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Gallium nitride electronicsRAJAN, Siddharth; JENA, Debdeep.Semiconductor science and technology. 2013, Vol 28, Num 7, issn 0268-1242, [249 p.]Serial Issue

Aqueous Stability of Ga- and N-Polar Gallium NitrideFOSTER, Corey M; COLLAZO, Ramon; SITAR, Zlatko et al.Langmuir. 2013, Vol 29, Num 1, pp 216-220, issn 0743-7463, 5 p.Article

Gallium nitride materials and devices VI (24-27 January 2011, San Francisco, California, United States)Chyi, Jen-Inn.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7939, issn 0277-786X, isbn 978-0-8194-8476-5, 1 vol, isbn 978-0-8194-8476-5Conference Proceedings

Influence of doping level on shift of the absorption edge of gallium nitride films (Burstein-Moss effect)SVITASHEVA, S. N; GILINSKY, A. M.Applied surface science. 2013, Vol 281, pp 109-112, issn 0169-4332, 4 p.Conference Paper

Comparison of GaN Schottky barrier and p-n junction photodiodesMAŁACHOWSKI, M; ROGALSKI, A.SPIE proceedings series. 1998, pp 206-213, isbn 0-8194-2726-8Conference Paper

Preparation and characterization of gallium nitride powderTREHAN, J. C; PARASHAR, D. C; RASHMI et al.SPIE proceedings series. 1998, pp 1318-1322, isbn 0-8194-2756-X, 2VolConference Paper

GaN growth by plasma assisted reactive evaporationSINHA, R. S; PAL, S; SHARMA, S. P et al.SPIE proceedings series. 1998, pp 356-359, isbn 0-8194-2756-X, 2VolConference Paper

T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablationDU, Y. D; CAO, H. Z; DUAN, X. M et al.Applied physics. A, Materials science & processing (Print). 2012, Vol 106, Num 3, pp 575-579, issn 0947-8396, 5 p.Article

Room-temperature low-threshold surface-stimulated emission by optical pumping from Al0.Ga0.9N/GaN double heterostructureAMANO, H; WATANABE, N; KOIDE, N et al.Japanese journal of applied physics. 1993, Vol 32, Num 7B, pp L1000-L1002, issn 0021-4922, 2Article

Optical characterization of AlGaN-GaN-AlGaN quantum wellsKRISHNANKUTTY, S; KOLBAS, R. M; KHAN, M. A et al.Journal of electronic materials. 1992, Vol 21, Num 4, pp 437-440, issn 0361-5235Article

Shape-controlled synthesis of GaN microrods by ammonolysis routeKENYAN BAO; WENMIN LIU; AIHUA WANG et al.Applied surface science. 2012, Vol 263, pp 682-687, issn 0169-4332, 6 p.Article

Growth and luminescence properties of Mg-doped gaN prepared by MOVPEAMANO, H; KITOH, M; HIRAMATSU, K et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 5, pp 1639-1641, issn 0013-4651Article

Electroluminescence from GaN-polymer heterojunctionCHITARA, Basant; LAL, Nidhi; KRUPANIDHI, S. B et al.Journal of luminescence. 2013, Vol 134, issn 0022-2313, p. 447Article

Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPEFUJITO, Kenji; KUBO, Shuichi; FUJIMURA, Isao et al.MRS bulletin. 2009, Vol 34, Num 5, pp 313-317, issn 0883-7694, 5 p.Article

Dot pattern epitaxial lateral overgrowth of GaN by hydride vapor phase epitaxyLIU, W. Y; TSAY, J. D; GUO, Y. D et al.Proceedings - Electrochemical Society. 2005, pp 289-295, issn 0161-6374, isbn 1-56677-462-4, 7 p.Conference Paper

Solution-based functionalization of gallium nitride nanowires for protein sensor developmentWILLIAMS, Elissa H; DAVYDOV, Albert V; OLESHKO, Vladimir P et al.Surface science. 2014, Vol 627, pp 23-28, issn 0039-6028, 6 p.Article

Anti-reflective and hydrophobic surface of self-organized GaN nano-flowersDHAMODARAN, S; SATHISH CHANDER, D; RAMKUMAR, J et al.Applied surface science. 2011, Vol 257, Num 22, pp 9612-9615, issn 0169-4332, 4 p.Article

Experimental demonstration of enhancement mode GaN MOSFETsHUANG, W; CHOW, T. P; KHAN, T et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 6, pp 2064-2067, issn 1862-6300, 4 p.Conference Paper

Low fraction of hexagonal inclusions in thick and bulk cubic GaN layersWAHEEDA, S. N; ZAINAL, N; HASSAN, Z et al.Applied surface science. 2014, Vol 317, pp 1010-1014, issn 0169-4332, 5 p.Article

Epitaxy of m-plane GaN on nanoscale patterned c-plane sapphire substratesLIN, Yu-Sheng; LIN, Kung-Hsuan; CHANG, Yu-Ming et al.Surface science. 2012, Vol 606, Num 1-2, issn 0039-6028, L1-L4Article

CHALLENGES & OPPORTUNITIES IN GaN AND ZnO DEVICES & MATERIALSMORKOC, Hadis; CHYI, Jen-Inn; KROST, Alois et al.Proceedings of the IEEE. 2010, Vol 98, Num 7, issn 0018-9219, 228 p.Serial Issue

Study of GaN adsorption on the Si surfaceWEI LI; CHEN, Jun-Fang; TENG WANG et al.Applied surface science. 2009, Vol 256, Num 1, pp 191-193, issn 0169-4332, 3 p.Article

The response time of GaN photoconductive detector under various ultraviolet-radiation intensitiesXU JINTONG; TANG YINWEN; LI XIANGYANG et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 59640Z.1-59640Z.7, issn 0277-786X, isbn 0-8194-5982-8, 1VolConference Paper

Photoluminescence investigation of ferromagnetic Ga1―xMnxN layers with GaN templates grown on sapphire (0 0 0 1) substratesYOON, I. T; HAM, M. H; MYOUNG, J. M et al.Applied surface science. 2009, Vol 255, Num 9, pp 4840-4843, issn 0169-4332, 4 p.Article

Gallium nitride materials and devices III (21-24 January 2008, San Jose, California, USA)Morkoç, Hadis.Proceedings of SPIE, the International Society for Optical Engineering. 2008, issn 0277-786X, isbn 978-0-8194-7069-0, 1Vol, various pagings, isbn 978-0-8194-7069-0Conference Proceedings

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