JM; GUTMANN RJ; CHUDZICKI M et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 24; PP. 756-757; BIBL. 4 REF.Article

EFFECTS OF 2.6-4.0 GHZ MICROWAVE RADIATION ON E. COLI B.CORELLI JC; GUTMANN RJ; KOHAZI S et al.1977; J. MICROWAVE POWER; CANADA; DA. 1977; VOL. 12; NO 2; PP. 141-144; BIBL. 8 REF.Article

  • Page / 2