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A new compact high dI/dt gate drive unit for 6-inch GCTsGRUENING, H; KOYANAGI, K.International Symposium on Power Semiconductor Devices & ICs. 2004, pp 265-268, isbn 4-88686-060-5, 4 p.Conference Paper

Validation of MOSFET model source-drain symmetryMCANDREW, Colin C.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 9, pp 2202-2206, issn 0018-9383, 5 p.Article

Substrate current, gate current and lifetime prediction of deep-submicron nMOS devicesZHI CUI; LIOU, Juin J; YUN YUE et al.Solid-state electronics. 2005, Vol 49, Num 3, pp 505-511, issn 0038-1101, 7 p.Article

Direct tunneling gate current in deep submicron MOSFETsZAMAN, S; HAQUE, A.SPIE proceedings series. 2002, pp 743-745, isbn 0-8194-4500-2, 2VolConference Paper

Analytical model for the programming of source side injection SST superflash split-gate cell using two-dimensional analysisHUMAN GUAN; LEE, Dana; LI, G. P et al.Solid-state electronics. 2004, Vol 48, Num 12, pp 2199-2206, issn 0038-1101, 8 p.Article

Modeling of gate current and capacitance in nanoscale-MOS structuresSUN, J. P; WEI WANG; TOYABE, Toru et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 12, pp 2950-2957, issn 0018-9383, 8 p.Article

A Gate-Current Model for Advanced MOSFET Technologies Implemented into HiSIM2INAGAKI, Ryosuke; SADACHIKA, Norio; NAVARRO, Dondee et al.IEEJ transactions on electrical and electronic engineering. 2008, Vol 3, Num 1, pp 64-71, issn 1931-4973, 8 p.Article

Optimization of sub 100 nm Γ-gate Si-mosfets for RF applicationsGUPTA, Mayank; VIDYA, V; RAMGOPAL RAO, V et al.SPIE proceedings series. 2002, pp 652-656, isbn 0-8194-4500-2, 2VolConference Paper

Effect of thermal annealing on MIST-deposited HFSIO4/SIOX/SI structuresCHANG, K; LEE, D.-O; SHANMUGASUNDARAM, K et al.Proceedings - Electrochemical Society. 2003, pp 429-435, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Transistors with dual work function metal gates by single full silicidation (FUSI) of polysilicon gatesMASZARA, W. P; KRIVOKAPIC, Z; KING, P et al.IEDm : international electron devices meeting. 2002, pp 367-370, isbn 0-7803-7462-2, 4 p.Conference Paper

Implications of progressive wear-out for lifetime extrapolation of ultra-thin (EOT ∼ 1 nm) SiON filmsKACZER, B; DEGRAEVE, R; O'CONNOR, R et al.International Electron Devices Meeting. 2004, pp 713-716, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Electrophysiologically identified subpopulations of taste bud cellsROMANOV, Roman A; KOLESNIKOV, Stanislav S.Neuroscience letters. 2006, Vol 395, Num 3, pp 249-254, issn 0304-3940, 6 p.Article

Gate current random telegraph noise and single defect conductionKACZER, B; TOLEDANO-LUQUE, M; GOES, W et al.Microelectronic engineering. 2013, Vol 109, pp 123-125, issn 0167-9317, 3 p.Article

DC/RF Hysteresis in Microwave pHEMT Amplifier Induced by Gate Current-Diagnosis and EliminationKUO, Nai-Chung; CHI, Pin-Sung; SUAREZ, Almudena et al.IEEE transactions on microwave theory and techniques. 2011, Vol 59, Num 11, pp 2919-2930, issn 0018-9480, 12 p.Article

Study of the linear kink effect in PD SOI nMOSFETsGHEDINI DER AGOPIAN, Paula; MARTINO, Joäo Antonio; SIMOEN, Eddy et al.Microelectronics journal. 2007, Vol 38, Num 1, pp 114-119, issn 0959-8324, 6 p.Article

Impact of Edge Encroachment on Programming and Erasing Gate Current in NAND-Type Flash MemoryLIANG, Ji-Ting; SHIH, Chun-Hsing; HUANG, Chiu-Tsung et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 4, pp 1257-1263, issn 0018-9383, 7 p.Article

Hot-carrier-induced time dependent dielectric breakdown in high voltage pMOSFETsALAGI, F.Microelectronics and reliability. 2011, Vol 51, Num 8, pp 1283-1288, issn 0026-2714, 6 p.Article

Reliability analysis of A1GaN/GaN HEMT on SopSiC composite substrate under long-term DC-life testRONCHI, N; ZANON, F; STOCCO, A et al.Microelectronics and reliability. 2009, Vol 49, Num 9-11, pp 1207-1210, issn 0026-2714, 4 p.Conference Paper

On the Impact of Defects Close to the Gate Electrode on the Low-Frequency 1/f NoiseMAGNONE, Paolo; PANTISANO, Luigi; CRUPI, Felice et al.IEEE electron device letters. 2008, Vol 29, Num 9, pp 1056-1058, issn 0741-3106, 3 p.Article

MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAIN/AIN/GaN MOS-HEMTsABERMANN, S; POZZOVIVO, G; KUZMIK, J et al.Semiconductor science and technology. 2007, Vol 22, Num 12, pp 1272-1275, issn 0268-1242, 4 p.Article

Surface leakage currents in SiNx passivated AlGaN/GaN HFETsTAN, W. S; UREN, M. J; HOUSTON, P. A et al.IEEE electron device letters. 2006, Vol 27, Num 1, pp 1-3, issn 0741-3106, 3 p.Article

Product level reliability challenges for 65nm technologiesPUCHNER, H; NIGAM, T; MANJULARANI, K. N et al.Proceedings - Electrochemical Society. 2006, pp 101-114, issn 0161-6374, isbn 1-56677-438-1, 1Vol, 14 p.Conference Paper

A model to study the effect of selective anodic oxidation on ultrathin gate oxidesMARATHE, Vaibhav G; PAILY, Roy; DASGUPTA, Amitava et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 1, pp 118-121, issn 0018-9383, 4 p.Article

Tunnel oxide degradation under pulsed stressGHIDINI, G; CAPOLUPO, C; GIUSTO, G et al.Microelectronics and reliability. 2005, Vol 45, Num 9-11, pp 1337-1342, issn 0026-2714, 6 p.Conference Paper

Cache leakage power analysis in embedded applicationsKUDITHIPUDI, D; PETKO, S; JOHN, E et al.MWSCAS : Midwest symposium on circuits and systems. 2004, isbn 0-7803-8346-X, 3Vol, Vol II, 517-520Conference Paper

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