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Plasma etch process characterization : an application of atomic force microscopyWENGE YANG; BHANWAR SINGH.SPIE proceedings series. 1998, pp 30-40, isbn 0-8194-2777-2Conference Paper

Dry processHORIIKE, Yasuhiro; HORI, Masaru; MAEDA, Masahiko et al.Japanese journal of applied physics. 1997, Vol 36, Num 4B, issn 0021-4922, 136 p., 1Conference Proceedings

In situ ellipsometry during plasma etching of SiO₂ films on SiHAVERLAG, M; KROESEN, G. M. W; DE ZEEUW, C. J. H et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 3, pp 529-533, issn 0734-211X, 5 p.Article

In situ laser diagnostic studies of plasma-generated particulate contaminationSELWYN, G. S; SINGH, J; BENNETT, R. S et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1989, Vol 7, Num 4, pp 2758-2765, issn 0734-2101, 8 p.Article

Superhigh-rate plasma jet etching of siliconBARDOS, L; BERG, S; BLOM, H-O et al.Applied physics letters. 1989, Vol 55, Num 16, pp 1615-1617, issn 0003-6951, 3 p.Article

New trends in plasma etching for Ultra Large Scale Integration TechnologyJOUBERT, O.Microelectronic engineering. 1998, Vol 41-42, pp 17-24, issn 0167-9317Conference Paper

Monitoring and control of real power in RF plasma processingZAU, G. C. H; BUTTERBAUGH, J. W; RUMMEL, P et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 3, pp 872-873, issn 0013-4651, 2 p.Article

Uniformity of etching in parallel plate plasma reactorsECONOMOU, D. J; PARK, S.-K; WILLIAMS, G. D et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 1, pp 188-198, issn 0013-4651, 11 p.Article

An overview of dry etching damage and contamination effectFONASH, S. J.Journal of the Electrochemical Society. 1990, Vol 137, Num 12, pp 3885-3892, issn 0013-4651Article

Anomalous regimes for GaAs etching in Cl₂-Ar plasmasD'AGOSTINO, R; CRAMAROSSA, F; FRACASSI, F et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1988, Vol 6, Num 5, pp 1584-1591, issn 0734-211XArticle

Influence of processing parameters on atmospheric pressure plasma etching of polyamide 6 filmsZHIQIANG GAO; SHUJING PENG; JIE SUN et al.Applied surface science. 2009, Vol 255, Num 17, pp 7683-7688, issn 0169-4332, 6 p.Article

Micromasking of plasma etching due to bacteria : A yield detractor for ULSIPERERA, A. H; SATTERFIELD, M. J.IEEE transactions on semiconductor manufacturing. 1996, Vol 9, Num 4, pp 577-580, issn 0894-6507Conference Paper

Independent control of ion density and ion bombardment energy in a dual RF excitation plasmaGOTO, H. H; LÖWE, H.-D; OHMI, T et al.IEEE transactions on semiconductor manufacturing. 1993, Vol 6, Num 1, pp 58-64, issn 0894-6507Article

Surface micromachiningLINDER, C; PARATTE, L; GRETILLAT, M.-A et al.Journal of micromechanics and microengineering (Print). 1992, Vol 2, Num 3, pp 122-132, issn 0960-1317Article

Development of techniques for real-time monitoring and control in plasma etching. I, Response surface modeling of CF₄/O₂ and CF₄/H₂ etching of silicon and silicon dioxideMCLAUGHLIN, K. J; BUTLER, S. W; EDGAR, T. F et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 3, pp 789-799, issn 0013-4651Article

Plasma etching of III-V semiconductors in CH₄/H₂/Ar electron cyclotron resonance dischargesCONSTANTINE, C; JOHNSON, D; PEARTON, S. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 4, pp 596-606, issn 0734-211X, 11 p.Article

A diagnostic approach to plasma-etching kinetics : determination of atom concentrationsREEVES, R. R; RUTTEN, M; RAMASWAMI, S et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 11, pp 3517-3522, issn 0013-4651Article

Thresholds levels and effects of feed gas impurities on plasma etching processesZAU, G. C. H; BASTON, L. D; GRAY, D. C et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 11, pp 3526-3536, issn 0013-4651Article

Damage caused by stored charge during ECR plasma etchingSAMUKAWA, S.Japanese journal of applied physics. 1990, Vol 29, Num 5, pp 980-985, issn 0021-4922, 1Article

Neutral-beam-assisted etching of SiO₂ : a charge-free etching processMIZUTANI, T; YUNOGAMI, T.Japanese journal of applied physics. 1990, Vol 29, Num 10, pp 2220-2222, issn 0021-4922, 1Article

The very high-rate plasma-jet dry etching techniqueBARDOS, L; BERG, S; BLOM, H.-O et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 5, pp 1587-1591, issn 0013-4651Article

Numerical simulation of a CF₄/O₂ plasma and correlation with spectroscopic and etch rate dataSCHOENBORN, P; PATRICK, R; BALTES, H. P et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 1, pp 199-205, issn 0013-4651, 7 p.Article

New trends and limits in plasma etchingPECCOUD, L; LAPORTE, P; ARROYO, J et al.Journal of physics. D, Applied physics (Print). 1987, Vol 20, Num 7, pp 851-857, issn 0022-3727Article