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On the introduction of a measurement standard for high-purity germanium crystals to be used in radiation detectorsDARKEN, L.IEEE transactions on nuclear science. 1994, Vol 41, Num 1, pp 394-395, issn 0018-9499, 2Article

Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation techniqueHAIGUI YANG; DONG WANG; NAKASHIMA, Hiroshi et al.Thin solid films. 2012, Vol 520, Num 8, pp 3283-3287, issn 0040-6090, 5 p.Conference Paper

Special issue on silicon germanium - advanced technology, modeling, and designSINGH, Raminderpal; HARAME, David L; MEYERSON, Bernard S et al.Proceedings of the IEEE. 2005, Vol 93, Num 9, issn 0018-9219, 161 p.Serial Issue

VITRIFICATION ET CRISTALLISATION DANS LES SYSTEMES TERNAIRES DE GERMANATES DE LANTHANE AVEC LES OXYDES DE TANTALE, CHAFNIUM ET ZIRCONIUMGUTKINA NG; KOZHINA II; SHMATOK LK et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 4; PP. 726-729; BIBL. 12 REF.Article

On the chemical threshold in chalcogenide glassesTICHY, L; TICHA, H.Materials letters (General ed.). 1994, Vol 21, Num 3-4, pp 313-319, issn 0167-577XArticle

The effects of Te, I atoms on the properties and structure of Ge-As-Se system glassesJIAN XU; RUNYU YANG; QUANQING CHEN et al.Journal of non-crystalline solids. 1995, Vol 184, pp 302-308, issn 0022-3093Conference Paper

Ge wire MOSFETs fabricated by three-dimensional Ge condensation techniqueIRISAWA, T; NUMATA, T; HIRASHITA, N et al.Thin solid films. 2008, Vol 517, Num 1, pp 167-169, issn 0040-6090, 3 p.Conference Paper

VITRIFICATION ET CRISTALLISATION DANS LES SYSTEMES TERNAIRES DE GERMANATES DE LANTHANE AVEC LES OXYDES DE GALLIUM ET DE BOREGUTKINA NG; KOZHINA II; SHMATOK LK et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 4; PP. 721-725; BIBL. 9 REF.Article

Influence of operating voltage on single- and double-escape peak efficiencies in HPGe-measured spectraJIUNN-HSING CHAO.Applied radiation and isotopes. 1993, Vol 44, Num 12, pp 1417-1423, issn 0969-8043Article

Resolution degradation of coaxial p-type germanium detectors due to hole trapping by point defectsDARKEN, L. S; JELLISON, G. E.Journal of applied physics. 1993, Vol 74, Num 7, pp 4557-4560, issn 0021-8979Article

Ge surface segregation during Si1-xGex(011) gas-source molecular beam epitaxy from Si2H6 and Ge2H6TAYLOR, N; KIM, H; GREENE, J. E et al.Surface science. 2001, Vol 475, Num 1-3, pp 171-180, issn 0039-6028Article

Surface crystallization of ion-implantation damaged Si95Ge5 on Si(100)PETÖ, G; HORVATH, Z. E; KANSKI, J et al.Applied surface science. 2000, Vol 166, pp 428-432, issn 0169-4332Conference Paper

Si-based electroluminescence at THz frequenciesLYNCH, S. A; DHILLON, S. S; CULLIS, A. G et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 10-12, issn 0921-5107Conference Paper

Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractionsHAIGUI YANG; DONG WANG; NAKASHIMA, Hiroshi et al.Thin solid films. 2010, Vol 518, Num 9, pp 2342-2345, issn 0040-6090, 4 p.Conference Paper

THE HEAT OF MIXING IN LIQUID SI-GE, SI-SN, AND GE-SN MIXTURESSOMA T; MATSUO H; KATOH T et al.1981; PHYS. STATUS SOLIDI, SECT. B, BASIC RES.; DDR; DA. 1981-07-01; VOL. 106; NO 1; PP. K5-K7; BIBL. 7 REF.Article

THERMODYNAMICS OF AL-SI AND GE-SI LIQUID ALLOYS: ENTHALPIES OF FORMATION BY HIGH-TEMPERATURE CALORIMETRYBROS JP; ESLAMI H; GAUNE P et al.1981; BER. BUNSENGES. PHYS. CHEM.; DEU; DA. 1981-04; VOL. 85; NO 4; PP. 333-336; BIBL. 31 REF.Article

POSITRONENVERNICHTUNG GESCHMOLZENER BINAERER LEGIERUNGEN, DIE EIN UEBERGANGS- ODER EDELMETALL ENTHALTENKITA Y; UEDA M; MORITA Z et al.1983; J. JAP. INST. MET.; ISSN 0021-4876; JPN; DA. 1983-02; VOL. 47; NO 2; PP. 120-126; BIBL. 15 REF.Article

A high-power solid-state p+-n-n+ diode for picosecond-range closing switchingFEI ZHANG; LINA SHI; CHENGFANG LI et al.Semiconductor science and technology. 2005, Vol 20, Num 10, pp 991-997, issn 0268-1242, 7 p.Article

Influence of the extrinsic base on the base current kink in SiGe BJTsSADOVNIKOV, Alexei; KRAKOWSKI, Tracey; EL-DIWANY, Monir et al.Applied surface science. 2004, Vol 224, Num 1-4, pp 320-323, issn 0169-4332, 4 p.Conference Paper

Enthalpies of formation of binary systems of Ti, V, Mo and Hf with GeYASSIN, Abeer; GILBERT, Marcel; CASTANET, Robert et al.Journal of alloys and compounds. 2001, Vol 322, Num 1-2, pp L19-L22, issn 0925-8388Article

Flattening of low temperature epitaxial Gel1―xSnx/Ge/Si(100) alloys via mass transport during post-growth annealingWEI WANG; SHAOJIAN SU; JUN ZHENG et al.Applied surface science. 2011, Vol 257, Num 9, pp 4468-4471, issn 0169-4332, 4 p.Article

Hydrogen effects on fabrication of SGOI by oxidation of SiGe layers on SOI wafersXINLI CHENG; ZHILANG LIN; YONDIN WANG et al.Semiconductor science and technology. 2005, Vol 20, Num 3, pp L1-L4, issn 0268-1242Article

Study of Ge2S3 glass undoped and doped with metals by positron annihilation technique = Untersuchung von undotiertem und mit Metallen dotiertem Ge2S3-Glas mit der PositronenvernichtungstechnikKOBRIN, B.V; SHANTAROVICH, V.P.Physica status solidi. A. Applied research. 1984, Vol 83, Num 1, pp 159-164, issn 0031-8965Article

Influence of addition of Fe, Co or Ni on the properties of antiferromagnetic Invar Mn-Ge alloys = Influence d'additions de Fe, Co ou Ni sur les propriétés des alliages du type Invar Mn-GeMASUMOTO, H; KIKUCHI, M; NAKAYAMA, T et al.Transactions of the Japan institute of metals. 1983, Vol 24, Num 11, pp 773-780, issn 0021-4434Article

Modelling of self-heating effects in SiGe-HBTsSENAPATI, B; MAITI, C. K.SPIE proceedings series. 2002, pp 718-720, isbn 0-8194-4500-2, 2VolConference Paper

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