On the extension of ET-FDSOI roadmap for 22 nm node and beyondSAMPEDRO, C; GAMIZ, F; GODOY, A et al.Solid-state electronics. 2013, Vol 90, pp 23-27, issn 0038-1101, 5 p.Conference Paper

Monte Carlo simulation of Hall and magnetoresistance mobility in SOI devicesDONETTI, L; GAMIZ, F; CRISTOLOVEANU, S et al.Solid-state electronics. 2007, Vol 51, Num 9, pp 1216-1220, issn 0038-1101, 5 p.Article

Electron mobility and magneto transport study of ultra-thin channel double-gate Si MOSFETsPRUNNILA, M; AHOPELTO, J; GAMIZ, F et al.Solid-state electronics. 2005, Vol 49, Num 9, pp 1516-1521, issn 0038-1101, 6 p.Article

A Simple Approach to Quantum Confinement in Tunneling Field-Effect TransistorsPADILLA, J. L; GAMIZ, F; GODOY, A et al.IEEE electron device letters. 2012, Vol 33, Num 10, pp 1342-1344, issn 0741-3106, 3 p.Article

Advanced SOI MOSFETs : structures and device physicsFAYNOT, O; VANDOOREN, A; GIFFARD, B et al.Proceedings - Electrochemical Society. 2005, pp 1-10, issn 0161-6374, isbn 1-56677-461-6, 10 p.Conference Paper

Nanoscale SOI mosfets : In search for the best geometryJINGBIN LI; WALLS, Thomas J; LIKHAREV, Konstantin K et al.Proceedings - Electrochemical Society. 2005, pp 11-20, issn 0161-6374, isbn 1-56677-461-6, 10 p.Conference Paper

Calibration of numerical simulation tools for fine eometry SOI CMJOSLONG, Rathnait; DUANE, Russell; MATHEWSON, Alan et al.Proceedings - Electrochemical Society. 2005, pp 27-32, issn 0161-6374, isbn 1-56677-461-6, 6 p.Conference Paper

Process-induced distortion of silicon-on-insulator wafersRILEY, Paul E; MANCHESTER, Terry; ANG, Boon-Yong et al.Proceedings - Electrochemical Society. 2005, pp 131-136, issn 0161-6374, isbn 1-56677-461-6, 6 p.Conference Paper

Is SOI CMOS a promising technology for socs in high frequency range ?RAYNAUD, C; GIANESELLO, F; LABOUREY, G et al.Proceedings - Electrochemical Society. 2005, pp 331-344, issn 0161-6374, isbn 1-56677-461-6, 14 p.Conference Paper

Analysis of deep submicrometer bulk and fully depleted SOI nmosfet analog operation at cryogenic temperaturesPAVANELLO, M. A; MARTINO, J. A; SIMOEN, E et al.Proceedings - Electrochemical Society. 2005, pp 289-294, issn 0161-6374, isbn 1-56677-461-6, 6 p.Conference Paper

Meta-stable dip (MSD) effect in fully-depleted SOI CMOSFETsBAWEDIN, M; YUN, J. G; CRISTOLOVEANU, S et al.Proceedings - Electrochemical Society. 2005, pp 51-56, issn 0161-6374, isbn 1-56677-461-6, 6 p.Conference Paper

Recent radiation issues in silicon-on-insulator devicesALLES, M. L; BALL, D. R; SCHRIMPF, R. D et al.Proceedings - Electrochemical Society. 2005, pp 87-98, issn 0161-6374, isbn 1-56677-461-6, 12 p.Conference Paper

Ring resonator with sharp U-turns using an SOI-based photonic crystal waveguideIIDA, Yukio; OMURA, Yasuhisa; URAKAWA, Fumio et al.Proceedings - Electrochemical Society. 2005, pp 219-224, issn 0161-6374, isbn 1-56677-461-6, 6 p.Conference Paper

Silicon-on-insulator technology and devices XI (Paris, 28 April - 2 May 2003)Celler, G; Fossum, J; Gamiz, F et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-375-X, XI, 522 p, isbn 1-56677-375-XConference Proceedings

Defects and electrical consequences in SOI buried oxidesHOVEL, H. J; ALMONTE, M; LEE, J. D et al.Proceedings - Electrochemical Society. 2003, pp 105-110, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Investigation of charge control related performances in double-gate SOI MOSFETsKILCHYTSKA, V; CHUNG, T. M; VAN MEER, H et al.Proceedings - Electrochemical Society. 2003, pp 225-230, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Comparative study of the dynamic performance of bulk and FDSOI mosfet by means of a Monte Carlo simulationRENGEL, R; PARDO, D; MARTIN, M. J et al.Proceedings - Electrochemical Society. 2003, pp 283-288, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Extraction of high frequency noise parameters of 0.25μm partially depleted silicon-on-insulator MOSFET: Impact of the high resistivity substrateDAVIOT, R; ROZEAU, O; CHOUTEAU, S et al.Proceedings - Electrochemical Society. 2003, pp 473-478, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Evidence for a linear kink effect in ultra-thin gate oxide SOI MOSFETsMERCHA, A; RAFI, J. M; SIMOEN, E et al.Proceedings - Electrochemical Society. 2003, pp 319-324, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

An accurate model for threshold voltage and S-factor of partially-depleted surrounding gate transistor (PD-SGT)YAMAMOTO, Yasue; HIOKI, Masakazu; NISHI, Ryohsuke et al.Proceedings - Electrochemical Society. 2003, pp 325-330, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Nature of high-temperature charge instability in fully depleted SOI MOSFETsNAZAROV, A. N; LYSENKO, V. S; COLINGE, J.-P et al.Proceedings - Electrochemical Society. 2003, pp 455-460, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Saturation current model for the N-channel G⁴-FETDUFRENE, B; BLALOCK, B; CRISTOIOVEANU, S et al.Proceedings - Electrochemical Society. 2003, pp 367-372, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Status and future development of PDSOI MOSFETsKRISHNAN, Srinath.Proceedings - Electrochemical Society. 2003, pp 215-224, issn 0161-6374, isbn 1-56677-375-X, 10 p.Conference Paper

Atomistic simulation of the isotope effect on defect formation in H/D-implanted SiZAHEL, T; OTTO, G; HOBLER, G et al.Proceedings - Electrochemical Society. 2005, pp 179-184, issn 0161-6374, isbn 1-56677-461-6, 6 p.Conference Paper

Evaluation of commercial SGOI and SSOI wafers and comparison with epitaxially grown strained-Si by means of laser confocal inspection systemOGURA, Atsushi; OKABAYASHI, Osamu.Proceedings - Electrochemical Society. 2005, pp 371-376, issn 0161-6374, isbn 1-56677-461-6, 6 p.Conference Paper