kw.\*:("Germanium nitrure")
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GE3N4-INP MIS STRUCTURESPANDE KP; POURDAVOUD S.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 7; PP. 182-184; BIBL. 19 REF.Article
MASS SPECTROMETRIC DETERMINATION OF THE HEATS OF FORMATION AND ATOMIZATION ENERGIES OF THE MOLECULES GE2N AND GESINMUENOW DW.1974; J. CHEM. PHYS.; U.S.A.; DA. 1974; VOL. 60; NO 9; PP. 3382-3384; BIBL. 16 REF.Article
LE NITRURE DE GERMANIUM. IVPAULEAU Y; HANTZPERGUE JJ; REMY JC et al.1980; MATER. CHEM.; ISSN 0390-6035; ITA; DA. 1980; VOL. 5; NO 6; PP. 371-395; ABS. ENG; BIBL. 118 REF.Article
Nonstoichiometric germanium nitride. A new insulating material for MIS microelectronics. I: The choice of the insulator and depositionBAGRATISHVILI, G. D; DZANALIDZE, R. B; JISHIASHVILI, D. A et al.Physica status solidi. A. Applied research. 1983, Vol 78, Num 1, pp 115-123, issn 0031-8965Article
ELECTRONIC STRUCTURES OF SI2N2O AND GE2N2O CRYSTALSCHING WY; SHANG YUAN REN.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 10; PP. 5788-5795; BIBL. 25 REF.Article
High pressure-high temperature investigation of the stability of nitride spinels in the systems Si3N4-Ge3N4SOIGNARD, Emmanuel; SOMAYAZULU, Maddury; MAO, Ho-Kwang et al.Solid state communications. 2001, Vol 120, Num 5-6, pp 237-242, issn 0038-1098Article
RuO2-loaded β-Ge3N4 as a non-oxide photocatalyst for overall water splittingSATO, Junya; SAITO, Nobuo; YAMADA, Yoko et al.Journal of the American Chemical Society. 2005, Vol 127, Num 12, pp 4150-4151, issn 0002-7863, 2 p.Article
Density-functional calculation of hyperfine interaction constants of dangling bond and weak bond in GeN and SiN filmsYOKOMICHI, H; ISHII, N.Journal of non-crystalline solids. 2004, Vol 338-40, pp 412-415, issn 0022-3093, 4 p.Conference Paper
Effect of germanium addition on the properties of reactively sputtered ZrN filmsPILLOUD, D; PIERSON, J. F; CAVALEIRO, A et al.Thin solid films. 2005, Vol 492, Num 1-2, pp 180-186, issn 0040-6090, 7 p.Article
Photoluminescence of a-GeN alloys doped with different rare-earth ionsRIBEIRO, C. T. M; ZANATTA, A. R.Journal of non-crystalline solids. 2004, Vol 338-40, pp 469-472, issn 0022-3093, 4 p.Conference Paper
Electronic structural properties of β-C3N4, β-Si3N4 and β-Ge3N4DUAN, Y; ZHANG, K; XIE, X et al.Physica status solidi. B. Basic research. 1997, Vol 200, Num 2, pp 499-508, issn 0370-1972Article
Defects in magnetron-sputtered a-Ge1-xNx:HMIN, H; UEDA, S; ISHII, N et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 375-378, issn 0022-3093, 1Conference Paper
INTERFACE CHARACTERISTICS OF GE3N4-(N-TYPE) GAAS MIS DEVICESPANDE KP; CHEN ML; YOUSUF M et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 12; PP. 1107-1109; BIBL. 19 REF.Article
PROCEDE D'OBTENTION DU NITRURE DE GERMANIUM ET PROPRIETES DES STRUCTURES GAAS-GE3N4-ALBAGRATISHVILI GD; DZHANELIDZE RB; KURDIANI NI et al.1973; MIKROELEKTRONIKA; S.S.S.R.; DA. 1973; VOL. 2; NO 2; PP. 173-177; BIBL. 5 REF.Serial Issue
CARACTERISATION DE FILMS DIELECTRIQUES DE NITRURES AMORPHES OBTENUS PAR PULVERISATION CATHODIQUE REACTIVE.HANTZPERGUE JJ; DOUCET Y; PAULEAU Y et al.1975; ANN. CHIM.; FR.; DA. 1975; VOL. 10; NO 4-5; PP. 211-220; ABS. ANGL.; BIBL. 23 REF.Article
Pressure-induced transformations in α- and β-Ge3N4: in situ studies by synchrotron X-ray diffractionSOIGNARD, Emmanuel; MCMILLAN, Paul F; HEJNY, Clivia et al.Journal of solid state chemistry (Print). 2004, Vol 177, Num 1, pp 299-311, issn 0022-4596, 13 p.Article
The homologous series of the group 14-element spinel nitridesSCHWARZ, Marcus.Silicates industriels. 2004, Num 7-8, pp 333-340, issn 0037-5225, 8 p.Conference Paper
Sr3GeMgN4: new quaternary nitride containing MgDONG GON PARK; GAL, Zoltan A; DISALVO, Francis J et al.Journal of alloys and compounds. 2003, Vol 360, pp 85-89, issn 0925-8388, 5 p.Article
Pathways to metastable nitride structuresKROLL, Peter.Journal of solid state chemistry (Print). 2003, Vol 176, Num 2, pp 530-537, issn 0022-4596, 8 p.Article
Germanium nitride layers prepared by supersonic r.f. plasma jetSOUKUP, L; PERINA, V; JASTRABIK, L et al.Surface & coatings technology. 1996, Vol 78, Num 1-3, pp 280-283, issn 0257-8972Article
Electronic structure of amorphous germanium-nitrogen alloys : a UV photoelectron spectroscopy studyCOMEDI, D; ZANATTA, A. R; ALVAREZ, F et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 136-139, issn 0022-3093, 1Conference Paper
Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4SEVIK, Cem; BULUTAY, Ceyhun.Journal of materials science. 2007, Vol 42, Num 16, pp 6555-6565, issn 0022-2461, 11 p.Article
Epitaxial growth and characterization of ZnGeN2 by metalorganic vapor phase epitaxyMISAKI, Takao; WAKAHARA, Akihiro; OKADA, Hiroshi et al.Journal of crystal growth. 2004, Vol 260, Num 1-2, pp 125-129, issn 0022-0248, 5 p.Article
The electrochemistry of germanium nitride with LithiumPEREIRA, N; BALASUBRAMANIAN, M; DUPONT, L et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 8, pp 1118-1128, issn 0013-4651, 11 p.Article
Electron irradiation effects in multi-layer nitric oxide films on Ge(1 0 0)SANDERS, M; CRAIG, J. H.Thin solid films. 2002, Vol 414, Num 2, pp 251-255, issn 0040-6090Article