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Results 1 to 25 of 107

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Pricing irrigation water in Mexico: efficiency, equity and revenue considerationsSCHRAMM G; GONZALES F. V.Annals of regional science. 1977, Vol 11, Num 1, pp 15-35Article

THE RELATIONSHIP OF RIBOSOMAL RNA SYNTHESIS TO THE FORMATION OF SEGREGATED NUCLEOLI AND NUCLEOLUS-LIKE BODIES.MILLER L; GONZALES F.1976; J. CELL BIOL.; U.S.A.; DA. 1976; VOL. 71; NO 3; PP. 939-949; BIBL. 1 P.Article

L'indifférence à la différence. La cause des Indiens est renvoyée dans la salle d'attenteATENCIO-GONZALES, F.Recherches amérindiennes au Québec. 1992, Vol 22, Num 1, pp 85-87, issn 0318-4137Article

DE L'ASILE AU SECTEUR EN DEUX ANS.DERMENGHEM JF; DARMANIN J; GONZALES F et al.1977; ANN. MEDICO-PSYCHOL.; FR.; DA. 1977; VOL. 2; NO 1; PP. 172-175Article

EFFETTO DELLA MACINAZIONE SULLA STRUTTURA DEI CARBONATI ALCALINO-TERROSI = INFLUENCE DU BROYAGE SUR LA STRUCTURE DES CARBONATES ALCALINO-TERREUXCRIADO JM; GONZALES F; MORALES J et al.1978; CERAM. INFORM.; ITA; DA. 1978; VOL. 13; NO 10; PP. 711-714; BIBL. 17 REF.; IDEM. ENGArticle

Noise properties and hetero-interface trap in sige-channel PMOSFETSTSUCHIYA, Toshiaki; MUROTA, Junichi.Proceedings - Electrochemical Society. 2003, pp 241-252, issn 0161-6374, isbn 1-56677-376-8, 12 p.Conference Paper

Integration issues with high k gate stacksOSBURN, C. M; HAN, S. K; KINGON, A et al.Proceedings - Electrochemical Society. 2003, pp 375-390, issn 0161-6374, isbn 1-56677-376-8, 16 p.Conference Paper

An analysis of the effect of the steps for isolation formation on STI process integrationPAVAN, Alessia; BRAZZELLI, Daniela; AIELLO, Marta et al.Proceedings - Electrochemical Society. 2003, pp 467-476, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

Status and future development of PDSOI MOSFETsKRISHNAN, Srinatha.Proceedings - Electrochemical Society. 2003, pp 556-565, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

Sub-quarter-micron pmosfet DC and AC NBTI degradationERHONG LI; PRASAD, Sharad; PARK, Sangjune et al.Proceedings - Electrochemical Society. 2003, pp 408-417, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

Defect generation and suppression in device processes using a shallow trench isolation schemePESCHIAROLI, D; BRAMBILLA, M; MICA, I et al.Proceedings - Electrochemical Society. 2003, pp 477-488, issn 0161-6374, isbn 1-56677-376-8, 12 p.Conference Paper

Performance limitations of metal interconnects and possible alternativesSARASWAT PAWAN KAPUR, Krishna C; SOURI, Shukri.Proceedings - Electrochemical Society. 2003, pp 194-205, issn 0161-6374, isbn 1-56677-376-8, 12 p.Conference Paper

Advanced multilevel interconnect technologies for 40-nm Lg devicesOHBA, Takayuki.Proceedings - Electrochemical Society. 2003, pp 183-193, issn 0161-6374, isbn 1-56677-376-8, 11 p.Conference Paper

Emerging silicon-on-nothing (SON) devices technologySKOTNICKI, T; MONFRAY, S; FENOUILLET-BERANGER, C et al.Proceedings - Electrochemical Society. 2003, pp 503-517, issn 0161-6374, isbn 1-56677-376-8, 15 p.Conference Paper

Optimization of ultra-thin body, fully-depleted-SOI device, with raised source/drain or raised extensionEGLEY, J. L; VANDOOREN, Anne; WINSTEAD, Brian et al.Proceedings - Electrochemical Society. 2003, pp 572-577, issn 0161-6374, isbn 1-56677-376-8, 6 p.Conference Paper

The impact of single wafer processing on process integrationSINGH, R; FAKHRUDDIN, M; POOLE, K. F et al.Proceedings - Electrochemical Society. 2003, pp 171-182, issn 0161-6374, isbn 1-56677-376-8, 12 p.Conference Paper

From ambient intelligence to silicon process technologyVAN DER POEL, C. J.Proceedings - Electrochemical Society. 2003, pp 7-14, issn 0161-6374, isbn 1-56677-376-8, 8 p.Conference Paper

Emerging device solutions for the post-classical CMOS eraDE MEYER, Kristin; COLLAERT, Nadine; KUBICEK, Stefan et al.Proceedings - Electrochemical Society. 2003, pp 291-305, issn 0161-6374, isbn 1-56677-376-8, 15 p.Conference Paper

Fully depleted SOI process and device technology for digital and RF applicationsICHIKAWA, F; NAGATOMO, Y; KATAKURA, Y et al.Proceedings - Electrochemical Society. 2003, pp 546-555, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

FeRAM technology: Today and futureKUNISHIMA, Iwao; NAGEL, Nicolas.Proceedings - Electrochemical Society. 2003, pp 149-151, issn 0161-6374, isbn 1-56677-376-8, 3 p.Conference Paper

Differential silicide thickness for ULSI scalingTAYLOR, William J; SMITH, James; NGUYEN, Jen-Yee et al.Proceedings - Electrochemical Society. 2003, pp 278-287, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

Extremely scaled ultra-thin-body and finfet CMOS devicesBALASUBRAMANIAN, Sdram; CHANG, Leland; CHOI, Yang-Kyu et al.Proceedings - Electrochemical Society. 2003, pp 534-545, issn 0161-6374, isbn 1-56677-376-8, 12 p.Conference Paper

CHANTADA.GONZALES F; MARTINEZ JR; ARRIBAS A et al.1974; INST. GEOL. MINERO ESP., MAPA GEOL., 1:50000; ESP; 1974, NUM. 0155, P. 1 A 34Map

Dendrite growth directions in aluminum-zinc alloysGONZALES, F; RAPPAZ, M.Metallurgical and materials transactions. A, Physical metallurgy and materials science. 2006, Vol 37, Num 9, pp 2797-2806, issn 1073-5623, 10 p.Article

Current status and future prospects in mixed signal SOCMATSUZAWA, Akira.Proceedings - Electrochemical Society. 2003, pp 107-119, issn 0161-6374, isbn 1-56677-376-8, 13 p.Conference Paper

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