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kw.\*:("Gallium Phosphure")

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Optical absorption spectra of magnesium-implanted GaPHÖRIG, W; BOUAMAMA, K; NEUMANN, H et al.Crystal research and technology (1979). 1990, Vol 25, Num 6, pp 677-681, issn 0232-1300Article

Comparison of trapping levels in GaAsP strained-layer superlattice structures and in their buffer layersBARNES, C. E; BIEFELD, R. M; ZIPPERIAN, T. E et al.Applied physics letters. 1984, Vol 45, Num 4, pp 408-410, issn 0003-6951Article

GaP-AlxGa1-xP heterostructure edge coupling waveguides for hybrid integrated optic devicesDIAZ, P; GONZALEZ, C.Crystal research and technology (1979). 1988, Vol 23, Num 6, pp 735-740, issn 0232-1300Article

Transformation des centres profonds dans le processus de dégradation de diodes luminescentes en GaP <N,Zn-O>TORCHINSKAYA, T. V; SHMATOV, A. A; STROCHKOV, V. I et al.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 4, pp 701-707, issn 0015-3222Article

Courant de thermoinjection non classique dans des structures p-n de GaPEVSTROPOV, V. V; KALININ, B. N; TSARENKOV, V. V et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 4, pp 599-606, issn 0015-3222Article

NEW ACTIVATION METHODS FOR LONG-LIFE AND HIGHLY STABLE GAP-GAALP HETEROJUNCTION COLD CATHODESKAN H; KATSUNO H; NAKAMURA T et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 6; PP. 3404-3408; BIBL. 16 REF.Article

Non-exponential dark capacitance transients from red-emitting GaP LED/s-Field and edge effects on the 0,75 eV centreKELLER, W. W.Applied physics. A, Solids and surfaces. 1987, Vol 42, Num 4, pp 301-302, issn 0721-7250Article

Fabrication of green-emitting monolithic GaP light-emitting diode displays by laser-induced ablation and ion implantationKRIMMEL, E. F; LUTSCH, A. G. K; HOFFMANN, L et al.Journal of applied physics. 1984, Vol 55, Num 6, pp 1617-1618, issn 0021-8979, 1Article

Radiation effects on the metal-GaP interfaceBORKOVSKAYA, O. Y; DMITRUK, N. L; KONAKOVA, R. V et al.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp K129-K133, issn 0031-8965Article

Heterojunction contact crystalline silicon thin-film solar cellsCULIK, J. S; FORD, D. H; BARNETT, A. M et al.Photovoltaic specialists conference. 19. 1987, pp 87-92Conference Paper

Optical properties of AlP-GaP short-period superlatticesMORII, A; TAKANO, T; KITAMURA, J et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 649-652, issn 0038-1101Conference Paper

EFFETS DU RAYONNEMENT DANS LA REGION VOISINE DE LA LIMITE DU PHOSPHURE DE GALLIUMBORKOVSKAYA O YU; DMITRUK NL; KONAKOVA RV et al.1982; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 6; PP. 1194-1199; BIBL. 21 REF.Article

PREFERENTIAL INTERACTION OF CHANNELLED PARTICLES IN DIATOMIC CRYSTALS.BONTEMPS A; FONTENILLE J; GUIVARC'H A et al.1976; PHYS. LETTERS, A; NETHERL.; DA. 1976; VOL. 55; NO 6; PP. 373-374; BIBL. 7 REF.Article

SUR LA PURIFICATION DU PHOSPHORE SIMULTANEE A LA SYNTHESE ET A LA CULTURE DES CRISTAUX LAMELLAIRE DE PHOSPHURE DE GALLIUMKISELEVA EH N; NIKOLAEV IV; DEM'YANOV EH A et al.1976; ZH. PRIKL. KHIM.,*O S.S.S.R.; DA. 1976; VOL. 49; NO 6; PP. 1199-1201; BIBL. 8 REF.Article

THE MEASUREMENT OF ANOMALOUS SCATTERING FACTORS NEAR THE GAK ABSORPTION EDGE IN GAP.FUKAMACHI T; HOSOYA S.1975; ACTA CRYSTALLOGR., A; DANEM.; DA. 1975; VOL. 31; NO 2; PP. 215-220; BIBL. 17 REF.Article

COMPORTEMENT DU TELLURE DANS GAP DANS LE PROCEDE DE FUSION DE ZONE HORIZONTALESHCHEGOLEVA VF; MARINA LI; NASHEL'SKIJ A YA et al.1974; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1974; VOL. 10; NO 8; PP. 1406-1408; BIBL. 5 REF.Article

BREVET 2.285.341 (A1) (7431524). A 18 SEPTEMBRE 1974. PROCEDE DE SYNTHESE DE PHOSPHURE DE GALLIUMsdPatent

CATHODOLUMINESCENCE DE GA1-XALXP NBESSOLOV VN; DOBRYNINA ES; PETROV VI et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 4; PP. 694-697; BIBL. 8 REF.Article

PHASE EQUILIBRIA IN THE GA-P SYSTEM. CALCULATION OF ACTIVITIES AND VAPOUR PRESSURES USING A SIMPLE ASYMMETRICAL SOLUTION MODELKNOBLOCH G.1975; KRISTALL U. TECH.; DTSCH.; DA. 1975; VOL. 10; NO NO 6; PP. 605-616; ABS. ALLEM.; BIBL. 25 REF.Article

SOLID COMPOSITION AND GALLIUM AND PHOSPHORUS VACANCY CONCENTRATION ISOBARS FOR GAP.JORDAN AS; CARUSO R; VON NEIDA AR et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 8; PP. 3472-3476; BIBL. 23 REF.Article

CINETIQUE DE LA CROISSANCE DES COUCHES EPITAXIQUES DE PHOSPHURE DE GALLIUM DANS LA ZONE DE RECRISTALLISATION A GRADIENT DE TEMPERATURELOZOVSKIJ VN; MAR'EV VB.1974; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1974; VOL. 17; NO 7; PP. 115-118; BIBL. 8 REF.Article

LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF 35 MM DIAMETER SINGLE CRYSTALS OF GAPNYGREN SF.1973; J. CRYST. GROWTH; NETHERL.; DA. 1973; VOL. 19; NO 1; PP. 21-32; BIBL. 16 REF.Serial Issue

ETUDE DE LA SURFACE (111) DE GAP PAR LES METHODES DE SPECTROSCOPIE AUGER ET DE DIFFRACTION D'ELECTRONS LENTSMITYAGIN A YU; ORLOV VP; CHEREVATSKIJ N YA et al.1973; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1973; VOL. 18; NO 2; PP. 423-424; BIBL. 3 REF.Serial Issue

EFFET PHOTO-EMISSIF ET REFLEXION PAR LES FACES POLAIRES (111) ET (111) DU CRISTAL GAP PRES DE L'EXTREMITE K D'ABSORPTION DU GALLIUMTAGIROV IR; SHCHEMELEV VN; ZAKHAROV BG et al.1982; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 4; PP. 815-818; BIBL. 15 REF.Article

CHROMIUM-INDUCED UP CONVERSION IN GAPCLERJAUD B; GENDRON F; PORTE C et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 4; PP. 212-214; BIBL. 13 REF.Article

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