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AlGaAs/GaAs heterojunction bipolar transistor circuits with improved high-speed performanceCHANG, M. F; ASBECK, P. M; WANG, K. C et al.Electronics Letters. 1986, Vol 22, Num 22, pp 1173-1174, issn 0013-5194Article

An empirical pseudopotential analysis of (100) and (110) GaAs-AlxGa1-xAs heterojunctionsMARSH, A. C; INKSON, J. C.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 1, pp 43-52, issn 0022-3719Article

Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunctionKASTALSKY, A; HWANG, J. C. M.Solid state communications. 1984, Vol 51, Num 5, pp 317-322, issn 0038-1098Article

Landau-level broadening in GaAs/AlGaAs heterojunctionsANDO, T; MURAYAMA, Y.Journal of the Physical Society of Japan. 1985, Vol 54, Num 4, pp 1519-1527, issn 0031-9015Article

Luminescence propre et luminescence d'impureté dans les structures GaAs-AlGaAs à puits quantiquesALFEROV, ZH. I; KOP'EV, P. S; BER, B. YA et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 4, pp 715-721, issn 0015-3222Article

Three-terminal multilayer GaAs AlGas cascade cells with selective electrodesWAGNER, M; LEBURTON, J. P.IEEE photovoltaic specialists conference. 18. 1985, pp 1729-1730Conference Paper

Improvements in MBE grown AlxGa1-xAs/GaAs single quantum well structures resulting from dimeric arsenicFISCHER, R; SUN, Y. L; MASSELINK, W. T et al.Japanese journal of applied physics. 1984, Vol 23, Num 2, pp L126-L128, issn 0021-4922Article

Frequency-enhanced fractional quantisation in GaAs-GaAlAs heterojunctionsMCFADDEN, C; LONG, A. P; MYRON, H. W et al.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 17, pp L439-L444, issn 0022-3719Article

GaAs/AlGaAs heterostructure point-contact concentrator cellsGALE, R. P; ZAVRACKY, P. M; MCCLELLAND, R. W et al.Photovoltaic specialists conference. 19. 1987, pp 63-66Conference Paper

Spectres de photosensibilité des hétérostructures GaAs-GaAs-AlxGa1-xAsPOLYAKOV, V. I; PEROV, P. I; ERMAKOV, M. G et al.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 9, pp 1605-1612, issn 0015-3222Article

Analysis of polaron effects in the cyclotron resonance of n-GaAs and AlGaAs-GaAs heterojunctionsSIGG, H; WYDER, P; PERENBOOM, J. A. A. J et al.Physical review. B, Condensed matter. 1985, Vol 31, Num 8, pp 5253-5261, issn 0163-1829Article

Fabrication and characterization of AlGaAs/GaAS heterojunction bipolar transistorsITO, H; ISHIBASHI, T; SUGETA, T et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 2, pp 224-229, issn 0018-9383Article

Photoconductivity in selectively n- and p-doped AlxGa1-x/GaAs heterostructuresSCHUBERT, E. F; FISCHER, A; PLOOG, K et al.Solid-state electronics. 1986, Vol 29, Num 2, pp 173-180, issn 0038-1101Article

Improved AlGaAs/GaAs HBT performance by InGaAs emitter cap layerNAGATA, K; NAKAJIMA, O; NITTONO, T et al.Electronics Letters. 1987, Vol 23, Num 11, pp 566-568, issn 0013-5194Article

Photoluminescence in AlGaAs/GaAs heterojunction bipolar transistorsEDA, K; INADA, M.Journal of applied physics. 1987, Vol 62, Num 10, pp 4236-4243, issn 0021-8979Article

Process optimization for high efficiency thin graded band gap window GaAs and GaAPAs solar cellsMAYET, L; GAVAND, M; MONTEGU, B et al.Photovoltaic specialists conference. 19. 1987, pp 98-101Conference Paper

Verification of the charge-control model for GaAlAs/GaAs heterojunction bipolar transistorsTASSELLI, J; MARTY, A; BAILBE, J. P et al.Solid-state electronics. 1986, Vol 29, Num 9, pp 919-923, issn 0038-1101Article

Electron subband structure in selectively doped n-AlxGa1-xAs/GaAs heterostructuresSCHUBERT, E. F; PLOOG, K.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 9, pp 1868-1873, issn 0018-9383Article

Vertical electron transistor (VET) in GaAs with a heterojunction (AlGaAs-GaAs) cathodeMISHRA, U; MAKI, P. A; WENDT, J. R et al.Electronics Letters. 1984, Vol 20, Num 3, pp 145-146, issn 0013-5194Article

High-performance P-n-p AlGaAs/GaAs heterojunction bipolar transistors: a theoretical analysisHUTCHBY, J. A.IEEE electron device letters. 1986, Vol 7, Num 2, pp 108-111, issn 0741-3106Article

Resonant polarons in a GaAs-GaAlAs heterostructureHORST, M; MERKT, U; ZAWADZKI, W et al.Solid state communications. 1985, Vol 53, Num 4, pp 403-405, issn 0038-1098Article

#7B-F.é.m. de déformation dynamique d'une hétérojonction AlxGa1-xAs ― GaAsBARTASHEVICH, Z. N; POZHELA, YU. K; FILIPAVICHYUS, V. S et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 2, pp 289-294, issn 0015-3222Article

Stability of interfaces in pseudomorphic InGaAs HEMTsAUDREN, P; DUMAS, J. M; MOTTET, S et al.Quality and reliability engineering international. 1992, Vol 8, Num 3, pp 279-282, issn 0748-8017Article

Fabrication et caractérisation de photodiodes à avalanche à puits quantiques multiples GaAs/Al(x)Ga(1-x)As = Fabrication and characterisation of multiple quantum well GaAs/Al(x)Ga(1-x)As avalanche photodiodesAristin, Pascale; Portal, Jean-Claude.1992, 258 p.Thesis

Precise determination of turning mirror loss using GaAs/AlGaAs lasers with up to ten 90° intracavity turning mirrorsJOHNSON, J. E; TANG, C. L.IEEE photonics technology letters. 1992, Vol 4, Num 1, pp 24-26Article

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