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Ge wire MOSFETs fabricated by three-dimensional Ge condensation techniqueIRISAWA, T; NUMATA, T; HIRASHITA, N et al.Thin solid films. 2008, Vol 517, Num 1, pp 167-169, issn 0040-6090, 3 p.Conference Paper

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Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractionsHAIGUI YANG; DONG WANG; NAKASHIMA, Hiroshi et al.Thin solid films. 2010, Vol 518, Num 9, pp 2342-2345, issn 0040-6090, 4 p.Conference Paper

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A high-power solid-state p⁺-n-n⁺ diode for picosecond-range closing switchingFEI ZHANG; LINA SHI; CHENGFANG LI et al.Semiconductor science and technology. 2005, Vol 20, Num 10, pp 991-997, issn 0268-1242, 7 p.Article

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Flattening of low temperature epitaxial Gel_1―xSn_x/Ge/Si(100) alloys via mass transport during post-growth annealingWEI WANG; SHAOJIAN SU; JUN ZHENG et al.Applied surface science. 2011, Vol 257, Num 9, pp 4468-4471, issn 0169-4332, 4 p.Article

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A personal computer based program for HPGe detector absolute-peak-efficiency calculation and calibrationTIEN-KO WANG; TAI-YIN CHEN; LIH-JEN KANG et al.Applied radiation and isotopes. 1993, Vol 44, Num 8, pp 1147-1154, issn 0969-8043Article

Analytical study of amplitude rise time compensated timing with coaxial Ge(Li) detectorsEL-WAHAB, M. A; EL-ARABI, A.IEEE transactions on nuclear science. 1993, Vol 40, Num 2, pp 147-152, issn 0018-9499Conference Paper