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Band structures for Ge3N4 polymorphs studied by DFT-LDA and GWAGAO, Shang-Peng; GUANHUA CAI; YUAN XU et al.Computational materials science. 2013, Vol 67, pp 292-295, issn 0927-0256, 4 p.Article

High pressure-high temperature investigation of the stability of nitride spinels in the systems Si3N4-Ge3N4SOIGNARD, Emmanuel; SOMAYAZULU, Maddury; MAO, Ho-Kwang et al.Solid state communications. 2001, Vol 120, Num 5-6, pp 237-242, issn 0038-1098Article

The Raman spectra of the hexagonal and cubic (spinel) forms of Ge3N4 : an experimental and theoretical studyDEB, S. K; DONG, J; HUBERT, H et al.Solid state communications. 2000, Vol 114, Num 3, pp 137-142, issn 0038-1098Article

Observation of a paramagnetic defect at the epitaxial Ge3N4/(111)Ge interface by electron spin resonanceNGUYEN, A. P. D; STESMANS, A; AFANAS'EV, V. V et al.Thin solid films. 2010, Vol 518, Num 9, pp 2361-2364, issn 0040-6090, 4 p.Conference Paper

Interface of GaN grown on Ge(1 1 1) by plasma assisted molecular beam epitaxyLIETEN, R. R; RICHARD, O; DEGROOTE, S et al.Journal of crystal growth. 2011, Vol 314, Num 1, pp 71-75, issn 0022-0248, 5 p.Article

Influence of Mn concentration on the electronic and magnetic properties of Mn doped β-Ge3N4: A first-principles studyWANG, V; HE, H. P; ZHANG, S. L et al.Journal of magnetism and magnetic materials. 2012, Vol 324, Num 19, pp 2972-2976, issn 0304-8853, 5 p.Article

Determination of MBE grown zurtwite GaN/Ge3N4/Ge heterojunctions band offset by X-ray photoelectron spectroscopyKUMAR, Mahesh; RAJPALKE, Mohana K; ROUL, Basanta et al.Physica status solidi. B. Basic research. 2012, Vol 249, Num 1, pp 58-61, issn 0370-1972, 4 p.Article

Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces : A pathway for formation of n-MOS devices on Ge substratesLUCOVSKY, G; LEE, S; LONG, J. P et al.Applied surface science. 2008, Vol 254, Num 23, pp 7933-7937, issn 0169-4332, 5 p.Conference Paper

Electronic structural properties of β-C3N4, β-Si3N4 and β-Ge3N4DUAN, Y; ZHANG, K; XIE, X et al.Physica status solidi. B. Basic research. 1997, Vol 200, Num 2, pp 499-508, issn 0370-1972Article

Electrical Characteristics for Flash Memory With Germanium Nitride as the Charge-Trapping LayerLIN, Chia-Chun; WU, Yung-Hsien; LIN, Yuan-Sheng et al.IEEE transactions on nanotechnology. 2013, Vol 12, Num 3, pp 436-441, issn 1536-125X, 6 p.Article

First-principles study on effective doping to improve the optical properties in spinel nitridesHAO WANG; YING CHEN; KANETA, Yasunori et al.Journal of alloys and compounds. 2010, Vol 491, Num 1-2, pp 550-559, issn 0925-8388, 10 p.Article

Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4SEVIK, Cem; BULUTAY, Ceyhun.Journal of materials science. 2007, Vol 42, Num 16, pp 6555-6565, issn 0022-2461, 11 p.Article

Effective doping in cubic Si3N4 and Ge3N4: A first-principles study : Structure and properties of advanced nitrides and electronic nitridesOBA, Fumiyasu; TATSUMI, Kazuyoshi; TANAKA, Isao et al.Journal of the American Ceramic Society. 2002, Vol 85, Num 1, pp 97-100, issn 0002-7820Conference Paper

Preparation of Ge3N4 films on the germanium surfaceNAKHUTSRISHVILI, I. G; DZHISHIASHVILI, D. A; MIMINOSHVILI, E. B et al.Inorganic materials. 2000, Vol 36, Num 11, pp 1125-1126, issn 0020-1685Article

Spontaneous formation of Ge nanocrystals with the capping layer of Si3N4 by N+2 implantation and rapid thermal annealingJUNG, Min-Cherl; YOUNG MI LEE; SHIN, Hyun-Joon et al.Thin solid films. 2010, Vol 518, Num 21, pp 6010-6014, issn 0040-6090, 5 p.Article

Formation processes of Ge3N4 films by radical nitridation and their electrical propertiesKATO, Kimihiko; KONDO, Hiroki; SAKASHITA, Mitsuo et al.Thin solid films. 2010, Vol 518, issn 0040-6090, S226-S230, SUP1Conference Paper

Pressure-induced transformations in α- and β-Ge3N4: in situ studies by synchrotron X-ray diffractionSOIGNARD, Emmanuel; MCMILLAN, Paul F; HEJNY, Clivia et al.Journal of solid state chemistry (Print). 2004, Vol 177, Num 1, pp 299-311, issn 0022-4596, 13 p.Article

The homologous series of the group 14-element spinel nitridesSCHWARZ, Marcus.Silicates industriels. 2004, Num 7-8, pp 333-340, issn 0037-5225, 8 p.Conference Paper

Pathways to metastable nitride structuresKROLL, Peter.Journal of solid state chemistry (Print). 2003, Vol 176, Num 2, pp 530-537, issn 0022-4596, 8 p.Article

Preparation of germanium oxynitride films in ammoniaNAKHUTSRISHVILI, I. G; DZHISHIASHVILI, D. A; MKERVALISHVILI, Z. I et al.Inorganic materials. 2003, Vol 39, Num 8, pp 833-835, issn 0020-1685, 3 p.Article

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