GaAs inversion-base bipolar transistor (GaAs IBT)MATSUMOTO, K; HAYASHI, Y; HASHIZUME, N et al.IEEE electron device letters. 1986, Vol 7, Num 11, pp 627-628, issn 0741-3106Article

Transistors à effet de champ à grille isolée sur hétérostructure GaAlAs/GaAs : étude, réalisation et application aux circuits intégrésAguila, Thierry; Graffeuil, Jacques.1989, 256 p.Thesis

35 GHz pure passively mode locked quantum dot lasers operating close to 1.3μmTAN, W. K; BRYCE, A. C; MARSH, J. H et al.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol2, 617-618Conference Paper

Quantum dot lasers using high-Q microdisk cavitiesMICHLER, P; KIRAZ, A; BECHER, C et al.Physica status solidi. B. Basic research. 2001, Vol 224, Num 3, pp 797-801, issn 0370-1972Conference Paper

New metal gate architecture achieved by chemical vapor deposition for a complete tunnel fillREGNIER, C; WACQUANT, F; LEVERD, F et al.Proceedings - Electrochemical Society. 2003, pp 391-396, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Comprehensive analysis of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different thickness of setback layersCHENG, Shiou-Ying; CHEN, Chun-Yuan; CHEN, Jing-Yuh et al.SPIE proceedings series. 2004, pp 384-391, isbn 0-8194-5169-X, 8 p.Conference Paper

III-V Junctionless Gate-All-Around Nanowire MOSFETs for High Linearity Low Power ApplicationsYI SONG; CHEN ZHANG; DOWDY, Ryan et al.IEEE electron device letters. 2014, Vol 35, Num 3, pp 324-326, issn 0741-3106, 3 p.Article

Hole Mobility Characteristics in Si Nanowire pMOSFETs on (110) Silicon-on-InsulatorJIEZHI CHEN; SARAYA, Takuya; HIRAMOTO, Toshiro et al.IEEE electron device letters. 2010, Vol 31, Num 11, pp 1181-1183, issn 0741-3106, 3 p.Article

Junctionless Vertical-Si-Nanowire-Channel-Based SONOS Memory With 2-Bit Storage per CellSUN, Y; YU, H. Y; SINGH, N et al.IEEE electron device letters. 2011, Vol 32, Num 6, pp 725-727, issn 0741-3106, 3 p.Article

Modeling Short-Channel Effect of Elliptical Gate-All-Around MOSFET bv Effective RadiusLINING ZHANG; LIN LI; JIN HE et al.IEEE electron device letters. 2011, Vol 32, Num 9, pp 1188-1190, issn 0741-3106, 3 p.Article

Impact of Gate Electrodes on 1/f Noise of Gate-All-Around Silicon Nanowire TransistorsCHENGQING WEI; YU JIANG; XIONG, Yong-Zhong et al.IEEE electron device letters. 2009, Vol 30, Num 10, pp 1081-1083, issn 0741-3106, 3 p.Article

Design optimization of gate-all-around (GAA) MOSFETsJAE YOUNG SONG; WOO YOUNG CHOI; JU HEE PARK et al.IEEE transactions on nanotechnology. 2006, Vol 5, Num 3, pp 186-191, issn 1536-125X, 6 p.Conference Paper

Impacts of Nanocrystal Location on the Operation of Trap-Layer-Engineered Poly-Si Nanowired Gate-All-Around SONOS Memory DevicesLUO, Cheng-Wei; LIN, Horng-Chih; LEE, Ko-Hui et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 7, pp 1879-1885, issn 0018-9383, 7 p.Article

Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETsBANGSARUNTIP, Sarunya; COHEN, Guy M; MAJUMDAR, Amlan et al.IEEE electron device letters. 2010, Vol 31, Num 9, pp 903-905, issn 0741-3106, 3 p.Article

Minimizing variation in the electrical characteristics of gate-all-around thin film transistors through the use of multiple-channel nanowire and NH₃ plasma treatmentHUANG, Po-Chun; CHEN, Lu-An; CHEN, Chen-Chia et al.Microelectronic engineering. 2012, Vol 91, pp 54-58, issn 0167-9317, 5 p.Article

Extracting Mobility Degradation and Total Series Resistance of Cylindrical Gate-All-Around Silicon Nanowire Field-Effect TransistorsCHOI, Luryi; BYOUNG HAK HONG; LEE, Won-Seong et al.IEEE electron device letters. 2009, Vol 30, Num 6, pp 665-667, issn 0741-3106, 3 p.Article

High-Performance Twin Silicon Nanowire MOSFET (TSNWFET) on Bulk Si Wafer : Nanotechnology materials and devicesSUNG DAE SUK; KYOUNG HWAN YEO; SUNG HWAN KIM et al.IEEE transactions on nanotechnology. 2008, Vol 7, Num 2, pp 181-184, issn 1536-125X, 4 p.Article

Observation of metal-layer stress on Si nanowires in gate-all-around high-κ/metal-gate device structuresSINGH, N; FANG, W. W; RUSTAGI, S. C et al.IEEE electron device letters. 2007, Vol 28, Num 7, pp 558-561, issn 0741-3106, 4 p.Article

Impact of compositionally graded base regions on the DC and RF properties of reduced turn-on voltage InGaP-GaInAsN DHBTsSTEVENS, Kevin S; WELTY, Rebecca J; WELSER, Roger E et al.I.E.E.E. transactions on electron devices. 2004, Vol 51, Num 10, pp 1545-1553, issn 0018-9383, 9 p.Article

Broad-area InAs/GaAs quantum dot lasers incorporating Intermixed passive waveguideGORDEEV, N. Yu; TAN, W. K; BRYCE, A. C et al.Electronics Letters. 2007, Vol 43, Num 1, pp 29-30, issn 0013-5194, 2 p.Article

Reduced temperature sensitivity of lasing wavelength in near-1.3 μm InAs/GaAs quantum-dot laser with stepped composition strain-reducing layerLIU, H. Y; BADCOCK, T. J; JIN, C. Y et al.Electronics Letters. 2007, Vol 43, Num 12, pp 670-672, issn 0013-5194, 3 p.Article

Hétérostructures double barrière pour la réalisation de diodes et de transistors à effet tunnel résonnant = Double barrier heterostructures for resonant tunneling in two- and -three terminal configurationMounaix, Patrick; Lippens, Didier.1992, 230 p.Thesis

Transistor à effet de champ, à hétérojonction et grille isolée : fabrication et étude de SISFET GaAs!AlGaAs et GaAs!GaInAs!AlGaAsSchmidt, Poul Erik; Pons.1989, 176 p.Thesis

STM analysis of defects at the GaAs(001)-c(4 × 4) surfaceBRUHN, Thomas; FIMLAND, Bjørn-Ove; ESSER, Norbert et al.Surface science. 2013, Vol 617, pp 162-166, issn 0039-6028, 5 p.Article

Anomalous radiative lifetime in quantum rodsSREENIVASAN, D; HAVERKORT, J. E. M; NÖTZEL, R et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 63280T.1-63280T.9, issn 0277-786X, isbn 0-8194-6407-4, 1VolConference Paper