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Hochrateplasmaätzen von einkristallinem Quarz und Quarzglas = High rate plasma etching of monocrystalline quartz and quartz glassesSCHREITER, S.Wissenschaftliche Zeitschrift der Technischen Hochschule Karl-Marx-Stadt. 1989, Vol 31, Num 3, pp 456-461, issn 0372-7610, 6 p.Article

Plasma etch process characterization : an application of atomic force microscopyWENGE YANG; BHANWAR SINGH.SPIE proceedings series. 1998, pp 30-40, isbn 0-8194-2777-2Conference Paper

Dry processHORIIKE, Yasuhiro; HORI, Masaru; MAEDA, Masahiko et al.Japanese journal of applied physics. 1997, Vol 36, Num 4B, issn 0021-4922, 136 p., 1Conference Proceedings

In situ ellipsometry during plasma etching of SiO₂ films on SiHAVERLAG, M; KROESEN, G. M. W; DE ZEEUW, C. J. H et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 3, pp 529-533, issn 0734-211X, 5 p.Article

In situ laser diagnostic studies of plasma-generated particulate contaminationSELWYN, G. S; SINGH, J; BENNETT, R. S et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1989, Vol 7, Num 4, pp 2758-2765, issn 0734-2101, 8 p.Article

Superhigh-rate plasma jet etching of siliconBARDOS, L; BERG, S; BLOM, H-O et al.Applied physics letters. 1989, Vol 55, Num 16, pp 1615-1617, issn 0003-6951, 3 p.Article

Emission spectroscopic investigation of the decomposition of CCl₄ in plasma etching processesTILLER, H.-J; BREITBARTH, F.-W; PFAUCH, G et al.Beiträge aus der Plasmaphysik. 1983, Vol 23, Num 5, pp 519-528, issn 0005-8025Article

Profile control of polysilicon lines with an SF₆/O₂ plasma etch processLIGHT, R. W; BELL, H. B.Journal of the Electrochemical Society. 1983, Vol 130, Num 7, pp 1567-1571, issn 0013-4651Article

XPS/AES investigation of cross contamination in a plasma etcherKARULKAR, P. C; TRAN, N. C.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1985, Vol 3, Num 3, pp 889-892, issn 0734-211XArticle

New trends in plasma etching for Ultra Large Scale Integration TechnologyJOUBERT, O.Microelectronic engineering. 1998, Vol 41-42, pp 17-24, issn 0167-9317Conference Paper

Monitoring and control of real power in RF plasma processingZAU, G. C. H; BUTTERBAUGH, J. W; RUMMEL, P et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 3, pp 872-873, issn 0013-4651, 2 p.Article

Uniformity of etching in parallel plate plasma reactorsECONOMOU, D. J; PARK, S.-K; WILLIAMS, G. D et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 1, pp 188-198, issn 0013-4651, 11 p.Article

Modification of Schottky barriers in silicon by reactive ion etching in NF₃ gas mixturesCHOW, T. P; ASHOK, S; BALIGA, B. J et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 1, pp 156-160, issn 0013-4651Article

Uniform plasma etching of printed circuit boardsRUST, R. D; RHODES, R. J; PARKER, A. A et al.Solid state technology. 1984, Vol 27, Num 4, pp 270-275, issn 0038-111XArticle

Ion extraction of Cl containing plasmas ― Problems and possibilities of the investigations of plasma processesTILLER, H.-J; GÖBEL, R; FÜHR, U et al.Beiträge aus der Plasmaphysik. 1984, Vol 24, Num 5, pp 487-497, issn 0005-8025Article

Langmuir probe measurements on CHF₃ and CF₄ plasmas: the role of ions in the reactive sputter etching of SiO₂ and SiSTEINBRUCHEL, C.Journal of the Electrochemical Society. 1983, Vol 130, Num 3, pp 648-655, issn 0013-4651Article

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Composite metal etching for submicron integrated circuitsRILEY, P. E; BEN-TZUR, M; KAVARI, R et al.IEEE transactions on semiconductor manufacturing. 1995, Vol 8, Num 3, pp 309-313, issn 0894-6507Article

Etude de résines négatives sensibles aux électrons utilisées dans les procédés de microlithographie = Performance of electrosensitive negative resists in microlithographyHOLIL, B; SAGNES, R; SERRE, B et al.Revue de physique appliquée. 1985, Vol 20, Num 3, pp 143-149, issn 0035-1687Article

Plasmachemischer Abbau von Glimmpolymerschichten in einer Sauerstoffentladung = Décomposition chimique des couches polymères déposées par décharge luminescente dans le plasma de la décharge d'oxygène = Plasma chemical etching of glow polymer films in an oxygen dischargeEBERT, W; POLL, H.-U.Wissenschaftliche Zeitschrift der Technischen Hochschule Karl-Marx-Stadt. 1984, Vol 26, Num 5, pp 684-688, issn 0372-7610Article

Anisotropic etching of SiO₂ in low-frequency CF₄/O₂ and NF₃/Ar plasmasDONNELLY, V. M; FLAMM, D. L; DAUTREMONT-SMITH, W. C et al.Journal of applied physics. 1984, Vol 55, Num 1, pp 242-252, issn 0021-8979Article