Special issue on silicon germanium - advanced technology, modeling, and designSINGH, Raminderpal; HARAME, David L; MEYERSON, Bernard S et al.Proceedings of the IEEE. 2005, Vol 93, Num 9, issn 0018-9219, 161 p.Serial Issue

Ge surface segregation during Si_1-xGe_x(011) gas-source molecular beam epitaxy from Si₂H₆ and Ge₂H₆TAYLOR, N; KIM, H; GREENE, J. E et al.Surface science. 2001, Vol 475, Num 1-3, pp 171-180, issn 0039-6028Article

Surface crystallization of ion-implantation damaged Si₉₅Ge₅ on Si(100)PETÖ, G; HORVATH, Z. E; KANSKI, J et al.Applied surface science. 2000, Vol 166, pp 428-432, issn 0169-4332Conference Paper

Growth and properties of high quality A-(Si, Ge):H alloys using helium and hydrogen dilutionDALAL, Vikram L; YONG LIU; SHARMA, Puneet et al.sans titre. 2002, pp 1154-1157, isbn 0-7803-7471-1, 4 p.Conference Paper

Thermal reliability of thin SiGe epilayersWU, Ming-Jhang; WEN, Hua-Chiang; CHIANG, Tun-Yuan et al.Applied surface science. 2012, Vol 258, Num 12, pp 5001-5004, issn 0169-4332, 4 p.Article

Serial and Parallel Si, Ge, and SiGe Direct-Write with Scanning Probes and Conducting StampsVASKO, Stephanie E; KAPETANOVIC, Adnan; TALLA, Vamsi et al.Nano letters (Print). 2011, Vol 11, Num 6, pp 2386-2389, issn 1530-6984, 4 p.Article

In situ X-ray investigation of SiGe/Si islands grown by liquid phase epitaxyDEITER, S; HANKE, M; EISENSCHMIDT, C et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 8, pp 1709-1713, issn 1862-6300, 5 p.Conference Paper

Impact of 100 MeV Au on the surface of relaxed Si_0.5Ge_0.5 alloy films studied by atomic force microscopyKANJILAL, A; LUNDSGAARD HANSEN, J; NYLANDSTED LARSEN, A et al.Surface science. 2006, Vol 600, Num 15, pp 3087-3092, issn 0039-6028, 6 p.Article

Silicon-based narrow-bandgap thin-film semiconductor materials : polycrystalline SiGe prepared by reactive thermal CVDJIANJUN ZHANG; SHIMIZU, Kousaku; YING ZHAO et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 4, pp 760-775, issn 1862-6300, 16 p.Conference Paper

A high-power solid-state p⁺-n-n⁺ diode for picosecond-range closing switchingFEI ZHANG; LINA SHI; CHENGFANG LI et al.Semiconductor science and technology. 2005, Vol 20, Num 10, pp 991-997, issn 0268-1242, 7 p.Article

Interstitial-carbon-related defects in relaxed SiGe alloy : the effect of alloyingMESLI, A; LARSEN, A. Nylandsted.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 22, pp S2170-S2184, issn 0953-8984Conference Paper

Influence of the extrinsic base on the base current kink in SiGe BJTsSADOVNIKOV, Alexei; KRAKOWSKI, Tracey; EL-DIWANY, Monir et al.Applied surface science. 2004, Vol 224, Num 1-4, pp 320-323, issn 0169-4332, 4 p.Conference Paper

Photoluminescence characterization of defects in Si and SiGe structuresHIGGS, V; CHIN, F; WANG, X et al.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 49, pp 10105-10121, issn 0953-8984Article

A study of Si_1-xGe_x/Si quantum-well intermixing by photocurrent spectroscopyCHENG LI; QINQING YANG; YONGHAI CHEN et al.Thin solid films. 2000, Vol 359, Num 2, pp 236-238, issn 0040-6090Article

Hydrogen effects on fabrication of SGOI by oxidation of SiGe layers on SOI wafersXINLI CHENG; ZHILANG LIN; YONDIN WANG et al.Semiconductor science and technology. 2005, Vol 20, Num 3, pp L1-L4, issn 0268-1242Article

Analogue micropower FET techniques reviewVILCHES, Antonio; LOGA, Rodney; MICHELAKIS, Kostis et al.Semiconductor science and technology. 2004, Vol 19, Num 7, pp R19-R34, issn 0268-1242Article

A DC-5 GHz nMOSFET SPDT T/R switch in 0.25-μm SiGe BiCMOS technologyCRIPPA, Paolo; ORCIONI, Simone; RICCIARDI, Francesco et al.Applied surface science. 2004, Vol 224, Num 1-4, pp 434-438, issn 0169-4332, 5 p.Conference Paper

Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation techniqueHAIGUI YANG; DONG WANG; NAKASHIMA, Hiroshi et al.Thin solid films. 2012, Vol 520, Num 8, pp 3283-3287, issn 0040-6090, 5 p.Conference Paper

Epitaxial growth of fully relaxed Si_0.75Ge_0.25 on SOI substrateZHONGYING XUE; XING WEI; BO ZHANG et al.Applied surface science. 2011, Vol 257, Num 11, pp 5021-5024, issn 0169-4332, 4 p.Article

Ion-irradiation-induced effects in Si_mGe_n superlatticesTARUS, J; ZOLLO, G.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 23, pp 235307.1-235307.5, issn 1098-0121Article

Confined epitaxial growth by low-pressure chemical vapor depositionOSMAN, K; LLOYD, N. S; BONAR, J. M et al.Journal of materials science. Materials in electronics. 2003, Vol 14, Num 5-7, pp 257-260, issn 0957-4522, 4 p.Conference Paper

SiGe HBTs model converting technique from SGP to VBIC modelFUJIANG LIN; TIANSHU ZHOU; BO CHEN et al.Microelectronics journal. 2002, Vol 33, Num 1-2, pp 45-54, issn 0959-8324Article

Low temperature electrical performance of ultrathin oxide MOS capacitors with p⁺ poly-Si_1-xGe_x and poly-Si gate materialsJACOB, A. P; MYRBERE, T; YOUSIF, M. Y. A et al.SPIE proceedings series. 2002, pp 668-671, isbn 0-8194-4500-2, 2VolConference Paper

Thermal stability of B in poly-SiGe on SiONSADOH, T; FITRIANTO; KUNIGAMI, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 129-132, issn 0921-5107Conference Paper

Selective dominance of photoluminescence lifetime in a-Si:H-based alloysOHEDA, Hidetoshi.Journal of non-crystalline solids. 2000, Vol 266-69, pp 578-582, issn 0022-3093, 5 p., aConference Paper