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Oxidation study by Auger electron spectroscopy and electron energy-loss spectroscopy of GaSb (001) surfaces grown by molecular-beam epitaxyRAISIN, C; DA SILVA, F. W. O; LASSABATERE, L et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 1, pp 68-74, issn 0734-211X, 7 p.Article

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Recent investigations on the growth of antimony based semiconductorsBHAT, H. L.SPIE proceedings series. 1998, pp 221-227, isbn 0-8194-2756-X, 2VolConference Paper

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TEMPERATURE DEPENDENCE OF THE L₆^C-GAMMA ₆^C ENERGY GAP IN GALLIUM ANTIMONIDEJOULLIE A; ZEIN EDDIN A; GIRAULT B et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 2; PP. 928-930; BIBL. 39 REF.Article

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Light scattering determinations of band offsets in semiconductor heterostructuresMENENDEZ, J; PINCZUK, A.IEEE journal of quantum electronics. 1988, Vol 24, Num 8, pp 1698-1711, issn 0018-9197Article

Sur l'élaboration par jets moléculaires et les propriétés optiques d'hétérojonctions GaAlSb/GaSb = On elaboration by molecular beams and optical properties of GaAlSb/GaSb heterojunctionsRAISIN, C; BABAKOR SAGUINTAAH; TEGMOUSSE, H et al.Annales des télécommunications. 1986, Vol 41, Num 1-2, pp 50-58, issn 0003-4347Article

An improved LPE apparatus for the growth of GaSb and GaAlSb epitaxial layers for infrared photodiodesHEINZ, C; SCHMIDT AUF ALTENSTADT, W.Journal of crystal growth. 1984, Vol 67, Num 2, pp 393-396, issn 0022-0248Article

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