Reactive ion etching (RIE) techniques for micromachining applicationsLI, Y. X; WOLFFENBUTTEL, M. R; FRENCH, P. J et al.Sensors and actuators. A, Physical. 1994, Vol 41, Num 1-3, pp 317-323, issn 0924-4247Conference Paper

Post-processing gap reduction in a micromachined resonator for vacuum pressure easurementBILLEP, Detlef; HILLER, Karla; FRÖMEL, Jorg et al.SPIE proceedings series. 2005, pp 341-350, isbn 0-8194-5831-7, 1Vol, 10 p.Conference Paper

A linearly tunable capacitor fabricated by the post-CMOS processDAI, Ching-Liang; LIU, Mao-Chen; LI, Yu-Ren et al.SPIE proceedings series. 2005, pp 642-648, isbn 0-8194-5831-7, 1Vol, 7 p.Conference Paper

Fabrication of deep submicron patterns with high aspect ratio using magnetron reactive ion etching and sidewall processGAO SHIPING; CHEN MENGZHEN.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2708-2710, issn 1071-1023Conference Paper

High temperature operated enhancement-type β-SiC MOSFETFUMA, H; MIURA, A; TADANO, H et al.Japanese journal of applied physics. 1988, Vol 27, Num 11, pp L2143-L2145, issn 0021-4922, part 2Article

Reactive ion etching of quartz and glasses for microfabricationLEECH, P. W; REEVES, G. K.SPIE proceedings series. 1999, pp 839-847, isbn 0-8194-3154-0, 2VolConference Paper

WSi₂/Si Multilayer Sectioning by Reactive Ion Etching for Multilayer Laue Lens FabricationBOUET, N; CONLEY, R; BIANCAROSA, J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7802, issn 0277-786X, isbn 978-0-8194-8298-3, 780203.1-780203.5Conference Paper

Reactive ion etching of diamondSANDHU, G. S; CHU, W. K.Applied physics letters. 1989, Vol 55, Num 5, pp 437-438, issn 0003-6951, 2 p.Article

Reactive ion etching damage to GaAs layers with etch stopsKNOEDLER, C. M; OSTERLING, L; SHTRIKMAN, H et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1988, Vol 6, Num 5, pp 1573-1576, issn 0734-211XArticle

A method to detect oxygen precipitates in silicon wafers by highly selective reactive ion etchingNAKASHIMA, Kenji; WATANABE, Yukihiko; YOSHIDA, Tomoyuki et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 11, pp 4294-4296, issn 0013-4651Article

Bulk micromachining of Si by lithography and reactive ion etching (LIRIE)RANGELOW, I. W; HUDEK, P; SHI, F et al.Vacuum. 1995, Vol 46, Num 12, pp 1361-1369, issn 0042-207XArticle

Independent control of ion density and ion bombardment energy in a dual RF excitation plasmaGOTO, H. H; LÖWE, H.-D; OHMI, T et al.IEEE transactions on semiconductor manufacturing. 1993, Vol 6, Num 1, pp 58-64, issn 0894-6507Article

Characteristics of gas-assisted focused ion beam etchingYOUNG, R. J; CLEAVER, J. R. A; AHMED, H et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 2, pp 234-241, issn 1071-1023Conference Paper

Deep trenches in silicon using photoresist as a maskCABRUJA, E; SCHREINER, M.Sensors and actuators. A, Physical. 1993, Vol 37-38, pp 766-771, issn 0924-4247Conference Paper

Fabrication of sub-20 nm trenches in silicon nitride using CHF₃/O₂ reactive ion etching and oblique metallizationWONG, T. K. S; INGRAM, S. G.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2393-2397, issn 1071-1023Conference Paper

Nanostructure fabrication using lithium fluoride films as an electron beam resistLANGHEINRICH, W; SPANGENBERG, B; BENEKING, H et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2868-2872, issn 1071-1023Conference Paper

Reactive ion etching of GaAs using CH₄: in He, Ne and ArLAW, V. J; INGRAM, S. G; TEWORDT, M et al.Semiconductor science and technology. 1991, Vol 6, Num 5, pp 411-413, issn 0268-1242Article

Annealing behavior of reactive ion etching induced deep levelsMISRA, D; HEASELL, E. L.Journal of the Electrochemical Society. 1990, Vol 137, Num 5, pp 1559-1563, issn 0013-4651Article

Silicon loss and transient etch rate in selective reactive ion etching of oxide overlayersOEHRLEIN, G. S; KALISH, R.Applied physics letters. 1989, Vol 54, Num 26, pp 2698-2700, issn 0003-6951, 3 p.Article

Variable isotropy Deep RIE process for through wafer via holes manufacturingVASILACHE, Dan; COLPO, Sabrina; GIACOMOZZI, Flavio et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8066, issn 0277-786X, isbn 978-0-8194-8655-4, 80662J.1-80662J.9Conference Paper

Analysis of sidewall buildup during trilevel resist etching of metalJAE HEE HA; JUNG, J.-K; SEOL, Y.-S et al.Applied surface science. 1997, Vol 119, Num 3-4, pp 363-368, issn 0169-4332Article

Reactive ion etching technology in thin-film-transistor processingKUO, Y.IBM journal of research and development. 1992, Vol 36, Num 1, pp 69-75, issn 0018-8646Article

Reactive ion etching of GaAs, AlGaAs, and GaSb in Cl₂ and SICl₄PEARTON, S. J; CHAKRABARTI, U. K; HOBSON, W. S et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 4, pp 607-617, issn 0734-211X, 11 p.Article

Reactive ion etching of TiSi₂/n⁺ polysilicon polycide structure for very large scale integrated applicationXU QIUXIA; ZHOU SOUJING; ZHAO YUYIN et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 5, pp 1058-1061, issn 0734-211XArticle

Fabrication of large scale optical components in silicon by reactive ion etchingDARBYSHIRE, D. A; PITT, C. W; STRIDE, A. A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1987, Vol 5, Num 2, pp 575-578, issn 0734-211XArticle