Etude des dégradations dans les diodes électroluminescentes n GaAlAs/p GaAlAs par spectroscopie de photoluminescence = Photoluminescence spectroscopic study of degradation effects in n-GaAlAs/p-GaAlAs LED'sAjroudi, Mohammed; Fortini, A.1992, 70 p.Thesis

Transistors à effet de champ à grille isolée sur hétérostructure GaAlAs/GaAs : étude, réalisation et application aux circuits intégrésAguila, Thierry; Graffeuil, Jacques.1989, 256 p.Thesis

Etude de la position des atomes d'oxygène dans le réseau de Ga_1-xAl_xAs préparé par épitaxie en phase vapeur à partir d'organométalliques = Study of the lattice location of oxygen atoms in Ga_1-xAl_xAs prepared by metalorganic vapour phase epitaxyHanna Bakraji, Elias; Debrun, Jean-Luc.1990, 108 p.Thesis

Localisation faible et interactions coulombiennes dans un gaz d'électrons 2D sous pression hydrostatique : application aux hétérojonctions GaAs/GaA1AsZekentes, Constadinos; Robert, J.-L.1989, 109 p.Thesis

Réalisation de transistors à effet de champ en AsGa par la neutralisation des donneurs légers par hydrogène atomiqueCaglio, Nathalie; Constant, Eugène.1989, 200 p.Thesis

Etude de la compatibilité entre les circuits récepteurs pin et les transistors à effet de champ. Extension aux transistors à haute mobilité et à confinement des porteurs du canal bi-dimensionnel = Study of the compatibility of pin detector circuits and field effect transistors. Extension to high mobility and one dimensional electron gas transistorsDa Silva, Michel; Therez, Francis.1992, 148 p.Thesis

OPTIMISATION et REALISATION de DETECTEURS INFRAROUGE A base de PUITS QUANTIQUES GaAs / AlGaAs = OPTIMIZATION and REALIZATION of INFRARED DETECTORS based on GaAlAs/GaAs QUANTUM WELLSCostard, Eric; Costaro, Eric; Meyzonnette, Jean Louis et al.2001, 148 p.Thesis

Polaritons in microcavities containing a two-dimensional electron gasQARRY, A; RAPAPORT, R; RAMON, G et al.Semiconductor science and technology. 2003, Vol 18, Num 10, pp S331-S338, issn 0268-1242Article

Measurements of linewidth variations within external-cavity modes of a grating-cavity laserGENTY, G; KAIVOLA, M; LUDVIGSEN, H et al.Optics communications. 2002, Vol 203, Num 3-6, pp 295-300, issn 0030-4018Article

The limiting capabilities of injection-laser-based recirculating optical range finders under actual temperature conditionsKOROSTIK, K. N.Journal of engineering physics and thermophysics. 2001, Vol 74, Num 2, pp 390-396, issn 1062-0125Article

GaAlAs-based micromachined accelerometerKONCZEWICZ, L; LEE, H. Y; SADOWSKI, M. L et al.Physica status solidi. B. Basic research. 2001, Vol 223, Num 2, pp 593-596, issn 0370-1972Article

Carrier-induced lensing in broad-area and tapered semiconductor amplifiersHALL, D. C; SURETTE, M. R; GOLDBERG, L et al.IEEE photonics technology letters. 1994, Vol 6, Num 2, pp 186-188, issn 1041-1135Article

CONCEPTION ET EVALUATION D'AMPLIFICATEURS OPTIQUES DE PUISSANCE FONCTIONNANT DANS LES GAMMES 860 nanomètres ET 1.5 micromètres = DESIGN AND EVALUATION OF HIGH POWER OPTICAL AMPLIFIERS EMITTING AT 860 nanometers AND 1.5 MICROMETERSVergnenegre, Corinne; Lozes Dupuy, Francoise.1999, 156 p.Thesis

INCLUSION-GENERATED DISLOCATION CLUSTERS IN LIQUID PHASE EPITAXY.WOOLHOUSE GR.1977; PHILOS. MAG.; G.B.; DA. 1977; VOL. 36; NO 3; PP. 597-607; BIBL. 22 REF.Article

Epitaxial CoGa and textured CoAs contacts on Ga_1-xAl_xAs fabricated by molecular-beam epitaxyPALMSTRØM, C. J; FIMLAND, B.-O; SANDS, T et al.Journal of applied physics. 1989, Vol 65, Num 12, pp 4753-4758, issn 0021-8979, 6 p.Article

Electron-hole plasma decay time in Gaas/(Ga,Al)As quantum wellsBONGIOVANNI, G; STAEHLI, J. L.Physica status solidi. B. Basic research. 1992, Vol 173, Num 1, pp 365-371, issn 0370-1972Conference Paper

Synthesis of single- and multi-mode planar optical waveguides by a direct numerical solution of the Gel'fand-Levitan-Marchenko integral equationPAPACHRISTOS, Ch; FRANGOS, P.Optics communications. 2002, Vol 203, Num 1-2, pp 27-37, issn 0030-4018Article

The low-frequency electrical noise as reliability estimation for high power semiconductor lasersHU GUIJUN; SHI JIAWEI; ZHANG SHUMEI et al.Optical and quantum electronics. 2002, Vol 34, Num 10, pp 987-992, issn 0306-8919, 6 p.Article

Linear and nonlinear optical absorption coefficients in GaAs/Ga_1―xAl_xAs concentric double quantum rings: Effects of hydrostatic pressure and aluminum concentrationBAGHRAMYAN, H. M; BARSEGHYAN, M. G; KIRAKOSYAN, A. A et al.Journal of luminescence. 2013, Vol 134, pp 594-599, issn 0022-2313, 6 p.Article

Phonon transmission in III-V semiconductor superlattices and alloysANTONYUK, Vadim B; LARSSON, Magnus; MAL'SHUKOV, A. G et al.Semiconductor science and technology. 2005, Vol 20, Num 5, pp 347-352, issn 0268-1242, 6 p.Article

Hot electron energy loss rates in GaAs/GaAlAs multiple quantum wells: effects of finite barrier height and well widthSURESHA, Kasala; KUBAKADDI, S. S; MULIMANI, B. G et al.Physica. E, low-dimentional systems and nanostructures. 2004, Vol 21, Num 1, pp 143-153, issn 1386-9477, 11 p.Article

Intersubband lifetime tuning by magnetophonon resonance in GaAs/GaA1As quantum cascade lasersDRACHENKO, O; SMIRNOV, D; LEOTIN, J et al.Physica. B, Condensed matter. 2004, Vol 346-47, pp 498-502, issn 0921-4526, 5 p.Conference Paper

Hydrostatic pressure effects on the donor impurity-related photoionization cross-section in cylindrical-shaped GaAs/GaAlas quantum well wiresCORREA, J. D; CEPEDA-GIRALDO, O; PORRAS-MONTENEGRO, N et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 14, pp 3311-3317, issn 0370-1972, 7 p.Conference Paper

Ground state transitions in vertically coupled N-layer single electron quantum dotsWENFANG XIE; ANMEI WANG.Solid state communications. 2003, Vol 128, Num 9-10, pp 369-373, issn 0038-1098, 5 p.Article

Quenching of the Hall effect in localised high magnetic field regionDUBONOS, S. V; NOVOSELOV, K. S; GEIM, A. K et al.SPIE proceedings series. 2003, pp 465-468, isbn 0-8194-4824-9, 4 p.Conference Paper