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Comparison of trapping levels in GaAsP strained-layer superlattice structures and in their buffer layersBARNES, C. E; BIEFELD, R. M; ZIPPERIAN, T. E et al.Applied physics letters. 1984, Vol 45, Num 4, pp 408-410, issn 0003-6951Article

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Fabrication of green-emitting monolithic GaP light-emitting diode displays by laser-induced ablation and ion implantationKRIMMEL, E. F; LUTSCH, A. G. K; HOFFMANN, L et al.Journal of applied physics. 1984, Vol 55, Num 6, pp 1617-1618, issn 0021-8979, 1Article

Radiation effects on the metal-GaP interfaceBORKOVSKAYA, O. Y; DMITRUK, N. L; KONAKOVA, R. V et al.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp K129-K133, issn 0031-8965Article

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A study on GaP/Si heterostructures grown by GS-MBEYU, J.-Z; CHEN, B; YU, Z et al.SPIE proceedings series. 1998, pp 9-12, isbn 0-8194-3012-9Conference Paper

Rapid synthesis of GaP and GaAs from solid-state precursorsTREECE, R. E; MACALA, G. S; KANER, R. B et al.Chemistry of materials. 1992, Vol 4, Num 1, pp 9-11, issn 0897-4756Article

Radiation induced luminescence from dipoles immersed in a solid with a rough surfaceNKOMA, J. S.Physica status solidi. B. Basic research. 1989, Vol 153, Num 1, pp 383-389, issn 0370-1972, 7 p.Article

An inadvertent mid-gap electron level in liquid-phase-epitaxial GaPZAFAR IQBAL, M; JABBAR, A; BABER, N et al.Physica status solidi. A. Applied research. 1987, Vol 99, Num 1, pp K65-K68, issn 0031-8965Article

«0.75eV killer centre» in red-emitting GaP LEDsANWAR BUTT, M; ZAFAR IQBAL, M.Applied physics. A, Solids and surfaces. 1983, Vol 32, Num 4, pp 223-224, issn 0721-7250Article

Luminescence method for the determination of the current injection component in red GaAs_1-xP_x light-emitting diodesGLINCHUK, K. D; SUKACH, G. A.SPIE proceedings series. 1998, pp 250-254, isbn 0-8194-2808-6Conference Paper

Ultraviolet laser-induced low-temperature epitaxy of GaPSUDARSAN, U; CODY, N. W; DOSLUOGLU, T et al.Applied physics letters. 1989, Vol 55, Num 8, pp 738-740, issn 0003-6951, 3 p.Article

Caractéristique courant-tension dynamique des structures p-i-n+ en GaP<Fe> dans les conditions de strictionVORONIN, S. T; KRAVCHENKO, A. F; SHERSTYAKOV, A. P et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 4, pp 666-670, issn 0015-3222Article