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Optical and electrical properties of modulation-doped n and p-type Ga_xIn_1-xNyAs_1-y/GaAs quantum wells for 1.3 μm laser applicationsSUN, Y; EROL, A; FONTAINE, C et al.Optical and quantum electronics. 2008, Vol 40, Num 7, pp 467-474, issn 0306-8919, 8 p.Article

10 Gbit/s modulation of 1.3 μm GalnNAs lasers up to 110°CGUSTAVSSON, J. S; WEI, Y. Q; SADEGHI, M et al.Electronics Letters. 2006, Vol 42, Num 16, pp 925-926, issn 0013-5194, 2 p.Article

Theoretical study of GaInNAs-GaAs-based semiconductor optical amplifiersALEXANDROPOULOS, Dimitris; ADAMS, Mike J.IEEE journal of quantum electronics. 2003, Vol 39, Num 5, pp 647-655, issn 0018-9197, 9 p.Article

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Dynamics and temperature-dependence of 1.3-μm GaInNAs double quantum-well lasersYONGQIANG WEI; GUSTAVSSON, Johan S; SADEGHI, Mahdad et al.IEEE journal of quantum electronics. 2006, Vol 42, Num 11-12, pp 1274-1280, issn 0018-9197, 7 p.Article

Formation of self-assembled InGaAsN/GaP quantum dots by molecular-beam epitaxyUMENO, K; FURUKAWA, Y; URAKAMI, N et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 10, pp 2772-2776, issn 1386-9477, 5 p.Conference Paper

Very low threshold current density 1.29 μm GalnNAs triple quantum well lasers grown by MBEZHAO, H; ADOLFSSON, G; WANG, S. M et al.Electronics Letters. 2008, Vol 44, Num 6, pp 416-417, issn 0013-5194, 2 p.Article

1.34 μm GalnNAs quantum well lasers with low room-temperature threshold current densityHOPKINSON, M; JIN, C. Y; LIU, H. Y et al.Electronics Letters. 2006, Vol 42, Num 16, pp 923-924, issn 0013-5194, 2 p.Article

Wavelength elongation and improved emission efficiency of MOCVD-grown InAs quantum dots by GaNAs buffer layerSUZUKI, R; MIYAMOTO, T; KOYAMA, F et al.Journal of crystal growth. 2007, Vol 298, pp 574-577, issn 0022-0248, 4 p.Conference Paper

MOVPE growth optimization for optically efficient GaInNAs quantum well structureKIM, Ki-Sung; LIM, Sung-Jin; KIM, Ki-Hong et al.Journal of crystal growth. 2005, Vol 273, Num 3-4, pp 368-374, issn 0022-0248, 7 p.Article

Structural and optical properties of high In and N content GaInNAs quantum wellsHERRERA, M; GONZALEZ, D; GARCIA, R et al.Thin solid films. 2005, Vol 483, Num 1-2, pp 185-190, issn 0040-6090, 6 p.Article

Improved performance of MOVPE-grown GaInNAs quantum wells by control of interfacial strainKIM, Ki-Sung; YOO, Jae-Ryung; LIM, Sung-Jin et al.Journal of crystal growth. 2004, Vol 272, Num 1-4, pp 748-752, issn 0022-0248, 5 p.Conference Paper

Optical property of self-assembled GaInNAs quantum dots grown by solid source molecular beam epitaxyYEW, K. C; YOON, S. F; SUN, Z. Z et al.Journal of crystal growth. 2003, Vol 247, Num 3-4, pp 279-283, issn 0022-0248, 5 p.Article

Nonlinear optical absorption and refractive index in GaInNAs/GaAs double quantum wells under intense laser field and applied electric fieldUNGAN, F; YESILGUL, U; SAKIROGLU, S et al.Journal of luminescence. 2013, Vol 143, pp 75-80, issn 0022-2313, 6 p.Article

Current Spreading Efficiency and Fermi Level Pinning in GaInNAs-GaAs Quantum-Well Laser DiodesMONTES BAJO, Miguel; HIERRO, Adrian; ULLOA, José María et al.IEEE journal of quantum electronics. 2010, Vol 46, Num 7-8, pp 1058-1065, issn 0018-9197, 8 p.Article

Improvement of GaInNAsSb films fabricated by atomic hydrogen-assisted molecular beam epitaxyMIYASHITA, Naoya; ICHIKAWA, Shuhei; OKADA, Yoshitaka et al.Journal of crystal growth. 2009, Vol 311, Num 12, pp 3249-3251, issn 0022-0248, 3 p.Article

Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxyLIU, H. F; XIANG, N; ZHOU, H. L et al.Journal of crystal growth. 2007, Vol 301-302, pp 548-551, issn 0022-0248, 4 p.Conference Paper

Parameter tunable GaInNAs saturable absorbers for mode locking of solid-state lasersRUTZ, A; LIVERINI, V; GRANGE, R et al.Journal of crystal growth. 2007, Vol 301-302, pp 570-574, issn 0022-0248, 5 p.Conference Paper

Influence of electrostatic confinement on optical gain in GaInNAs quantum-well lasersHEALY, Sorcha B; O'REILLY, Eoin P.IEEE journal of quantum electronics. 2006, Vol 42, Num 5-6, pp 608-615, issn 0018-9197, 8 p.Article

Thermal annealing effects and local atomic configurations in GaInNAs thin filmsUNO, Kazuyuki; YAMADA, Masako; TANAKA, Ichiro et al.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 214-218, issn 0022-0248, 5 p.Conference Paper

1.3 μm double quantum well GaInNAs distributed feedback laser diode with 13.8 GHz small signal modulation bandwidthGOLLUB, D; MOSES, S; FORCHEL, A et al.Electronics Letters. 2004, Vol 40, Num 19, pp 1181-1182, issn 0013-5194, 2 p.Article

Photo-induced transient spectroscopy of defect levels in GaInNAsEROL, A; MAZZUCATO, S; ARIKAN, M. C et al.Semiconductor science and technology. 2003, Vol 18, Num 11, pp 968-972, issn 0268-1242, 5 p.Article

Growth characteristics of GaInNAs/GaAs quantum dots by chemical beam epitaxyMAKINO, Shigeki; MIYAMOTO, Tomoyuki; OHTA, Masataka et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 372-377, issn 0022-0248, 6 p.Conference Paper

Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 μm wavelengthLI, L. H; PATRIARCHE, G; LEMAITRE, A et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 403-407, issn 0022-0248, 5 p.Conference Paper