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Solution-based functionalization of gallium nitride nanowires for protein sensor developmentWILLIAMS, Elissa H; DAVYDOV, Albert V; OLESHKO, Vladimir P et al.Surface science. 2014, Vol 627, pp 23-28, issn 0039-6028, 6 p.Article

Initial stages of the adsorption of Sc and ScN thin films on GaN(0001): First principles calculationsGUERRERO-SANCHEZ, J; COCOLETZI, Gregorio H; RIVAS-SILVA, J. F et al.Applied surface science. 2013, Vol 268, pp 16-21, issn 0169-4332, 6 p.Article

Nanoindentation characterization of GaN epilayers on A-plane sapphire substratesLIN, Meng-Hung; WEN, Hua-Chiang; HUANG, Chih-Yung et al.Applied surface science. 2010, Vol 256, Num 11, pp 3464-3467, issn 0169-4332, 4 p.Article

History of Gallium―Nitride-Based Light-Emitting Diodes for IlluminationNAKAMURA, Shuji; KRAMES, Michael R.Proceedings of the IEEE. 2013, Vol 101, Num 10, pp 2211-2220, issn 0018-9219, 10 p.Article

Olefin metathesis reaction on GaN (0 0 01 ) surfacesMAKOWSKI, Matthew S; ZEMLYANOV, Dmitry Y; IVANISEVIC, Albena et al.Applied surface science. 2011, Vol 257, Num 10, pp 4625-4632, issn 0169-4332, 8 p.Article

Analyses of GaN (0001) and (0001) surfaces by highly-charged ionsMOTOHASHI, K; HOSOYA, K; IMANO, M et al.Surface science. 2007, Vol 601, Num 22, pp 5304-5308, issn 0039-6028, 5 p.Conference Paper

Effect of annealing on Ni/GaN(0001) contact morphologyGRODZICKI, M; MAZUR, P; ZUBER, S et al.Applied surface science. 2014, Vol 304, pp 24-28, issn 0169-4332, 5 p.Conference Paper

Covalent attachment of a peptide to the surface of gallium nitrideMAKOWSKI, Matthew S; ZEMLYANOV, Dmitry Y; CANTER, Jamie M et al.Surface science. 2011, Vol 605, Num 15-16, pp 1466-1475, issn 0039-6028, 10 p.Article

Formation of amine groups on the surface of GaN: A method for direct biofunctionalizationSTINE, R; SIMPKINS, B. S; MULVANEY, S. P et al.Applied surface science. 2010, Vol 256, Num 13, pp 4171-4175, issn 0169-4332, 5 p.Article

Fabrication of microchannels in single-crystal GaN by wet-chemical-assisted femtosecond-laser ablationNAKASHIMA, Seisuke; SUGIOKA, Koji; MIDORIKAWA, Katsumi et al.Applied surface science. 2009, Vol 255, Num 24, pp 9770-9774, issn 0169-4332, 5 p.Conference Paper

High-fluence hyperthermal ion irradiation of gallium nitride surfaces at elevated temperaturesFINZEL, A; GERLACH, J. W; LORBEER, J et al.Applied surface science. 2014, Vol 317, pp 811-817, issn 0169-4332, 7 p.Article

Dissociative adsorption of ammonia on the ZrB2(0001) surfaceMANANDHAR, Kedar; WALKOSZ, Weronika; TRENARY, Michael et al.Surface science. 2013, Vol 615, pp 110-118, issn 0039-6028, 9 p.Article

Modulated optical properties of nonpolar gallium nitride via surface in-situ functionalization with cysteamine assisted phosphoric acidWILKINS, Stewart J; PASKOVA, Tania; IVANISEVIC, Albena et al.Applied surface science. 2014, Vol 295, pp 207-213, issn 0169-4332, 7 p.Article

Polymer/porous GaN bulk heterojunction and its optoelectronic propertyHU, Li-Feng; WANG, Feng-Xia; DENG, Feng-Xiang et al.Applied surface science. 2014, Vol 314, pp 464-467, issn 0169-4332, 4 p.Article

Gallium nitride electronicsRAJAN, Siddharth; JENA, Debdeep.Semiconductor science and technology. 2013, Vol 28, Num 7, issn 0268-1242, [249 p.]Serial Issue

Aqueous Stability of Ga- and N-Polar Gallium NitrideFOSTER, Corey M; COLLAZO, Ramon; SITAR, Zlatko et al.Langmuir. 2013, Vol 29, Num 1, pp 216-220, issn 0743-7463, 5 p.Article

Gallium nitride materials and devices VI (24-27 January 2011, San Francisco, California, United States)Chyi, Jen-Inn.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7939, issn 0277-786X, isbn 978-0-8194-8476-5, 1 vol, isbn 978-0-8194-8476-5Conference Proceedings

Gallium nitride materials and devices V (25-28 January 2010, San Francisco, California, United States)Chyi, Jen-Inn.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, various pagings, isbn 0-8194-7998-5 978-0-8194-7998-3Conference Proceedings

Growth of high quality cubic GaN on (001) GaAs by Halide VPE with back side bufferHASEGAWA, F; TSUCHIYA, H; SUNABA, K et al.SPIE proceedings series. 1998, pp 20-26, isbn 0-8194-2873-6Conference Paper

Influence of doping level on shift of the absorption edge of gallium nitride films (Burstein-Moss effect)SVITASHEVA, S. N; GILINSKY, A. M.Applied surface science. 2013, Vol 281, pp 109-112, issn 0169-4332, 4 p.Conference Paper

Microstructure and micro-Raman studies of nitridation and structure transition of gallium oxide nanowiresNING, J. Q; XU, S. J; WANG, P. W et al.Materials characterization. 2012, Vol 73, pp 153-157, issn 1044-5803, 5 p.Article

HEAT CAPACITY OF CRYSTALLINE GaNZIEBORAK-TOMASZKIEWICZ, Iwona; UTZIG, Ewa; GIERYCZ, P et al.Journal of thermal analysis and calorimetry. 2008, Vol 91, Num 1, pp 329-332, issn 1388-6150, 4 p.Article

Promising composite die-bonding materials for high-power GaN-based LED applicationsHORNG, Ray-Hua; HONG, Jhih-Sin; TSAI, Yu-Li et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76021E.1-76021E.9Conference Paper

Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction techniqueZHANG, C. G; CHEN, W. D; BIAN, L. F et al.Applied surface science. 2006, Vol 252, Num 6, pp 2153-2158, issn 0169-4332, 6 p.Article

Formation of VNH and MgVNH in p-type GaN(Mg,H)WRIGHT, A. F; MYERS, S. M; SANATI, M et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 477-481, issn 0921-4526, 5 p.Conference Paper

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