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Precise determination of turning mirror loss using GaAs/AlGaAs lasers with up to ten 90° intracavity turning mirrorsJOHNSON, J. E; TANG, C. L.IEEE photonics technology letters. 1992, Vol 4, Num 1, pp 24-26Article

Effect of rapid thermal annealing on planar-doped pseudomorphic InGaAs high electron mobility transistor structuresSTREIT, D. C; JONES, W. L; SADWICK, L. P et al.Applied physics letters. 1991, Vol 58, Num 20, pp 2273-2275, issn 0003-6951Article

Quarter-micrometer low-noise pseudomorphic GaAs HEMT's with extremely low dependence of the noise figure on drain-source currentWENGER, J.IEEE electron device letters. 1993, Vol 14, Num 1, pp 16-18, issn 0741-3106Article

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Electroluminescent processes in quantum well structuresTSUI, E.S.-M; BLOOD, P; FLETCHER, E. D et al.Semiconductor science and technology. 1992, Vol 7, Num 6, pp 837-844, issn 0268-1242Article

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Carbon doping in AlGaAs for AlGaAs/GaAs graded-base heterojunction bipolar transistor by flow-rate modulation epitaxyITO, H; MAKIMOTO, T.Applied physics letters. 1991, Vol 58, Num 24, pp 2770-2772, issn 0003-6951Article

Molecular-beam epitaxy growth and uniformity test of modulation-doped Al_0.3Ga_0.7As/GaAs heterostructure on 4-in.diameter GaAs(100)YANG, K; SO, K. C; TAYLOR, A. P et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 5, pp 2548-2550, issn 0734-211XArticle

Novel photonic switch arrays consisting of vertically integrated multiple-quantum-well reflection modulators and phototransistors : exciton absorptive reflection switchAMANO, C; MATSUO, S; KUROKAWA, T et al.IEEE Photonics technology letters. 1991, Vol 3, Num 8, pp 736-738Article

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Thermal resistance measurements for AlGaAs/GaAs heterojunction bipolar transistorsADLERSTEIN, M. G; ZAITLIN, M. P.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 6, pp 1553-1554, issn 0018-9383Article

Highly strained GaAs/InGaAs/AlAs resonant tunneling diodes with simultaneously high peak current densities and peak-to-valley ratios at room temperatureKAPRE, R. M; MADHUKAR, A; GUHA, S et al.Applied physics letters. 1991, Vol 58, Num 20, pp 2255-2257, issn 0003-6951Article

Inline optical filter using lifted-off GaAs/AlGaAs multilayerDELL, J. M; YOFFE, G. W.Electronics Letters. 1991, Vol 27, Num 1, pp 26-27, issn 0013-5194Article

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Effect of many-body corrections on intersubband optical transitions in GaAs-Al_xGa_1-xAs multiple quantum wellsJOGAI, B.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 5, pp 2473-2478, issn 0734-211XArticle

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Very fast integrated optoelectronic logic for parallel computation using photodiode gatesKAMIYAMA, H; SHOUNO, A; UMEMOTO, Y et al.Japanese journal of applied physics. 1990, Vol 29, Num 7, pp L1248-L1251, issn 0021-4922, 2Article

Single-mode semiconductor optical waveguides with large dimensions suitable for compact bend applicationsDERI, R. J; SHAHAR, A; COLAS, E et al.Applied physics letters. 1990, Vol 57, Num 23, pp 2396-2398, issn 0003-6951Article

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