kw.\*:("Gallium nitrure")
Results 1 to 25 of 5033
Selection :
Gallium nitride materials and devices V (25-28 January 2010, San Francisco, California, United States)Chyi, Jen-Inn.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, various pagings, isbn 0-8194-7998-5 978-0-8194-7998-3Conference Proceedings
Quantitative image reconstruction of GaN quantum dots from oversampled diffraction intensities aloneJIANWEI MIAO; NISHINO, Yoshinori; KOHMURA, Yoshiki et al.Physical review letters. 2005, Vol 95, Num 8, issn 0031-9007, 085503-1-085503-4Article
Promising composite die-bonding materials for high-power GaN-based LED applicationsHORNG, Ray-Hua; HONG, Jhih-Sin; TSAI, Yu-Li et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76021E.1-76021E.9Conference Paper
Growth of self-standing GaN substratesLEE, Hyun-Jae; FUJII, Katsushi; GOTO, Takenari et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 760202.1-760202.8Conference Paper
GaN thin film fabrication by reaction of laser evaporated Ga and GaAs in NH3 atmosphereDI PALMA, T. M; TEGHIL, R; MAROTTA, V et al.Applied surface science. 1998, Vol 127-29, pp 350-354, issn 0169-4332Conference Paper
Highly reliable blue-violet inner stripe laser diodes using planar regrowth of AlGaN/GaN superlattice cladding layerFUKUDA, K; KOHMOTO, S; MATSUDATE, M et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 6, pp 2094-2097, issn 1862-6300, 4 p.Conference Paper
Analytical Calculation of the Quantum 1/f Coherence Parameter for HFETsHANDEL, Peter H; SHERIF, Taher S.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76020N.1-76020N.7Conference Paper
Momentum selectivity and anisotropy effects in the nitrogen K-edge resonant inelastic x-ray scattering from GaNSTROCOV, V. N; SCHMITT, T; RUBENSSON, J.-E et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 8, pp 085221.1-085221.9, issn 1098-0121Article
Investigation of phonon-assisted photoluminescence in wurtzite GaN epilayerWEI LIU; LI, M. F; XU, S.-J et al.SPIE proceedings series. 1998, pp 27-34, isbn 0-8194-2873-6Conference Paper
ON THE THERMAL DECOMPOSITION OF GAN IN VACUUMGROH R; GEREY G; BARTHA L et al.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 26; NO 1; PP. 353-357; ABS. ALLEM.; BIBL. 5 REF.Article
THERMAL EXPANSION OF GAN.EJDER E.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 23; NO 1; PP. K87-K90; BIBL. 18 REF.Article
Growth shape control of group-III nitrides by selective area MOVPEKOBAYASHI, N; AKASAKA, T; ANDO, S et al.SPIE proceedings series. 1998, pp 2-6, isbn 0-8194-2873-6Conference Paper
Yellow photoluminescence in MOCVD-grown n-type GaNSCHUBERT, E. F; GRIESHABER, W; BOUTROS, K. S et al.SPIE proceedings series. 1998, pp 59-68, isbn 0-8194-2718-7Conference Paper
ANALYSE THERMODYNAMIQUE DES METHODES D'OBTENTION DE GANCHETNOV VP; MALKOVA AS; PASHINKIN AS et al.1979; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; SUN; DA. 1979; VOL. 15; NO 3; PP. 462-465; BIBL. 11 REF.Article
Development of high-power UV LEDs for epoxy curing applicationsLIU, W. H; CHU, C. F; CHEN, Y. W et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76021K.1-76021K.7Conference Paper
The energy of tilt grain boundaries around (0001) in GaNJUN CHEN; RUTERANA, P; NOUET, G et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 2, pp 247-258, issn 0031-8965, 12 p.Article
Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor depositionMACHT, L; WEYHER, J. L; GRZEGORCZYK, A et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 7, pp 073309.1-073309.4, issn 1098-0121Article
Deformation profile in GaN quantum dots : Medium-energy ion scattering experiments and theoretical calculationsJALABERT, D; CORAUX, J; GARCIA-CRISTOBAL, A et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 11, pp 115301.1-115301.5, issn 1098-0121Article
Micro-raman characterization of InxGa1-xN/GaN/Al2O3 heterostructuresKONTOS, A. G; RAPTIS, Y. S; PELEKANOS, N. T et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 15, pp 155336.1-155336.10, issn 1098-0121Article
Dot pattern epitaxial lateral overgrowth of GaN by hydride vapor phase epitaxyLIU, W. Y; TSAY, J. D; GUO, Y. D et al.Proceedings - Electrochemical Society. 2005, pp 289-295, issn 0161-6374, isbn 1-56677-462-4, 7 p.Conference Paper
Nonuniformities in free-standing GaN substratesKIM, H. M; OH, J. E; KANG, T. W et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 79, Num 1, pp 16-19, issn 0921-5107Article
Conference on Doping Issues in Wide Band-Gap SemiconductorsFALL, C. J; JONES, R.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 40, issn 0953-8984, 164 p.Conference Proceedings
Effects of gamma-ray irradiation on the microstructural and luminescent properties of radio-frequency-magnetron-sputtered GaN thin filmsWANG, Ching-Wu; SOONG, Bo-Shao; TSENG, Chung-Tung et al.SPIE proceedings series. 2000, pp 66-73, isbn 0-8194-3717-4Conference Paper
Ga-terminated β-GaN(001) surface reconstructions studied by scanning tunneling microscopyWASSERMEIER, M; YANG, H; BRANDT, O et al.Applied surface science. 1998, Vol 123-24, pp 181-186, issn 0169-4332Conference Paper
Room-temperature blue gallium nitride laser diodeFASOL, G.Science (Washington, D.C.). 1996, Vol 272, Num 5269, pp 1751-1752, issn 0036-8075Article