InGaAs/InAlGaAs hot-electron transitors with current gain of 15IMAMURA, K; MUTO, S; FUJII, T et al.Electronics Letters. 1986, Vol 22, Num 21, pp 1148-1150, issn 0013-5194Article

Electroabsorption on room-temperature excitons in InGaAs/InGaAlAs multiple quantum-well structuresWAKITA, K; KAWAMURA, Y; YOSHIKUNI, Y et al.Electronics Letters. 1985, Vol 21, Num 8, pp 338-340, issn 0013-5194Article

SUPPRESSING AL AUTODIFFUSION IN IMPLANTATION AMORPHIZED AND RECRYSTALLIZED SILICON ON SAPPHIRE FILMSREEDY RE; SIGMON TW; CHRISTEL LA et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 707-709; BIBL. 7 REF.Article

CW LASER ACTIVATED FLOW APPLIED TO THE PLANARIZATION OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR STRUCTURESDELFINO M; REIFSTECK TA.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 715-717; BIBL. 6 REF.Article

Analysis of temperature sensitive operation in 1.6-μm In_0.53Ga_0.47As lasersTAKESHIMA, M.Journal of applied physics. 1984, Vol 56, Num 3, pp 691-695, issn 0021-8979Article

InP/GaInAs heterojunction bipolar transistors with improved electrical characteristics grown on strained buffer layersEMEIS, N; BENEKING, H.Electronics Letters. 1987, Vol 23, Num 6, pp 295-296, issn 0013-5194Article

Submicrometer self-aligned recessed gate InGaAs MISFET exhibiting very high transconductanceCHENG, C. L; LIAO, A. S. H; CHANG, T. Y et al.IEEE electron device letters. 1984, Vol 5, Num 5, pp 169-171, issn 0741-3106Article

Theory of thermal behavior of laser operation in InD20_.53Ga_0.47AsTAKESHIMA, M.Journal of applied physics. 1984, Vol 56, Num 1, pp 49-56, issn 0021-8979Article

Photoluminescence from In_0.53Ga₀.₄₇As/InP quantum wells grown by molecular beam epitaxyMARSH, J. H; ROBERTS, J. S; CLAXTON, P. A et al.Applied physics letters. 1985, Vol 46, Num 12, pp 1161-1163, issn 0003-6951Article

InGaAs/InP heterobipolar transistors for integration on semi-insulating InP substratesDÄMBKES, H; KÖNIG, U.Electronics Letters. 1984, Vol 20, Num 23, pp 955-957, issn 0013-5194Article

Photoluminescence of strained-layer superlatticesKATO, H; NAKAYAMA, M; CHIKA, S et al.Solid state communications. 1984, Vol 52, Num 5, pp 559-561, issn 0038-1098Article

Resonant-tunneling hot electron transistors (RHETs) using an InGaAs/In (AlGa) As heterostructureIMAMURA, K; MUTO, S.-I; YOKOYAMA, N et al.Fujitsu scientific and technical journal. 1988, Vol 24, Num 1, pp 54-59, issn 0016-2523Article

Performance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodesUTPAL DAS; YOUSEF ZEBDA; PALLAB BHATTACHARYA et al.Applied physics letters. 1987, Vol 51, Num 15, pp 1164-1166, issn 0003-6951Article

Conduction band edge discontinuity of In_0.52Ga_0.48As/In_0.52(Ga_1-xAl_x)_0.48As (0≤x≤1) heterostructuresSUGIYAMA, Y; INATA, T; FUJII, T et al.Japanese journal of applied physics. 1986, Vol 25, Num 8, pp L648-L650, issn 0021-4922, 2Article

Improvement of photoluminescence of molecular beam epitaxially grown Ga_xAl_yIn_1-x-y as by using an As₂ molecular beamTSANG, W. T; DITZENBERGER, J. A; OLSSON, N. A et al.IEEE electron device letters. 1983, Vol 4, Num 8, pp 275-277, issn 0741-3106Article

Effect of conduction-band discontinuity on lasing characteristics of 1.5 μm InGaAs/In(Ga)AlAs MQW-FP lasersWAKATSUKI, A; KAWAMURA, Y; NOGUCHI, Y et al.IEEE photonics technology letters. 1993, Vol 5, Num 4, pp 383-386, issn 1041-1135Article

Resonant-cavity InGaAIAs/InGaAs/InAIAs phototransistors with high gain for 1.3-1.6 μmANANTH DODABALAPUR; CHANG, T. Y.Applied physics letters. 1992, Vol 60, Num 8, pp 929-931, issn 0003-6951Article

Increased optical saturation intensities in GaInAs multiple quantum wells by the use of AlGaInAs barriersWOOD, T. H; CHANG, T. Y; PASTALAN, J. Z et al.Electronics Letters. 1991, Vol 27, Num 3, pp 257-259, issn 0013-5194Article

Novel etching technique for a buried heterostructure GaInAs/AIgaInAs quantum-well laser diodeKASUKAWA, A; BHAT, R; CANEAU, C et al.Applied physics letters. 1991, Vol 59, Num 11, pp 1269-1271, issn 0003-6951Article

Direct comparison of InGaAs/InGaAlAs and InGaAs/InGaAsP quantum well modulatorsHAWDON, B. J; TÜTKEN, T; HANGLEITER, A et al.Electronics Letters. 1993, Vol 29, Num 8, pp 705-707, issn 0013-5194Article

Growth and assessment of InGaAs/InGaAlAs/InP multiple quantum well lasersGLEW, R. W; GREENE, P. D; HANSHALL, G. D et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 784-789, issn 0022-0248Conference Paper

InGaAs/InGaAlAs/InAlAs/InP SCH-MQW laser diodes grown by molecular-beam epitaxyKAWAMURA, Y; ASAHI, H; WAKITA, K et al.Electronics Letters. 1984, Vol 20, Num 11, pp 459-460, issn 0013-5194Article

PLANAR INP/INGAAS-ADP WITH A GUARDRING FORMED BY CD DIFFUSION THROUGH SIO₂IKEDA M; WAKITA K; HATA S et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 2; PP. 61-62; BIBL. 7 REF.Article

PROTON AND DEUTERON BOMBARDED GA_0.47IN_0.53ASSTEEPLES K; DEARNALEY G; HARWELL AERE et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 703-705; BIBL. 7 REF.Article

Optical characterization of InGaAs/GaAs quantum dots defined by lateral top barrier modulationSCHMIDT, A; FORCHEL, A; FALLER, F et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1101-1103, issn 0038-1101Conference Paper