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kw.\*:("Gallium arsenides")

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An investigation of GaSb/GaAs thermophotovoltaic cellsFAP, Q; LIM, A. L. C; CONIBEER, G. J et al.sans titre. 2002, pp 951-954, isbn 0-7803-7471-1, 4 p.Conference Paper

HIGH-GAIN LOW-NOISE GAALAS-GAAS PHOTOTRANSISTORSSCAVENNEC A; ANKRI D; BESOMBES C et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 394-395; BIBL. 11 REF.Article

High-efficiency photocathodes on the NEA-GaAs basisANTONOVA, L. I; DENISSOV, V. P.Applied surface science. 1997, Vol 111, pp 237-240, issn 0169-4332Conference Paper

Criteria for the design of GaInP/GaAs/Ge triple-junction cells to optimize their performance outdoorsMCMAHON, W. E; KURTZ, Sarah; EMERY, K et al.sans titre. 2002, pp 931-934, isbn 0-7803-7471-1, 4 p.Conference Paper

Deep-level transient spectroscopy in InGaAsN lattice-matched to GaAsJOHNSTON, S. W; AHRENKIEL, R. K; FRIEDMAN, D. J et al.sans titre. 2002, pp 1023-1026, isbn 0-7803-7471-1, 4 p.Conference Paper

CAPACITANCE/VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) STRUCTURENAGAI K; HAYASHI Y; SEKIGAWA T et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 376-377; BIBL. 2 REF.Article

DETERMINATION OF MINORITY CARRIER LIFETIME AND EFFECTIVE BACK SURFACE RECOMBINATION VELOCITY IN BSF SILICON SOLAR CELLS FROM TRANSIENT MEASUREMENTSJAIN SC; AGARWAL SK; RAY UC et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 365-367; BIBL. 11 REF.Article

AlGaAs/GaAs heterojunction bipolar transistor circuits with improved high-speed performanceCHANG, M. F; ASBECK, P. M; WANG, K. C et al.Electronics Letters. 1986, Vol 22, Num 22, pp 1173-1174, issn 0013-5194Article

An empirical pseudopotential analysis of (100) and (110) GaAs-AlxGa1-xAs heterojunctionsMARSH, A. C; INKSON, J. C.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 1, pp 43-52, issn 0022-3719Article

Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunctionKASTALSKY, A; HWANG, J. C. M.Solid state communications. 1984, Vol 51, Num 5, pp 317-322, issn 0038-1098Article

P-GAAS/P-GA1-XALXAS ISOTYPE HETEROJUNCTIONS IN DOUBLE HETEROSTRUCTURE LASER MATERIALHAKKI BW.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6054-6058; BIBL. 28 REF.Article

Landau-level broadening in GaAs/AlGaAs heterojunctionsANDO, T; MURAYAMA, Y.Journal of the Physical Society of Japan. 1985, Vol 54, Num 4, pp 1519-1527, issn 0031-9015Article

Luminescence propre et luminescence d'impureté dans les structures GaAs-AlGaAs à puits quantiquesALFEROV, ZH. I; KOP'EV, P. S; BER, B. YA et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 4, pp 715-721, issn 0015-3222Article

Three-terminal multilayer GaAs AlGas cascade cells with selective electrodesWAGNER, M; LEBURTON, J. P.IEEE photovoltaic specialists conference. 18. 1985, pp 1729-1730Conference Paper

Improvements in MBE grown AlxGa1-xAs/GaAs single quantum well structures resulting from dimeric arsenicFISCHER, R; SUN, Y. L; MASSELINK, W. T et al.Japanese journal of applied physics. 1984, Vol 23, Num 2, pp L126-L128, issn 0021-4922Article

Frequency-enhanced fractional quantisation in GaAs-GaAlAs heterojunctionsMCFADDEN, C; LONG, A. P; MYRON, H. W et al.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 17, pp L439-L444, issn 0022-3719Article

Fabrication and characterization of AlGaAs/GaAS heterojunction bipolar transistorsITO, H; ISHIBASHI, T; SUGETA, T et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 2, pp 224-229, issn 0018-9383Article

Photoconductivity in selectively n- and p-doped AlxGa1-x/GaAs heterostructuresSCHUBERT, E. F; FISCHER, A; PLOOG, K et al.Solid-state electronics. 1986, Vol 29, Num 2, pp 173-180, issn 0038-1101Article

GAIN SUPPRESSION IN GAAS/ALGAAS TJS LASERSKAWANISHI H; PETERSEN PE.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 6; PP. 823-824; BIBL. 8 REF.Article

Improved AlGaAs/GaAs HBT performance by InGaAs emitter cap layerNAGATA, K; NAKAJIMA, O; NITTONO, T et al.Electronics Letters. 1987, Vol 23, Num 11, pp 566-568, issn 0013-5194Article

Photoluminescence in AlGaAs/GaAs heterojunction bipolar transistorsEDA, K; INADA, M.Journal of applied physics. 1987, Vol 62, Num 10, pp 4236-4243, issn 0021-8979Article

Process optimization for high efficiency thin graded band gap window GaAs and GaAPAs solar cellsMAYET, L; GAVAND, M; MONTEGU, B et al.Photovoltaic specialists conference. 19. 1987, pp 98-101Conference Paper

Verification of the charge-control model for GaAlAs/GaAs heterojunction bipolar transistorsTASSELLI, J; MARTY, A; BAILBE, J. P et al.Solid-state electronics. 1986, Vol 29, Num 9, pp 919-923, issn 0038-1101Article

Electron subband structure in selectively doped n-AlxGa1-xAs/GaAs heterostructuresSCHUBERT, E. F; PLOOG, K.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 9, pp 1868-1873, issn 0018-9383Article

Vertical electron transistor (VET) in GaAs with a heterojunction (AlGaAs-GaAs) cathodeMISHRA, U; MAKI, P. A; WENDT, J. R et al.Electronics Letters. 1984, Vol 20, Num 3, pp 145-146, issn 0013-5194Article

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