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Effect of conduction-band discontinuity on lasing characteristics of 1.5 μm InGaAs/In(Ga)AlAs MQW-FP lasersWAKATSUKI, A; KAWAMURA, Y; NOGUCHI, Y et al.IEEE photonics technology letters. 1993, Vol 5, Num 4, pp 383-386, issn 1041-1135Article

Resonant-cavity InGaAIAs/InGaAs/InAIAs phototransistors with high gain for 1.3-1.6 μmANANTH DODABALAPUR; CHANG, T. Y.Applied physics letters. 1992, Vol 60, Num 8, pp 929-931, issn 0003-6951Article

Increased optical saturation intensities in GaInAs multiple quantum wells by the use of AlGaInAs barriersWOOD, T. H; CHANG, T. Y; PASTALAN, J. Z et al.Electronics Letters. 1991, Vol 27, Num 3, pp 257-259, issn 0013-5194Article

Novel etching technique for a buried heterostructure GaInAs/AIgaInAs quantum-well laser diodeKASUKAWA, A; BHAT, R; CANEAU, C et al.Applied physics letters. 1991, Vol 59, Num 11, pp 1269-1271, issn 0003-6951Article

Direct comparison of InGaAs/InGaAlAs and InGaAs/InGaAsP quantum well modulatorsHAWDON, B. J; TÜTKEN, T; HANGLEITER, A et al.Electronics Letters. 1993, Vol 29, Num 8, pp 705-707, issn 0013-5194Article

Growth and assessment of InGaAs/InGaAlAs/InP multiple quantum well lasersGLEW, R. W; GREENE, P. D; HANSHALL, G. D et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 784-789, issn 0022-0248Conference Paper

Thermally stable optical bistability in an InGaAs/InGaAlAs etalon at 1.5μmp wavelengthNEILSON, D. T; EHRLICH, J. E; WALKER, A. C et al.Electronics Letters. 1993, Vol 29, Num 15, pp 1374-1375, issn 0013-5194Article

Charge injection frequency multiplierMENSZ, P. M; SIVCO, D. L; CHO, A. Y et al.Applied physics letters. 1992, Vol 61, Num 8, pp 934-936, issn 0003-6951Article

InGaAs/GaAs 0.98 μm semi-insulating blocked planar buried heterostructure lasers employing InGaAsP cladding layersYOUNG, M. G; KOREN, U; MILLER, B. I et al.IEEE photonics technology letters. 1992, Vol 4, Num 2, pp 116-118Article

Metalorganic molecular beam epitaxy of InP, Ga0.47In0.53As, and GaAs with tertiarybutylarsine and tertiarybutylphosphineRITTER; PANISH, M. B; THAMM, R. A et al.Applied physics letters. 1990, Vol 56, Num 15, pp 1448-1450, issn 0003-6951Article

Performance characteristics of In0.53Ga0.47As/In0.52Al0.48As modulation-doped field-effect transistors realized by two-step epitaxy : effects of molecular-beam epitaxial regrowthLAI, R; BHATTACHARYA, P. K.Journal of applied physics. 1990, Vol 67, Num 9, pp 4345-4348, issn 0021-8979, 1Article

PIN diodes provide low-cost detectors for fiber lasersWOJTUNIK, H. J.Laser focus world. 1992, Vol 28, Num 3, pp 115-120, issn 1043-8092, 3 p.Article

GaInAs/GaAs thermally actuated optical switchPARTAIN, L. D; SCHULTZ, J. C; VIRSHUP, G. F et al.Applied physics letters. 1990, Vol 57, Num 18, pp 1840-1842, issn 0003-6951Article

Impact ionization coefficients for electrons and holes in strained In0.2Ga0.8As and In0.15Ga0.63Al0.22As channels embedded in Al0.3Ga0.7AsCHEN, Y. C; BHATTACHRYA, P. K.Journal of applied physics. 1993, Vol 73, Num 1, pp 465-467, issn 0021-8979Article

InGaAs/InGaAlAs MQW lasers with InGaAsP guiding layers grown by gas source molecular beam epitaxyKAWAMURA, Y; WAKATSUKI, A; NOGUCHI, Y et al.IEEE photonics technology letters. 1991, Vol 3, Num 11, pp 960-962Article

Interband tunneling in heterostructure tunnel diodesYANG, R. Q; SWEENY, M; DAY, D et al.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 3, pp 442-446, issn 0018-9383Article

Room-temperature optical nonlinearities of GaInAs/AllnAs and GaAIInAs/AllnAs multiple quantum wells and integrated-mirror etalons at 1.3 μmHSU, C. C; MCGINNIS, B. P; SOKOLOFF, J. P et al.Journal of applied physics. 1991, Vol 70, Num 10, pp 5615-5618, issn 0021-8979, 1Article

Ellipsometric characterization of InP-based quantum well structuresROSSOW, U; KROST, A; WERNINGHAUS, T et al.Thin solid films. 1993, Vol 233, Num 1-2, pp 180-184, issn 0040-6090Conference Paper

Effect of hot-electron injection on high-frequency characteristics of abrupt in0.52(Ga1xAlx)0.48As/InGaAs HBT'sFUKANO, H; NAKAJIMA, H; ISHIBASHI, T et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 3, pp 500-506, issn 0018-9383Article

Static and dynamic characteristics in metalorganic-vapor-phase-epitaxy-grown 1585 nm InGaAs/InGaAlAs separate confinement heretostructure multiple-quantum-well metal-clad ridge-waveguide lasersSTEGMÜLLER, B; BORCHERT, B; HEDRICH, H et al.Japanese journal of applied physics. 1991, Vol 30, Num 11A, pp 2781-2785, issn 0021-4922, 1Article

Very low threshold 1.5μm GaInAs/AlGalnAs BH grinsch strained-layer quantum well laser diodes grown by MOCVDKASUKAWA, A; BHAT, R; CANEAU, C et al.Electronics Letters. 1991, Vol 27, Num 18, pp 1676-1678, issn 0013-5194Article

Novel differentially strained p-doped quantum well infrared detectorKURODA, R. T; GARMIRE, E.Infrared physics. 1993, Vol 34, Num 2, pp 153-161, issn 0020-0891Article

Single-step bandgap control in InGaAs/InGaAlAs quantum well modulators via MeV implantsCHEN, Y; ZUCKER, J. E; TELL, B et al.Electronics Letters. 1993, Vol 29, Num 1, pp 87-88, issn 0013-5194Article

High speed ultralow chirp 1.55μm MBE grown GaInAs/AlGaInAs MQW DFB lasersBLEZ, M; KAZMIERSKI, C; MATHOORASING, D et al.Electronics Letters. 1992, Vol 28, Num 11, pp 1040-1042, issn 0013-5194Article

First DFB GRIN-SCH GalnAs/AlGalnAs 1.55μm MBE MQW active layer buried ridge structure lasersBLEZ, M; KAZMIERSKI, C; QUILLEC, M et al.Electronics Letters. 1991, Vol 27, Num 1, pp 93-95, issn 0013-5194Article

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