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Systèmes Ga(IO3)3-Ga(NO3)3-H2O et Ga(IO3)3-Ga2(SO4)3-H2O à 25°CSHKLOVSKAYA, R. M; ARKHIPOV, S. M; KIDYAROV, B. I et al.Žurnal neorganičeskoj himii. 1987, Vol 32, Num 9, pp 2334-2336, issn 0044-457XArticle

Modeling of GaInP/GaAs/Ge and the inverted-grown metamorphic GaInP/GaAs/GaInAs triple-junction solar cellsXIAO, Y. G; LI, Z. Q; LI, Z. M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7043, pp 70430B.1-70430B.12, issn 0277-786X, isbn 978-0-8194-7263-2 0-8194-7263-8, 1VolConference Paper

Pseudomorphic InGaAs-GaAsP quantum well modulators on GaAsCUNNINGHAM, J. E; GOOSSEN, K. W; WILIAMS, M et al.Applied physics letters. 1992, Vol 60, Num 6, pp 727-729, issn 0003-6951Article

Dry etching of GaAs, AlGaAs, and GaSb in hydrochlorofluorocarbon mixturesPEARTON, S. J; HOBSON, W. S; CHAKRABARTI, U. K et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 12, pp 3892-3899, issn 0013-4651Article

Vapor Pressures of Gallium Trifluoride, Trichloride, and Triiodide and Their Standard Sublimation EnthalpiesBRUNETTI, Bruno; PIACENTE, Vincenzo; SCARDALA, Paolo et al.Journal of chemical and engineering data (Print). 2010, Vol 55, Num 1, pp 98-102, issn 0021-9568, 5 p.Article

Incorporation rate variation at heterointerfaces during III-V molecular beam epitaxyEVANS, K. R; STUTZ, C. E; TAYLOR, E. N et al.Applied surface science. 1992, Vol 56-58, pp 677-683, issn 0169-4332, bConference Paper

InGaAs/GaAs 0.98 μm semi-insulating blocked planar buried heterostructure lasers employing InGaAsP cladding layersYOUNG, M. G; KOREN, U; MILLER, B. I et al.IEEE photonics technology letters. 1992, Vol 4, Num 2, pp 116-118Article

Precise determination of turning mirror loss using GaAs/AlGaAs lasers with up to ten 90° intracavity turning mirrorsJOHNSON, J. E; TANG, C. L.IEEE photonics technology letters. 1992, Vol 4, Num 1, pp 24-26Article

Metalorganic molecular beam epitaxy of InP, Ga0.47In0.53As, and GaAs with tertiarybutylarsine and tertiarybutylphosphineRITTER; PANISH, M. B; THAMM, R. A et al.Applied physics letters. 1990, Vol 56, Num 15, pp 1448-1450, issn 0003-6951Article

Ga1―XAlXAs/GaAs monolithic cascade solar cells: limitation of the GaAlAs cell performance near the cross-over regionSALETES, A; RUDRA, A; BASMAJI, P et al.Photovoltaic specialists conference. 19. 1987, pp 124-127Conference Paper

Temperature dependence of GaAs/AlGaAs multiquantum barrier lasersTAKAGI, T; IGA, K.IEEE photonics technology letters. 1992, Vol 4, Num 12, pp 1322-1324, issn 1041-1135Article

Density of states of quasi-two, -one, and -zero dimensional superlatticesCHO, H.-S; PRUCNAL, P. R.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 6, pp 1363-1367, issn 0734-211XArticle

GaInP2/GaAs monolithic tandem solar cellsOLSON, J. M; KIBBLER, A; KURTZ, S et al.Photovoltaic specialists conference. 19. 1987, pp 285-288Conference Paper

New simple synthesis route of GaN powders from gallium oxyhydroxideCHO, Sungryong; LEE, Jongwon; IN YONG PARK et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 95, Num 3, pp 275-278, issn 0921-5107Article

Rapid synthesis of GaP and GaAs from solid-state precursorsTREECE, R. E; MACALA, G. S; KANER, R. B et al.Chemistry of materials. 1992, Vol 4, Num 1, pp 9-11, issn 0897-4756Article

GaAs/GaAlAs SQW-GRINSCH-BCRW-laser grown by molecular beam epitaxyGROTHE, H; JORDAN, V; HARTH, W et al.AEU. Archiv für Elektronik und Übertragungstechnik. 1991, Vol 45, Num 2, pp 124-126, issn 0001-1096Article

Selectively doped double-heterojunction lateral current injection ridge waveguide AlGaAs/GaAs laserYASUHIRA, N; SUEMUNE, I; KAN, Y et al.Applied physics letters. 1990, Vol 56, Num 15, pp 1391-1393, issn 0003-6951Article

Ga0.47In0.53As field-effect transistors with a lattice-mismatched reduced leakage current GaAs gateGARBINSKI, P. A; CHEN, C. Y; CHO, A. Y et al.Electronics Letters. 1986, Vol 22, Num 5, pp 236-238, issn 0013-5194Article

Photoluminescence d'hétérostructures InGaAsP/GaAs à effet dimensionnel quantique obtenues par la méthode d'épitaxie en phase liquideALFEROV, ZH. I; ANTONISHKIS, N. YU; ARSENT'EV, I. N et al.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 12, pp 2145-2149, issn 0015-3222Article

Growth of cubic GaN on GaAs(001) and Si(001) by plasma-assisted MBEPLOOG, K. H; YANG, B; YANG, H et al.SPIE proceedings series. 1998, pp 271-276, isbn 0-8194-2756-X, 2VolConference Paper

GaInAs/GaAs thermally actuated optical switchPARTAIN, L. D; SCHULTZ, J. C; VIRSHUP, G. F et al.Applied physics letters. 1990, Vol 57, Num 18, pp 1840-1842, issn 0003-6951Article

Pseudomorphic InGaAs base ballistic hot-electron deviceSEO, K; HEIBLUM, M; KNOEDLER, C. M et al.Applied physics letters. 1988, Vol 53, Num 20, pp 1946-1948, issn 0003-6951Article

Lattice-strained heterojunction InGaAs/GaAs bipolar structures: recombination properties and device performanceRAMBERG, L. P; ENQUIST, P. M; CHEN, Y.-K et al.Journal of applied physics. 1987, Vol 61, Num 3, pp 1234-1236, issn 0021-8979Article

Improvement of interface electronic properties of GaF3/GaAs MIS structuresRICARD, H; AIZAWA, K; ISHIWARA, H et al.Applied surface science. 1992, Vol 56-58, pp 888-893, issn 0169-4332, bConference Paper

Optically controlled absorption modulator based on state filling of InxGa1-xAs/GaAs quantum wellsIANNELLI, J. M; MASERJIAN, J; HANCOCK, B. R et al.Applied physics letters. 1989, Vol 54, Num 4, pp 301-303, issn 0003-6951, 3 p.Article

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