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Electricity generation from thermal irradiation governed by GaSb active layerYU WANG; XINGWANG ZHANG; XIULAN ZHANG et al.Renewable energy. 2012, Vol 48, pp 231-237, issn 0960-1481, 7 p.Article

Optically pumped GaSb/Al0.6Ga0.4Sb multiquantum well lasers operating in the λ=1.5-1.6 μm regionTEMKIN, H; TSANG, W. T.Journal of applied physics. 1984, Vol 55, Num 5, pp 1413-1415, issn 0021-8979Article

Preparation of 1.78-μm wavelength Al0.2Ga0.8Sb/GaSb double-heterostructure lasers by molecular beam epitaxyTSANG, W. T; OLSSON, N. A.Applied physics letters. 1983, Vol 43, Num 1, pp 8-10, issn 0003-6951Article

High-speed modulation characteristics of a GaSb/AlGaSb multiquantum-well laser diodeTOBA, H; NOSU, K.Electronics Letters. 1987, Vol 23, Num 5, pp 188-190, issn 0013-5194Article

ELECTRICAL AND PHOTOELECTRICAL CHARACTERIZATION OF N-GAXAL1-XSB-PGASB HETEROJUNCTIONSHEN J; KITAMURA N; KAKEHI M et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 7; PART. 1; PP. 1053-1055; BIBL. 16 REF.Article

Observation of room temperature excitons in GaSb-AlGaSb multi-quantum wellsMIYAZAWA, T; TARUCHA, S; OHMORI, Y et al.Japanese journal of applied physics. 1986, Vol 25, Num 3, pp L200-L202, issn 0021-4922, 2Article

Room temperature operation of Al0.17Ga0.83Sb/GaSb multi-quantum well lasers grown by molecular beam epitaxyOHMORI, Y; TARUCHA, S; HORIKOSHI, Y et al.Japanese journal of applied physics. 1984, Vol 23, Num 2, pp L94-L96, issn 0021-4922Article

Oxidation study by Auger electron spectroscopy and electron energy-loss spectroscopy of GaSb (001) surfaces grown by molecular-beam epitaxyRAISIN, C; DA SILVA, F. W. O; LASSABATERE, L et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 1, pp 68-74, issn 0734-211X, 7 p.Article

Recombinaison Auger interbande dans des structures laser en GaSbGEL'MONT, B. L; SOKOLOVA, Z. N; KHALFIN, V. B et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 10, pp 1803-1807, issn 0015-3222Article

Study of Short- and Long-Term Effectiveness of Ammonium Sulfide as Surface Passivation for InAs/GaSb Superlattices Using X-Ray Photoelectron SpectroscopyBANERJEE, Koushik; GHOSH, Siddhartha; PLIS, Elena et al.Journal of electronic materials. 2010, Vol 39, Num 10, pp 2210-2214, issn 0361-5235, 5 p.Article

Préparation et étude de photodiodes diffusées P+N à Ga Al (As) Sb = Preparation and study of GaAl(As)Sb p+n diffused photodiodesBELATOUI, Tayeb.1985, 127 pThesis

Optical properties of GaSb/Ga0.69Al0.31Sb single quantum wells grown by molecular beam epitaxyDA SILVA, F. W. O; RAISIN, C; GAILLARD, S et al.Thin solid films. 1990, Vol 190, Num 1, pp 21-27, issn 0040-6090, 7 p.Article

Improved photoluminescence from electrochemically passivated GaSbSALESSE, A; ALABEDRA, R; CHEN, Y et al.Semiconductor science and technology. 1997, Vol 12, Num 4, pp 413-418, issn 0268-1242Article

Influence des dislocations sur la grandeur du courant inverse des jonctions p-n de solutions solides GaAs1-xSbxKARYAEV, V. N; SAVEL'EV, I. G.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 7, pp 1205-1210, issn 0015-3222Article

Recent investigations on the growth of antimony based semiconductorsBHAT, H. L.SPIE proceedings series. 1998, pp 221-227, isbn 0-8194-2756-X, 2VolConference Paper

2Eg transitions in GaSb-AlSb quantum-well structuresFORCHEL, A; CEBULLA, U; TRÄNKLE, G et al.Physical review letters. 1986, Vol 57, Num 25, pp 3217-3220, issn 0031-9007Article

Linear photogalvanic effect in p-type GaSb at infrared and submillimeter wavelengthsBEREGULIN, E. V; GANICHEV, S. D; GLUKH, K. YU et al.Physics of the solid state. 1993, Vol 35, Num 2, pp 238-239, issn 1063-7834Article

GaSb-, InGaAsSb-, InGaSb-, InAsSbP- and Ge-TPV cells with diffused emittersSULIMA, Oleg V; BETT, Andreas W; DUTTA, Partha S et al.sans titre. 2002, pp 892-895, isbn 0-7803-7471-1, 4 p.Conference Paper

Secondary ion mass spectrometry generates swelling of GaSb : depth resolution and secondary ion yieldsGAUNEAU, M; CHAPLAIN, R; RUPERT, A et al.Journal of applied physics. 1993, Vol 73, Num 5, pp 2051-2056, issn 0021-8979Article

Optoelectronic properties of gallium antimonide light emitting diodesKRIER, A; PARRY, M. K; LANCHESTER, D. S et al.Semiconductor science and technology. 1991, Vol 6, Num 11, pp 1066-1071, issn 0268-1242Article

Auger effect in GaSb quantum well lasersSUGIMURA, A; PATZAK, E; MEISSNER, P et al.IEEE journal of quantum electronics. 1985, Vol 21, Num 12, pp 1851-1853, issn 0018-9197Article

DIVERGENCE DUE A LA DIFFRACTION DU RAYONNEMENT DES LASERS HETEROGENES A INJECTION A BASE DE SOLUTIONS SOLIDES QUATERNAIRES, ISOPERIODIQUES AVEC GASBDRAKIN AE; ELISEEV PG; SVERDLOV BN et al.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 5; PP. 949-954; BIBL. 13 REF.Article

Infrared reflectivity of strained GaSb/AlSb superlatticesSCAMARCIO, G; GADALETA, C; TAGLIENTE, A et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 625-628, issn 0038-1101Conference Paper

Confinement in the GaSb-InAs (001) superlatticeGELL, M. A; WONG, K. B; NINNO, D et al.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 20, pp 3821-3843, issn 0022-3719Article

Compositional relation of GaAsxSb1-x and related compounds in metalorganic chemical vapor deposition using tBAs and TMSb as group V precursorsWATANABE, N; IWAMURA, Y.Japanese journal of applied physics. 1996, Vol 35, Num 1A, pp 16-21, issn 0021-4922, 1Article

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