Zur Darstellung von Thiogallanen aus Galliumhalogeniden und Bleibis(thiolaten) = Synthèse de thiogallanes à partir d'halogénures de gallium et de bis-thiolates de plomb = Synthesis of thiogallanes via gallium halides and lead bis(thiolates)HOFFMANN, G. G.Chemische Berichte. 1985, Vol 118, Num 4, pp 1655-1667, issn 0009-2940Article

Systèmes Ga(IO3)3-Ga(NO3)3-H2O et Ga(IO3)3-Ga2(SO4)3-H2O à 25°CSHKLOVSKAYA, R. M; ARKHIPOV, S. M; KIDYAROV, B. I et al.Žurnal neorganičeskoj himii. 1987, Vol 32, Num 9, pp 2334-2336, issn 0044-457XArticle

Light scattering determinations of band offsets in semiconductor heterostructuresMENENDEZ, J; PINCZUK, A.IEEE journal of quantum electronics. 1988, Vol 24, Num 8, pp 1698-1711, issn 0018-9197Article

Directional dispersion of the phonon modes in optically uniaxial solids, far-infrared reflection spectra, dielectric and optic constants, dynamic effective ionic charges of the defect chalcopyrites CdGa₂S₄, CdGa₂Se₄, HgGa₂S₄ and HgGa₂Se₄HAEUSELER, H; WÄSCHENBACH, G; LUTZ, H. D et al.Physica status solidi. B. Basic research. 1985, Vol 129, Num 2, pp 549-558, issn 0370-1972Article

Über die Reaktivität von Phenylgalliumdiiodid und Methylgalliumdiiodid mit Alkyl- und Arylthiolen = Réactivité du diiodure de phénylgallium et du diiodure de méthylgallium vis-à-vis des alkyl- et des arylthiols = On the reactivity of phenyldiiodogallane and methyldiiodogallane with alkyl- and arylthiolsHOFFMANN, G. G.Zeitschrift für anorganische und allgemeine Chemie (1950). 1984, Num 514, pp 196-204, issn 0044-2313Article

Photometric determination of metallic gallium in gallium oxide after breakdown by bromine in an autoclaveKAPLAN, B.Ya; KUDRYAVTSEVA, G.S; MALYUTINA, T.M et al.Zavodskaâ laboratoriâ. 1983, Vol 49, Num 6, pp 7-8, issn 0321-4265Article

AlGaAs/GaAs heterojunction bipolar transistor circuits with improved high-speed performanceCHANG, M. F; ASBECK, P. M; WANG, K. C et al.Electronics Letters. 1986, Vol 22, Num 22, pp 1173-1174, issn 0013-5194Article

An empirical pseudopotential analysis of (100) and (110) GaAs-Al_xGa₁-_xAs heterojunctionsMARSH, A. C; INKSON, J. C.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 1, pp 43-52, issn 0022-3719Article

Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunctionKASTALSKY, A; HWANG, J. C. M.Solid state communications. 1984, Vol 51, Num 5, pp 317-322, issn 0038-1098Article

Fabrication and characterization of AlGaAs/GaAS heterojunction bipolar transistorsITO, H; ISHIBASHI, T; SUGETA, T et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 2, pp 224-229, issn 0018-9383Article

Photoconductivity in selectively n- and p-doped Al_xGa_1-x/GaAs heterostructuresSCHUBERT, E. F; FISCHER, A; PLOOG, K et al.Solid-state electronics. 1986, Vol 29, Num 2, pp 173-180, issn 0038-1101Article

Photoluminescence of strained-layer superlatticesKATO, H; NAKAYAMA, M; CHIKA, S et al.Solid state communications. 1984, Vol 52, Num 5, pp 559-561, issn 0038-1098Article

Improved AlGaAs/GaAs HBT performance by InGaAs emitter cap layerNAGATA, K; NAKAJIMA, O; NITTONO, T et al.Electronics Letters. 1987, Vol 23, Num 11, pp 566-568, issn 0013-5194Article

Photoluminescence in AlGaAs/GaAs heterojunction bipolar transistorsEDA, K; INADA, M.Journal of applied physics. 1987, Vol 62, Num 10, pp 4236-4243, issn 0021-8979Article

Process optimization for high efficiency thin graded band gap window GaAs and GaAPAs solar cellsMAYET, L; GAVAND, M; MONTEGU, B et al.Photovoltaic specialists conference. 19. 1987, pp 98-101Conference Paper

Verification of the charge-control model for GaAlAs/GaAs heterojunction bipolar transistorsTASSELLI, J; MARTY, A; BAILBE, J. P et al.Solid-state electronics. 1986, Vol 29, Num 9, pp 919-923, issn 0038-1101Article

Electron subband structure in selectively doped n-Al_xGa_1-xAs/GaAs heterostructuresSCHUBERT, E. F; PLOOG, K.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 9, pp 1868-1873, issn 0018-9383Article

Vertical electron transistor (VET) in GaAs with a heterojunction (AlGaAs-GaAs) cathodeMISHRA, U; MAKI, P. A; WENDT, J. R et al.Electronics Letters. 1984, Vol 20, Num 3, pp 145-146, issn 0013-5194Article

Quasi-one-dimensional ballistic electron transport in in-plane-gated channels at liquid nitrogen temperatureDE VRIES, D. K; PLOOG, K; WIECK, A. D et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 701-703, issn 0038-1101Conference Paper

High-performance P-n-p AlGaAs/GaAs heterojunction bipolar transistors: a theoretical analysisHUTCHBY, J. A.IEEE electron device letters. 1986, Vol 7, Num 2, pp 108-111, issn 0741-3106Article

Resonant polarons in a GaAs-GaAlAs heterostructureHORST, M; MERKT, U; ZAWADZKI, W et al.Solid state communications. 1985, Vol 53, Num 4, pp 403-405, issn 0038-1098Article

#7B-F.é.m. de déformation dynamique d'une hétérojonction AlxGa1-xAs ― GaAsBARTASHEVICH, Z. N; POZHELA, YU. K; FILIPAVICHYUS, V. S et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 2, pp 289-294, issn 0015-3222Article

Fermi sea shake-up in quantum well luminescence spectraSKOLNICK, M. S; NASH, K. J; BASS, S. J et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 825-829, issn 0038-1101Conference Paper

Pseudomorphic InGaAs-GaAsP quantum well modulators on GaAsCUNNINGHAM, J. E; GOOSSEN, K. W; WILIAMS, M et al.Applied physics letters. 1992, Vol 60, Num 6, pp 727-729, issn 0003-6951Article

Dry etching of GaAs, AlGaAs, and GaSb in hydrochlorofluorocarbon mixturesPEARTON, S. J; HOBSON, W. S; CHAKRABARTI, U. K et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 12, pp 3892-3899, issn 0013-4651Article