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Matériaux innovants pour lasers à 1,3 m sur substrat de GaAs = New materials for 1.3 m laser emission on GaAs substrateUngaro, Giovanni; Gallion, Philippe.2001, 137 p.Thesis

Analysis of temperature sensitive operation in 1.6-μm In_0.53Ga_0.47As lasersTAKESHIMA, M.Journal of applied physics. 1984, Vol 56, Num 3, pp 691-695, issn 0021-8979Article

Reduction of noise figure in semiconductor laser amplifiers with Ga_1-xIn_xAs/GaInAsP/InP strained quantum well structuresYIDONG HUANG; KOMORI, K; ARAI, S et al.IEEE journal of quantum electronics. 1993, Vol 29, Num 12, pp 2950-2956, issn 0018-9197Article

InGaAs/InP heterobipolar transistors for integration on semi-insulating InP substratesDÄMBKES, H; KÖNIG, U.Electronics Letters. 1984, Vol 20, Num 23, pp 955-957, issn 0013-5194Article

Theory of thermal behavior of laser operation in InD20_.53Ga_0.47AsTAKESHIMA, M.Journal of applied physics. 1984, Vol 56, Num 1, pp 49-56, issn 0021-8979Article

Carrier density saturation in a Ga_0.25In_0.75As/InP heterostructureMARTIN, T. P; MARLOW, C. A; SAMUELSON, L et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 5, pp 1754-1756, issn 1386-9477, 3 p.Conference Paper

Properties of In_xGa_1-xAs-GaAs strained-layer quantum-well-heterostructure injection lasersLAIDIG, W. D; LIN, Y. F; CALDWELL, P. J et al.Journal of applied physics. 1985, Vol 57, Num 1, pp 33-38, issn 0021-8979Article

Silicon oxide enhanced Schottky gate In_0.53Ga_0.47AsFET's with a self-aligned recessed gate structureCHENG, C. L; LIAO, A. S. H; CHANG, T. Y et al.IEEE electron device letters. 1984, Vol 5, Num 12, pp 511-514, issn 0741-3106Article

Short-wavelength intersubband staircase lasers, with and without AlAs-blocking barriersFRIEDRICH, A; BOEHM, G; AMANN, M. C et al.Semiconductor science and technology. 2007, Vol 22, Num 3, pp 218-221, issn 0268-1242, 4 p.Article

High-temperature (T=490 K) operation of 5.8 μm quantum cascade lasers with InP/GaInAs waveguidesFRIEDRICH, A; SCARPA, G; BOEHM, G et al.Electronics Letters. 2004, Vol 40, Num 22, pp 1416-1417, issn 0013-5194, 2 p.Article

Required grading length to eliminate the heterojunction spike in npn In_0.52Al_0.48As/In_0.53Ga_0.47As/InP bipolar transistorsCHAND, N; MORKOC, H.Electronics Letters. 1985, Vol 21, Num 19, pp 841-843, issn 0013-5194Article

Transistor à effet de champ, à hétérojonction et grille isolée : fabrication et étude de SISFET GaAs!AlGaAs et GaAs!GaInAs!AlGaAsSchmidt, Poul Erik; Pons.1989, 176 p.Thesis

Design and lasing operation of micro-arc-ring lasersMITSUGI, S; KATO, J; KOYAMA, F et al.Japanese journal of applied physics. 1994, Vol 33, Num 11, pp 6201-6202, issn 0021-4922, 1Article

Calculation of gain and luminescence spectra of quantum-cascade laser structures taking into account asymmetric emission line broadeningUSHAKOV, D. V; KONONENKO, V. K; MANAK, I. S et al.Quantum electronics (Woodbury). 2010, Vol 40, Num 3, pp 195-198, issn 1063-7818, 4 p.Article

Improved performance of MBE grown quantum-dot lasers with asymmetric dots in a well design emitting near 1.3 μmKREBS, R; DEUBERT, S; REITHMAIER, J. P et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 742-747, issn 0022-0248, 6 p.Conference Paper

Reactor structure dependence of interface abruptness in GaInAs/InP and gainp/gaas grown by organometallic vapor phase epitaxyFUJIWARA, Yasufumi; NONOGAKI, Yoichi; RYO OGA et al.Applied surface science. 2003, Vol 216, Num 1-4, pp 564-568, issn 0169-4332, 5 p.Conference Paper

A In_0.53Ga_0.47As-In_0.48As single quantum well field-effect transistorSEO, K. S; BHATTACHARYA, P. K; NASHIMOTO, Y et al.IEEE electron device letters. 1985, Vol 6, Num 12, pp 642-644, issn 0741-3106Article

High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistorsKETTERSON, A; MOLONEY, M; MASSELINK, W. T et al.IEEE electron device letters. 1985, Vol 6, Num 12, pp 628-630, issn 0741-3106Article

Determination of excitonic binding energies in symmetrically strained (GaIn)As/Ga(AsP) multiple quantum wells using quantum beat spectroscopyKOCH, M; VOLK, M; MEIER, T et al.Superlattices and microstructures. 1994, Vol 15, Num 3, pp 329-332, issn 0749-6036Article

InGaAs/InP junction field-effect transistors with high transconductance made using metal organic vapor phase epitaxyWAKE, D; NELSON, A. W; COLE, S et al.IEEE electron device letters. 1985, Vol 6, Num 12, pp 626-627, issn 0741-3106Article

Selectively doped n⁺ InP/n^- GalnAs heterostructure prepared using chloride transport vapour-phase epitaxyTAKIKAWA, M; KOMENO, J; OZEKI, M et al.Electronics Letters. 1984, Vol 20, Num 7, pp 306-307, issn 0013-5194Article

Density of the 2D electron gas in modulation doped GaInAs/AlInAs layers from a charge control analysis = Dichte des zweidimensionalen Elektronengases in moduliert dotierten GaInAs/AlInAs-Schichten aus einer ladungskontrollierten AnalyseCHAUDHURI, D.R; ROY, J.B; BASU, P.K et al.Physica status solidi. A. Applied research. 1984, Vol 86, Num 1, pp K79-K82, issn 0031-8965Article

Free-form Fresnel RXI-RR Köhler design with spectrum-splitting for photovoltaicsBULJAN, M; BENITEZ, P; MOHEDANO, R et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8167, issn 0277-786X, isbn 978-0-8194-8793-3, 81670I.1-81670I.9Conference Paper

Temperature dependences of Ga_0.66In_0.34As-InP tensile-strained quasi-quantum-wire laser fabricated by wet chemical etching and 2-step OMVPE growthKI-CHUL SHIN; ARAI, S; NAGASHIMA, Y et al.IEEE photonics technology letters. 1995, Vol 7, Num 4, pp 345-347, issn 1041-1135Article