Surface emitting injection laserMOHAN, S.Indian journal of pure & applied physics. 1991, Vol 29, Num 2, pp 136-137, issn 0019-5596Article

A versatile two-dimensional model for InGaAsP quantum-well semiconductor lasersLI, Z.-M; DAVIES, M; DION, M et al.Canadian journal of physics (Print). 1992, Vol 70, Num 10-11, pp 937-942, issn 0008-4204Conference Paper

InGaAsP electroabsorption modulator for high-bit-rate EDFA systemSUZUKI, M; TANAKA, H; MATSUSHIMA, Y et al.IEEE photonics technology letters. 1992, Vol 4, Num 6, pp 586-588Article

Subpicosecond gain dynamics in InGaAsP optical amplifiers : experiment and theoryMARK, J; MØRK, J.Applied physics letters. 1992, Vol 61, Num 19, pp 2281-2283, issn 0003-6951Article

Lattice-matched InGaAsP/InP long-wavelength quantum well infrared photodetectorsGUNAPALA, S. D; LEVINE, B. F; RITTER, D et al.Applied physics letters. 1992, Vol 60, Num 5, pp 636-638, issn 0003-6951Article

Long wavelength high-speed semiconductor lasers with carrier transport effects : Ultrafast optics and electronicsISHIKAWA, M; RADHAKRISHNAN NAGARAJAN; FUKUSHIMA, T et al.IEEE journal of quantum electronics. 1992, Vol 28, Num 10, pp 2230-2241, issn 0018-9197Article

Dynamic behaviors of semiconductor lasers under strong sinusoidal current modulation : modeling and experiments at 1.3 μmHEMERY, E; CHUSSEAU, L; LOURTIOZ, J.-M et al.IEEE journal of quantum electronics. 1990, Vol 26, Num 4, pp 633-641, issn 0018-9197Article

Enhanced characteristics of InGaAsP buried quaternary lasers with pressures up to 1.5 GPaPATEL, D; MENONI, C. S; TEMKIN, H et al.Applied physics letters. 1993, Vol 62, Num 20, pp 2459-2461, issn 0003-6951Article

Strain effect on K factor, differential gain and nonlinear gain coefficient for InGaAs/InGaAsP strained multiquantum well lasersSHIMIZU, J.-I; KIMURA, A; NANIWAE, K et al.Electronics Letters. 1993, Vol 29, Num 7, pp 579-581, issn 0013-5194Article

10 Gbit/s operation of polarisation insensitive, strained InGaAsP/InGaAsP MQW electroabsorption modulatorDEVAUX, F; CHELLES, S; OUGAZZADEN, A et al.Electronics Letters. 1993, Vol 29, Num 13, pp 1201-1203, issn 0013-5194Article

Analysis of the light-current relationships in the optimized planar buried mesa ridge (PBMR) InGaAsP laserPROCHAZKOVA, O; NOVOTNY, J; SROBAR, F et al.Czechoslovak journal of physics. 1992, Vol 42, Num 5, pp 533-537, issn 0011-4626Article

Demonstration of broadband tunability in a semiconductor laser using sampled gratingsJAYARAMAN, V; COHEN, D. A; COLDREN, L. A et al.Applied physics letters. 1992, Vol 60, Num 19, pp 2321-2323, issn 0003-6951Article

1.53 μm InGaAsP-InP first-order λ/4-shifted distributed feedback lasers with high coupling coefficientsHILLMER, H; HANSMANN, S; BURKHARD, H et al.IEEE journal of quantum electronics. 1991, Vol 27, Num 6, pp 1753-1758, issn 0018-9197Article

In_0.53Ga_0.47As/InP multiquantum well lasers grown by metalorganic molecular beam epitaxy (MOMBE)SUGIURA, H; NOGUCHI, Y; IGA, R et al.Japanese journal of applied physics. 1991, Vol 30, Num 2B, pp L286-L288, issn 0021-4922, 2Article

Suppression of leakage current in InGaAsP/InP buried heterostructure laser by InAlAs strained current-blocking layersOHTOSHI, T; CHINONE, N.Electronics Letters. 1991, Vol 27, Num 1, pp 12-13, issn 0013-5194Article

Diagnostics of InGaAsP/InP heteroboundaries by Auger profiling of a chemical bevelGORELENOK, A. T; IL'INSKAYA, N. D; KOSTINA, M. I et al.Soviet physics. Technical physics. 1990, Vol 35, Num 10, pp 1220-1221, issn 0038-5662Article

Enhanced tunability of asymmetric three-section InGaAsP/InP distributed feedback lasersHILLMER, H; ZHU, H.-L; BURKHARD, H et al.Journal of applied physics. 1993, Vol 73, Num 3, pp 1035-1038, issn 0021-8979Article

Very high efficiency GalnAsP/GaAs strained-layer quantum well lasers (λ=980 nm) GalnAsP optical confinement layersGROVES, S. H; WALPOLE, J. N; MISSAGGIA, L. J et al.Applied physics letters. 1992, Vol 61, Num 3, pp 255-257, issn 0003-6951Article

GaInAs/InP quantum wells and strained-layer superlattices grown by chemical beam epitaxyUCHIDA, T. K; UCHIDA, T; YOKOUCHI, N et al.Japanese journal of applied physics. 1991, Vol 30, Num 2B, pp L228-L230, issn 0021-4922, 2Article

Active mode locking of an erbium-doped fiber laser using an intracavity laser diode deviceWIGLEY, P. G. J; BABUSHKIN, A. V; VUKUSIC, J. I et al.IEEE photonics technology letters. 1990, Vol 2, Num 8, pp 543-545, issn 1041-1135Article

Recent progress in high-power GaInAsP lasersOSHIBA, S; TAMURA, Y.Journal of lightwave technology. 1990, Vol 8, Num 9, pp 1350-1356, issn 0733-8724Conference Paper

Effects of nonuniform current injection in GaInAsP/InP vertical-cavity lasersWADA, H; BABIC, D. I; ISHIKAWA, M et al.Applied physics letters. 1992, Vol 60, Num 24, pp 2974-2976, issn 0003-6951Article

High-speed, low-threshold InGaAsP semi-insulating buried crescent lasers with 22 GHz bandwidthRONG-TING HUANG; WOLF, D; WOOD-HI CHENG et al.IEEE photonics technology letters. 1992, Vol 4, Num 4, pp 293-295Article

New high-rate dry etch mixure for InP-based heterostructuresPEARTON, S. J; CHAKRABARTI, U. K; COBLENTZ, D et al.Electronics Letters. 1992, Vol 28, Num 5, pp 448-449, issn 0013-5194Article

Origin of nonlinear gain saturation in index-guided InGaAsP laser diodesFRANKENBERGER, R; SCHIMPE, R.Applied physics letters. 1992, Vol 60, Num 22, pp 2720-2722, issn 0003-6951Article