Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Gallium nitrides")

Filter

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 11140

  • Page / 446
Export

Selection :

  • and

Gallium nitride materials and devices V (25-28 January 2010, San Francisco, California, United States)Chyi, Jen-Inn.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, various pagings, isbn 0-8194-7998-5 978-0-8194-7998-3Conference Proceedings

Solution-based functionalization of gallium nitride nanowires for protein sensor developmentWILLIAMS, Elissa H; DAVYDOV, Albert V; OLESHKO, Vladimir P et al.Surface science. 2014, Vol 627, pp 23-28, issn 0039-6028, 6 p.Article

Ab initio study of structural properties for zincblende AlInN: Comparison of LDA and GGALIOU, Bo-Ting; WU, Bang-Yenn.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76021W.1-76021W.8Conference Paper

Quantitative image reconstruction of GaN quantum dots from oversampled diffraction intensities aloneJIANWEI MIAO; NISHINO, Yoshinori; KOHMURA, Yoshiki et al.Physical review letters. 2005, Vol 95, Num 8, issn 0031-9007, 085503-1-085503-4Article

Growth of high quality cubic GaN on (001) GaAs by Halide VPE with back side bufferHASEGAWA, F; TSUCHIYA, H; SUNABA, K et al.SPIE proceedings series. 1998, pp 20-26, isbn 0-8194-2873-6Conference Paper

Promising composite die-bonding materials for high-power GaN-based LED applicationsHORNG, Ray-Hua; HONG, Jhih-Sin; TSAI, Yu-Li et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76021E.1-76021E.9Conference Paper

Magnetic Cages of GaN Nanoclusters Doped with Gd and NdKUMAR, Vijay; ZAVADA, John M.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76020E.1-76020E.7Conference Paper

Growth of self-standing GaN substratesLEE, Hyun-Jae; FUJII, Katsushi; GOTO, Takenari et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 760202.1-760202.8Conference Paper

Ammonothermal growth of GaN substratesDWILIVSKI, R; DORADZINSKI, R; GARCZYNSKI, J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76020C.1-76020C.10Conference Paper

GaN thin film fabrication by reaction of laser evaporated Ga and GaAs in NH3 atmosphereDI PALMA, T. M; TEGHIL, R; MAROTTA, V et al.Applied surface science. 1998, Vol 127-29, pp 350-354, issn 0169-4332Conference Paper

Highly reliable blue-violet inner stripe laser diodes using planar regrowth of AlGaN/GaN superlattice cladding layerFUKUDA, K; KOHMOTO, S; MATSUDATE, M et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 6, pp 2094-2097, issn 1862-6300, 4 p.Conference Paper

Analytical Calculation of the Quantum 1/f Coherence Parameter for HFETsHANDEL, Peter H; SHERIF, Taher S.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76020N.1-76020N.7Conference Paper

Crystallographic polarity and crystallinity characterization of polar and nonpolar GaN epitaxial films by X-ray diffraction analysesINABA, Katsuhiko; AMANO, Hiroshi.Physica status solidi. B. Basic research. 2007, Vol 244, Num 6, pp 1775-1779, issn 0370-1972, 5 p.Conference Paper

Momentum selectivity and anisotropy effects in the nitrogen K-edge resonant inelastic x-ray scattering from GaNSTROCOV, V. N; SCHMITT, T; RUBENSSON, J.-E et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 8, pp 085221.1-085221.9, issn 1098-0121Article

Initial stages of the adsorption of Sc and ScN thin films on GaN(0001): First principles calculationsGUERRERO-SANCHEZ, J; COCOLETZI, Gregorio H; RIVAS-SILVA, J. F et al.Applied surface science. 2013, Vol 268, pp 16-21, issn 0169-4332, 6 p.Article

Nanoindentation characterization of GaN epilayers on A-plane sapphire substratesLIN, Meng-Hung; WEN, Hua-Chiang; HUANG, Chih-Yung et al.Applied surface science. 2010, Vol 256, Num 11, pp 3464-3467, issn 0169-4332, 4 p.Article

HEAT CAPACITY OF CRYSTALLINE GaNZIEBORAK-TOMASZKIEWICZ, Iwona; UTZIG, Ewa; GIERYCZ, P et al.Journal of thermal analysis and calorimetry. 2008, Vol 91, Num 1, pp 329-332, issn 1388-6150, 4 p.Article

Investigation of phonon-assisted photoluminescence in wurtzite GaN epilayerWEI LIU; LI, M. F; XU, S.-J et al.SPIE proceedings series. 1998, pp 27-34, isbn 0-8194-2873-6Conference Paper

Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction techniqueZHANG, C. G; CHEN, W. D; BIAN, L. F et al.Applied surface science. 2006, Vol 252, Num 6, pp 2153-2158, issn 0169-4332, 6 p.Article

Effect of annealing on Ni/GaN(0001) contact morphologyGRODZICKI, M; MAZUR, P; ZUBER, S et al.Applied surface science. 2014, Vol 304, pp 24-28, issn 0169-4332, 5 p.Conference Paper

Covalent attachment of a peptide to the surface of gallium nitrideMAKOWSKI, Matthew S; ZEMLYANOV, Dmitry Y; CANTER, Jamie M et al.Surface science. 2011, Vol 605, Num 15-16, pp 1466-1475, issn 0039-6028, 10 p.Article

Formation of amine groups on the surface of GaN: A method for direct biofunctionalizationSTINE, R; SIMPKINS, B. S; MULVANEY, S. P et al.Applied surface science. 2010, Vol 256, Num 13, pp 4171-4175, issn 0169-4332, 5 p.Article

Fabrication of microchannels in single-crystal GaN by wet-chemical-assisted femtosecond-laser ablationNAKASHIMA, Seisuke; SUGIOKA, Koji; MIDORIKAWA, Katsumi et al.Applied surface science. 2009, Vol 255, Num 24, pp 9770-9774, issn 0169-4332, 5 p.Conference Paper

Formation of VNH and MgVNH in p-type GaN(Mg,H)WRIGHT, A. F; MYERS, S. M; SANATI, M et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 477-481, issn 0921-4526, 5 p.Conference Paper

Are cubic nitrides viable materials for optoelectronic devices ?MÜLLHÄUSER, J. R; KLANN, R; YANG, H et al.SPIE proceedings series. 1998, pp 38-47, isbn 0-8194-2718-7Conference Paper

  • Page / 446