InGaAsP DC-PBH semiconductor laser diode frequency response modelAUGUSTO, A; DE SALLES, A.IEEE transactions on microwave theory and techniques. 1990, Vol 38, Num 5, pp 677-679, issn 0018-9480, 3 p.Article

Three-channel buried-crescent InGaAsP laser with 1•51 μm wavelength on semi-insulating InPKOREN, U; ARAI, S; TIEN, P. K et al.Electronics Letters. 1984, Vol 20, Num 4, pp 177-178, issn 0013-5194Article

Analysis of leakage currents in 1.3-μm InGaAsP real-index-guided lasersDUTTA, N. K; WILT, D. P; NELSON, R. J et al.Journal of lightwave technology. 1984, Vol 2, Num 3, pp 201-208, issn 0733-8724Article

Dependence of T₀ on P-cladding layer doping level in InGaAsP lasersCHEN, T. R; CHIU, L. C; YU, K. L et al.Japanese journal of applied physics. 1983, Vol 22, Num 9, pp L559-L561, issn 0021-4922Article

Photoluminescence investigation in N type InGaAsP heterostructureLIANG-HUI CHEN; MATTOS, J. C. V; PRINCE, F. C et al.Solid state communications. 1985, Vol 33, Num 5, pp 441-444, issn 0038-1098Article

High power output, low threshold, inner stripe GaInAsP laser diode on a p-type InP substrateIMANAKA, K; HORIKAWA, H; MATOBA, A et al.Applied physics letters. 1984, Vol 45, Num 3, pp 282-283, issn 0003-6951Article

InGaAsP/InP buried crescent laser diode emitting at 1.3 μm wavelengthOOMURA, E; HIGUCHI, H; SAKAKIBARA, Y et al.IEEE journal of quantum electronics. 1984, Vol 20, Num 8, pp 866-874, issn 0018-9197Article

Ultra-high-speed modulation of 1.3-μm InGaAsP diode lasersSU, C. B; LANZISERA, V. A.IEEE journal of quantum electronics. 1986, Vol 22, Num 9, pp 1568-1578, issn 0018-9197Article

Compensation of internal thermal stresses in InGaAsP/InP lasers for polarization stabilizationJIA-MING LIU; YING-CHIH CHEN.IEEE journal of quantum electronics. 1985, Vol 21, Num 3, pp 271-277, issn 0018-9197Article

Semi-insulator-embedded InGaAsP/InP flat-surface buried heterostructure laserTANAKA, K; HOSHINO, M; WAKAO, K et al.Applied physics letters. 1985, Vol 47, Num 11, pp 1127-1129, issn 0003-6951Article

The resonance frequency dependence on the doping level of 1.3-μm InGaAsP lasersCHIN BING SU; LANZISERA, V. A.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 11, pp 2190-2191, issn 0018-9383Article

Channelled-substrate buried heterostruture InGaAsP/InP lasers with vapor phase epitaxial base structure and liquid phase epitaxial regrowthWILT, D. P; KARLICEK, R. F; STREGE, K. E et al.Journal of applied physics. 1984, Vol 56, Num 3, pp 710-712, issn 0021-8979Article

GaInAsP/InP phase-adjusted distributed feedback lasers with a step-like nonuniform stripe width structureSODA, H; WAKAO, K; SUDO, H et al.Electronics Letters. 1984, Vol 20, Num 24, pp 1016-1018, issn 0013-5194Article

Temperature dependence of bistable InGaAsP/InP lasersHAI-FENG LIU; KAMIYA, T; BAO-XUN DU et al.IEEE journal of quantum electronics. 1986, Vol 22, Num 9, pp 1579-1586, issn 0018-9197Article

Caractéristiques calculées pour hétérostructures monomodes planes à base de GaInAsP/InP dans la gamme λ=1,06-1,67 μmZHURAVLEV, G. A; CHERNYJ, V. V.Radiotehnika i èlektronika. 1985, Vol 30, Num 12, pp 2429-2435, issn 0033-8494Article

Criterion for improved linearity of 1.3-μm InGaAsP-InP buried-heterostructure lasersDUTTA, N. K; NELSON, R. J; WRIGHT, P. D et al.Journal of lightwave technology. 1984, Vol 2, Num 2, pp 160-164, issn 0733-8724Article

InP/InGaAsP 1.5μ region etching cavity laserSUZUKI, Y; NOGUCHI, Y; NAGAI, H et al.Japanese journal of applied physics. 1984, Vol 23, Num 2, pp 268-269, issn 0021-4922, 1Article

Observation expérimentale d'effets de quantification dimensionnelle dans les hétérostructures laser à variations aléatoires d'épaisseur de la couche active quantifiée par la dimensionKIZHAEV, K. YU; KUCHINSKIJ, V. I; LAZUTKA, A. S et al.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 7, pp 1222-1226, issn 0015-3222Article

Quantitative evaluation of gain and losses in quaternary lasersMOZER, A. P; HAUSSER, S; PILKUHN, M. H et al.IEEE journal of quantum electronics. 1985, Vol 21, Num 6, pp 719-725, issn 0018-9197Article

High-frequency constricted mesa lasersBOWERS, J. L; HEMENWAY, B. R; GNAUCK, A. H et al.Applied physics letters. 1985, Vol 47, Num 2, pp 78-80, issn 0003-6951Article

Heteroepitaxial ridge-overgrown distributed feedback laser at 1.5υmTSANG, W. T; LOGAN, R. A; OLSSON, N. A et al.Applied physics letters. 1984, Vol 45, Num 12, pp 1272-1274, issn 0003-6951Article

Wavelength multiplexing of 1.31 μm InGaAsP buried crescent laser arraysVAN DER ZIEL, J. P; TEMKIN, H; LOGAN, R. A et al.Applied physics letters. 1983, Vol 43, Num 5, pp 401-403, issn 0003-6951Article

MEASUREMENT OF RADIATIVE RECOMBINATION COEFFICIENT AND CARRIER LEAKAGE IN 1.3 MU M INGAASP LASERS WITH LIGHTLY DOPED ACTIVE LAYERSSU CB; SCHLAFER J; MANNING J et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1108-1110; BIBL. 13 REF.Article

HIGH QUANTUM EFFICIENCY INGAASP/INP LASERSTAMARI N; ORON M; MILLER BI et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1025-1027; BIBL. 13 REF.Article

INTERNAL LASS OF INGAASP/INP BURIED CRESCENT (LAMBDA =1.3MU M) LASERHIGUCHI H; NAMIZAK; OOMURA E et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 320-321; BIBL. 10 REF.Article