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Low fraction of hexagonal inclusions in thick and bulk cubic GaN layersWAHEEDA, S. N; ZAINAL, N; HASSAN, Z et al.Applied surface science. 2014, Vol 317, pp 1010-1014, issn 0169-4332, 5 p.Article

Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaNZAINAL, N; NOVIKOV, S. V; AKIMOV, A. V et al.Physica. B, Condensed matter. 2012, Vol 407, Num 15, pp 2964-2966, issn 0921-4526, 3 p.Conference Paper

Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seedsAMILUSIK, M; SOCHACKI, T; LUCZNIK, B et al.Journal of crystal growth. 2014, Vol 403, pp 48-54, issn 0022-0248, 7 p.Conference Paper

Epitaxy of m-plane GaN on nanoscale patterned c-plane sapphire substratesLIN, Yu-Sheng; LIN, Kung-Hsuan; CHANG, Yu-Ming et al.Surface science. 2012, Vol 606, Num 1-2, issn 0039-6028, L1-L4Article

Study of GaN adsorption on the Si surfaceWEI LI; CHEN, Jun-Fang; TENG WANG et al.Applied surface science. 2009, Vol 256, Num 1, pp 191-193, issn 0169-4332, 3 p.Article

Studies of carbon behaviour on GaN surface in ultra high vacuum (UHV)DIALE, M; AURET, F. D; ODENDAAL, R. Q et al.Surface and interface analysis. 2005, Vol 37, Num 13, pp 1158-1160, issn 0142-2421, 3 p.Article

Shape-controlled synthesis of GaN microrods by ammonolysis routeKENYAN BAO; WENMIN LIU; AIHUA WANG et al.Applied surface science. 2012, Vol 263, pp 682-687, issn 0169-4332, 6 p.Article

Control of nucleation site density of GaN nanowiresCHANG, Chih-Yang; PEARTON, S. J; HUANG, Ping-Jung et al.Applied surface science. 2007, Vol 253, Num 6, pp 3196-3200, issn 0169-4332, 5 p.Article

Anti-reflective and hydrophobic surface of self-organized GaN nano-flowersDHAMODARAN, S; SATHISH CHANDER, D; RAMKUMAR, J et al.Applied surface science. 2011, Vol 257, Num 22, pp 9612-9615, issn 0169-4332, 4 p.Article

Polarity inversion of GaN(0001) surfaces induced by Si adsorptionROSA, A. L; NEUGEBAUER, J.Surface science. 2006, Vol 600, Num 2, pp 335-339, issn 0039-6028, 5 p.Article

A critical commentary on Gans' Symbolic ethnicity and symbolic religiosity and other formulations of ethnicity and religion regarding American JewsSHAROT, S.Contemporary Jewry. 1997, Vol 18, pp 25-43, issn 0147-1694Article

Material and device issues of AlGaN/GaN HEMTs on silicon substratesJAVORKA, P; ALAM, A; MARSO, M et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 435-437, issn 0959-8324, 3 p.Conference Paper

Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etchingCHEN, Kuei-Ming; YEH, Yen-Hsien; WU, Yin-Hao et al.Journal of crystal growth. 2010, Vol 312, Num 24, pp 3574-3578, issn 0022-0248, 5 p.Article

Growth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowingSHIN, In-Su; DONGHYUN LEE; LEE, Keon-Hoon et al.Thin solid films. 2013, Vol 546, pp 118-123, issn 0040-6090, 6 p.Conference Paper

Microstructure of GaN layers grown on Si(111) revealed by TEMDOBOS, L; PECZ, B; FELTIN, E et al.Vacuum. 2003, Vol 71, Num 1-2, pp 285-291, issn 0042-207X, 7 p.Conference Paper

Source-Connected p-GaN Gate HEMTs for Increased Threshold VoltageHWANG, Injun; OH, Jaejoon; HYUK SOON CHOI et al.IEEE electron device letters. 2013, Vol 34, Num 5, pp 605-607, issn 0741-3106, 3 p.Article

Current-Transport Mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructuresARSLAN, Engin; TURAN, Sevil; GÖKDEN, Sibel et al.Thin solid films. 2013, Vol 548, pp 411-418, issn 0040-6090, 8 p.Article

Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting DiodesSENAWIRATNE, J; LI, Y; ZHU, M et al.Journal of electronic materials. 2008, Vol 37, Num 5, pp 607-610, issn 0361-5235, 4 p.Article

High-quality a-plane (11-20) GaN growth using double-lens structure on r-plane sapphireDAEHONG MIN; GEUNHO YOO; SEUNGHWAN MOON et al.Journal of crystal growth. 2014, Vol 387, pp 86-90, issn 0022-0248, 5 p.Article

Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructureHARMATHA, Ladislav; STUCHLIKOVA, Lubica; RACKO, Juraj et al.Applied surface science. 2014, Vol 312, pp 102-106, issn 0169-4332, 5 p.Article

The Effect of Growth Pressure and Growth Rate on the Properties of Mg-Doped GaNBINGLEI FU; NAIXIN LIU; JINMIN LI et al.Journal of electronic materials. 2014, Vol 43, Num 4, pp 1244-1248, issn 0361-5235, 5 p.Article

Efficient photoelectrochemical water splitting by a doping-controlled GaN photoanode coated with NiO cocatalystKANG, Jin-Ho; SOO HEE KIM; EBAID, Mohamed et al.Acta materialia. 2014, Vol 79, pp 188-193, issn 1359-6454, 6 p.Article

Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seedsSOCHACKI, T; AMILUSIK, M; FIJALKOWSKI, M et al.Journal of crystal growth. 2014, Vol 407, pp 52-57, issn 0022-0248, 6 p.Article

High-Detectivity Nitride-Based MSM Photodetectors on InGaN-GaN Multiquantum Well With the Unactivated Mg-Doped GaN LayerCHANG, Ping-Chuan; YU, C. L; CHANG, S. J et al.IEEE journal of quantum electronics. 2007, Vol 43, Num 11-12, pp 1060-1064, issn 0018-9197, 5 p.Article

Hydride vapour phase epitaxy of GaN on molecular beam epitaxial GaN substratesBEL'KOV, V. V; BOTNARYUK, V. M; KATSAVETS, N. I et al.Journal of crystal growth. 1998, Vol 187, Num 1, pp 29-34, issn 0022-0248Article

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