RF plasma investigations for plasma-assisted MBE growth of (Ga, In)(As, N) materialsCARRERE, H; ARNOULT, A; RICARD, A et al.Journal of crystal growth. 2002, Vol 243, Num 2, pp 295-301, issn 0022-0248Article

Valence-band-edge energy of group-III nitride alloy semiconductorsNAKAJIMA, S; TAO YANG; SAKAI, S et al.Japanese journal of applied physics. 1995, Vol 34, Num 5A, pp 2213-2215, issn 0021-4922, 1Article

Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxyKIM, Hwa-Mok; LEE, Hosang; SUK IL KIM et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 12, pp 2802-2805, issn 0370-1972, 4 p.Conference Paper

Properties of InGaN multiple-quantum-well heterostructures grown by metalorganic chemical vapor depositionGRUDOWSKI, P. A; EITING, C. J; DUPUIS, R. D et al.Journal of crystal growth. 1998, Vol 189-90, pp 103-108, issn 0022-0248Conference Paper

InGaN-channel field-effect transistors: A case of polar heterojunctionsKOHN, E; DAUMILLER, I; KUNZE, M et al.SPIE proceedings series. 2002, pp 771-778, isbn 0-8194-4500-2, 2VolConference Paper

Design and performance of asymmetric waveguide nitride laser diodesBOUR, D. P; KNEISSL, M; JOHNSON, N. M et al.IEEE journal of quantum electronics. 2000, Vol 36, Num 2, pp 184-191, issn 0018-9197Article

CW InGaN multiple-quantum-well laser diodes on copper substratesKNEISSL, M; WONG, W. S; TREAT, D. W et al.Physica status solidi. A. Applied research. 2001, Vol 188, Num 1, pp 23-29, issn 0031-8965Conference Paper

Estimation of device properties in AlGaInN-based laser diodes by time-resolved photoluminescenceHINO, T; ASANO, T; TOJYO, T et al.Physica status solidi. A. Applied research. 2001, Vol 188, Num 1, pp 101-104, issn 0031-8965Conference Paper

Localized luminescence centers of InGaNKANIE, H; TSUKAMOTO, N; KOAMI, H et al.Journal of crystal growth. 1998, Vol 189-90, pp 52-56, issn 0022-0248Conference Paper

GaN-based light-emitting diodes and laser diodes, and their recent progressNAGAHAMA, S; IWASA, N; CHOCHO, K et al.Physica status solidi. A. Applied research. 2001, Vol 188, Num 1, pp 1-7, issn 0031-8965Conference Paper

Surface segregation in group-III nitride MBEKARPOV, S. Yu; MAKAROV, Yu. N.Physica status solidi. A. Applied research. 2001, Vol 188, Num 2, pp 611-614, issn 0031-8965Conference Paper

Stripe geometry light emitting diodes over pulsed lateral epitaxial overgrown GaN for solid state white lightingSHATALOV, M; CHITNIS, A; BASAK, D et al.Physica status solidi. A. Applied research. 2001, Vol 188, Num 1, pp 147-150, issn 0031-8965Conference Paper

Probing the local dielectric/optical properties of group III-nitrides by spatially resolved EELS on the nanometer scaleBROCKT, G; LAKNER, H.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 59, Num 1-3, pp 155-158, issn 0921-5107Conference Paper

Numerical investigation on the enhanced carrier collection efficiency of Ga-face GaN/InGaN p-i-n solar cells with polarization compensation interlayersCHANG, Jih-Yuan; LIOU, Bo-Ting; LIN, Han-Wei et al.Optics letters. 2011, Vol 36, Num 17, pp 3500-3502, issn 0146-9592, 3 p.Article

Investigation of long wavelength green InGaN lasers on c-plane GaN up to 529 nm continuous wave operationMÜLLER, Jens; STRAUSS, Uwe; LERMER, Teresa et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 7, pp 1590-1592, issn 1862-6300, 3 p.Article

Role of electron blocking layer in III-nitride laser diodes and light- emitting diodesKUO, Yen-Kuang; CHANG, Jih-Yuan; CHEN, Mei-Ling et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7597, issn 0277-786X, isbn 978-0-8194-7993-8 0-8194-7993-4, 1Vol, 759720.1-759720.9Conference Paper

Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layersCHEN, J.-R; LING, S. C; HUANG, H. M et al.Applied physics. B, Lasers and optics (Print). 2009, Vol 95, Num 1, pp 145-153, issn 0946-2171, 9 p.Article

Plasmonic light-emission enhancement with isolated metal nanoparticles and their coupled arraysSUN, G; KHURGIN, J. B; SOREF, R. A et al.Journal of the Optical Society of America. B, Optical physics (Print). 2008, Vol 25, Num 10, pp 1748-1755, issn 0740-3224, 8 p.Article

Coherent and dislocated three-dimensional islands of In_xGa_1-xN self-assembled on GaN(0001) during molecular-beam epitaxyLIU, Y; CAO, Y. G; WU, H. S et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 15, pp 153405.1-153406.4, issn 1098-0121Article

Comparison between a graded and step-index optical cavity in InGaN MQW laser diodesMARTIN, Juan A; SANCHEZ, M.Semiconductor science and technology. 2005, Vol 20, Num 3, pp 290-295, issn 0268-1242, 6 p.Article

Microscopic description of the phase separation process in Al_xGa_yIn_1-x-yN quaternary alloysMARQUES, M; TELES, L. K; SCOLFARO, L. M. R et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 7, pp 073202.1-073202.4, issn 1098-0121Article

In-depth and in-plane profiling of light emission properties of InGaN-based laser diodeGODLEWSKI, M; GOLDYS, E. M; GRZEGORY, L et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 2, pp 207-211, issn 0031-8965, 5 p.Conference Paper

Growth and characterization of InGaN double heterostructures for optical devices at 1.5-1.7 μm communication wavelengthsOHASHI, Tatsuo; KOUNO, Tetsuya; KAWAI, Mizue et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 12, pp 2850-2854, issn 0031-8965, 5 p.Conference Paper

Towards understanding the emission efficiency of nitride quantum wellsHANGLEITER, A; FUHRMANN, D; GREWE, M et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 12, pp 2808-2813, issn 0031-8965, 6 p.Conference Paper

Wishful physics: some common misconceptions about InGaNO'DONNELL, K. P; PEREIRA, S; MARTIN, R. W et al.Physica status solidi. A. Applied research. 2003, Vol 195, Num 3, pp 532-536, issn 0031-8965, 5 p.Article