Density-functional calculation of hyperfine interaction constants of dangling bond and weak bond in GeN and SiN filmsYOKOMICHI, H; ISHII, N.Journal of non-crystalline solids. 2004, Vol 338-40, pp 412-415, issn 0022-3093, 4 p.Conference Paper

Elimination of GeO₂ and Ge₃N₄ interfacial transition regions and defects at n-type Ge interfaces : A pathway for formation of n-MOS devices on Ge substratesLUCOVSKY, G; LEE, S; LONG, J. P et al.Applied surface science. 2008, Vol 254, Num 23, pp 7933-7937, issn 0169-4332, 5 p.Conference Paper

Electronic structural properties of β-C₃N₄, β-Si₃N₄ and β-Ge₃N₄DUAN, Y; ZHANG, K; XIE, X et al.Physica status solidi. B. Basic research. 1997, Vol 200, Num 2, pp 499-508, issn 0370-1972Article

Characterization of W-Ge-N coatings deposited by sputteringPIEDADE, A. P; GOMES, M. J; PIERSON, J. F et al.Surface & coatings technology. 2006, Vol 200, Num 22-23, pp 6303-6307, issn 0257-8972, 5 p.Conference Paper

High pressure-high temperature investigation of the stability of nitride spinels in the systems Si₃N₄-Ge₃N₄SOIGNARD, Emmanuel; SOMAYAZULU, Maddury; MAO, Ho-Kwang et al.Solid state communications. 2001, Vol 120, Num 5-6, pp 237-242, issn 0038-1098Article

Pressure-induced transformations in α- and β-Ge₃N₄: in situ studies by synchrotron X-ray diffractionSOIGNARD, Emmanuel; MCMILLAN, Paul F; HEJNY, Clivia et al.Journal of solid state chemistry (Print). 2004, Vol 177, Num 1, pp 299-311, issn 0022-4596, 13 p.Article

The homologous series of the group 14-element spinel nitridesSCHWARZ, Marcus.Silicates industriels. 2004, Num 7-8, pp 333-340, issn 0037-5225, 8 p.Conference Paper

Pathways to metastable nitride structuresKROLL, Peter.Journal of solid state chemistry (Print). 2003, Vol 176, Num 2, pp 530-537, issn 0022-4596, 8 p.Article

Germanium nitride layers prepared by supersonic r.f. plasma jetSOUKUP, L; PERINA, V; JASTRABIK, L et al.Surface & coatings technology. 1996, Vol 78, Num 1-3, pp 280-283, issn 0257-8972Article

Electronic structure of amorphous germanium-nitrogen alloys : a UV photoelectron spectroscopy studyCOMEDI, D; ZANATTA, A. R; ALVAREZ, F et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 136-139, issn 0022-3093, 1Conference Paper

MD simulations of the cluster beam deposition of porous GeHARJUNMAA, A; TARUS, J; NORDLUND, K et al.The European physical journal. D, Atomic, molecular and optical physics (Print). 2007, Vol 43, Num 1-3, pp 165-168, issn 1434-6060, 4 p.Conference Paper

Theoretical study of the insulating oxides and nitrides: SiO₂, GeO₂, Al₂O₃, Si₃N₄, and Ge₃N₄SEVIK, Cem; BULUTAY, Ceyhun.Journal of materials science. 2007, Vol 42, Num 16, pp 6555-6565, issn 0022-2461, 11 p.Article

Electron irradiation effects in multi-layer nitric oxide films on Ge(1 0 0)SANDERS, M; CRAIG, J. H.Thin solid films. 2002, Vol 414, Num 2, pp 251-255, issn 0040-6090Article

Effective doping in cubic Si₃N₄ and Ge₃N₄: A first-principles study : Structure and properties of advanced nitrides and electronic nitridesOBA, Fumiyasu; TATSUMI, Kazuyoshi; TANAKA, Isao et al.Journal of the American Ceramic Society. 2002, Vol 85, Num 1, pp 97-100, issn 0002-7820Conference Paper

Preparation of Ge₃N₄ films on the germanium surfaceNAKHUTSRISHVILI, I. G; DZHISHIASHVILI, D. A; MIMINOSHVILI, E. B et al.Inorganic materials. 2000, Vol 36, Num 11, pp 1125-1126, issn 0020-1685Article

Thin films of amorphous germanium-nitrogen alloys prepared by radio-frequency reactive sputteringMARUYAMA, T; ICHIDA, M.Journal of the Electrochemical Society. 1999, Vol 146, Num 3, pp 1186-1188, issn 0013-4651Article

Bond distribution and structure of amorphous germanium-nitrogen alloysZANATTA, A. R; CHAMBOULEYRON, I.Physica status solidi. B. Basic research. 1996, Vol 193, Num 2, pp 399-410, issn 0370-1972Article

Preparation and properties of a-Ge_1-xN_xYOKOMICHI, H; OKINA, T; KONDO, M et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 379-382, issn 0022-3093, 1Conference Paper

Influence of the deposition conditions on the properties of amorphous germanium nitrogen alloysVILCARROMERO, J; MARQUES, F. C.Physica status solidi. B. Basic research. 1995, Vol 192, Num 2, pp 543-547, issn 0370-1972Conference Paper

Stress and elastic constants of amorphous germanium nitrogen alloysMARQUES, F. C; LACERDA, R. G; LIMA, M. M et al.Physica status solidi. B. Basic research. 1995, Vol 192, Num 2, pp 549-554, issn 0370-1972Conference Paper

Preparation of germanium oxynitride films in ammoniaNAKHUTSRISHVILI, I. G; DZHISHIASHVILI, D. A; MKERVALISHVILI, Z. I et al.Inorganic materials. 2003, Vol 39, Num 8, pp 833-835, issn 0020-1685, 3 p.Article

Photoluminescence of silica glasses prepared by plasma-chemical oxidation of SiCl4 in gas phase under oxygen-deficient conditionsRYBALTOVSKII, A. O; DIANOV, E. M; GOLANT, K. M et al.Glass physics and chemistry. 1999, Vol 25, Num 2, pp 137-144, issn 1087-6596Article

Relationship between density and structure of the chalconitride glassesCHEN, G. R; CHENG, J. J; CHEN, W et al.Glass technology. 1997, Vol 38, Num 4, pp 141-144, issn 0017-1050Article

Two-, One-, and Zero-Dimensional Elemental Nanostructures Based on Ge₉-ClustersKARTTUNEN, Antti J; FÄSSLER, Thomas F; LINNOLAHTI, Mikko et al.ChemPhysChem (Print). 2010, Vol 11, Num 9, pp 1944-1950, issn 1439-4235, 7 p.Article

Preparation and characterization of a new tetrahedral oxynitride phase Cd_2-x GeO_4-x-3yN_2yLOUIS DIT PICARD, C; MERDRIGNAC, O; GUYADER, J et al.Journal of solid state chemistry (Print). 1995, Vol 119, Num 2, pp 304-310, issn 0022-4596Article