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Highly reliable blue-violet inner stripe laser diodes using planar regrowth of AlGaN/GaN superlattice cladding layerFUKUDA, K; KOHMOTO, S; MATSUDATE, M et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 6, pp 2094-2097, issn 1862-6300, 4 p.Conference Paper

Analytical Calculation of the Quantum 1/f Coherence Parameter for HFETsHANDEL, Peter H; SHERIF, Taher S.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76020N.1-76020N.7Conference Paper

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Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction techniqueZHANG, C. G; CHEN, W. D; BIAN, L. F et al.Applied surface science. 2006, Vol 252, Num 6, pp 2153-2158, issn 0169-4332, 6 p.Article

Effect of annealing on Ni/GaN(0001) contact morphologyGRODZICKI, M; MAZUR, P; ZUBER, S et al.Applied surface science. 2014, Vol 304, pp 24-28, issn 0169-4332, 5 p.Conference Paper

Covalent attachment of a peptide to the surface of gallium nitrideMAKOWSKI, Matthew S; ZEMLYANOV, Dmitry Y; CANTER, Jamie M et al.Surface science. 2011, Vol 605, Num 15-16, pp 1466-1475, issn 0039-6028, 10 p.Article

Formation of amine groups on the surface of GaN: A method for direct biofunctionalizationSTINE, R; SIMPKINS, B. S; MULVANEY, S. P et al.Applied surface science. 2010, Vol 256, Num 13, pp 4171-4175, issn 0169-4332, 5 p.Article

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Formation of V_NH and MgV_NH in p-type GaN(Mg,H)WRIGHT, A. F; MYERS, S. M; SANATI, M et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 477-481, issn 0921-4526, 5 p.Conference Paper

Growth shape control of group-III nitrides by selective area MOVPEKOBAYASHI, N; AKASAKA, T; ANDO, S et al.SPIE proceedings series. 1998, pp 2-6, isbn 0-8194-2873-6Conference Paper

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High-fluence hyperthermal ion irradiation of gallium nitride surfaces at elevated temperaturesFINZEL, A; GERLACH, J. W; LORBEER, J et al.Applied surface science. 2014, Vol 317, pp 811-817, issn 0169-4332, 7 p.Article

Polymer/porous GaN bulk heterojunction and its optoelectronic propertyHU, Li-Feng; WANG, Feng-Xia; DENG, Feng-Xiang et al.Applied surface science. 2014, Vol 314, pp 464-467, issn 0169-4332, 4 p.Article

Dissociative adsorption of ammonia on the ZrB₂(0001) surfaceMANANDHAR, Kedar; WALKOSZ, Weronika; TRENARY, Michael et al.Surface science. 2013, Vol 615, pp 110-118, issn 0039-6028, 9 p.Article

Aqueous Stability of Ga- and N-Polar Gallium NitrideFOSTER, Corey M; COLLAZO, Ramon; SITAR, Zlatko et al.Langmuir. 2013, Vol 29, Num 1, pp 216-220, issn 0743-7463, 5 p.Article

Gallium nitride materials and devices VI (24-27 January 2011, San Francisco, California, United States)Chyi, Jen-Inn.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7939, issn 0277-786X, isbn 978-0-8194-8476-5, 1 vol, isbn 978-0-8194-8476-5Conference Proceedings