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IMPROVED DRY ETCHING RESISTANCE OF ELECTRON-BEAM RESIST BY ION EXPOSURE PROCESSMOCHIJI K; WADA Y; OBAYASHI H et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2556-2559; BIBL. 9 REF.Article

A DRY-ETCHED INORGANIC RESISTCHANG MS; CHEN JT.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 10; PP. 892-895; BIBL. 17 REF.Article

Comptes-rendus/3ème Symposium international sur la gravure sèche et le dépôt plasma en microélectronique, Cachan, 26-29 novembre 1985 = Proceedings/3rd international Symposium on dry etching and plasma deposition in microelectronics, Cachan, 26-29 november 1985Le Vide, les couches minces. 1985, Num 229, issn 0223-4335, 283 p.Conference Proceedings

A 90 ns 256 K×1 bit DRAM with double-level Al technologyFUJII, T; MITAKE, K; TADA, K et al.IEEE journal of solid-state circuits. 1983, Vol 18, Num 5, pp 437-440, issn 0018-9200Article

Fabrication of vertical periodic structure on InP and GaAs using only etching gasKOKUBO, Y; OKAMOTO, S.Electronics Letters. 2007, Vol 43, Num 22, pp 1233-1234, issn 0013-5194, 2 p.Article

Amplification in light-induced reaction of Cu with Cl2 in the VUVRAAF, H; GROEN, M; SCHWENTNER, N et al.Applied surface science. 2000, Vol 154-55, pp 536-541, issn 0169-4332Conference Paper

DRY ETCH RESISTANCE OF ORGANIC MATERIALSGOKAN H; ESHO S; OHNISHI Y et al.1983; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1983; VOL. 130; NO 1; PP. 143-146; BIBL. 8 REF.Article

CMS GIVES IMPACT ON DRY ETCHING PROCESS IN VLSI PRODUCTIONFUKUDA M.1982; JEE, J. ELECTRON. ENG.; ISSN 0385-4507; JPN; DA. 1982; VOL. 19; NO 188; PP. 40-43; BIBL. 10 REF.Article

SELECTIVE ISOTROPIC DRY ETCHING OF SI3N4 OVER SIO2SANDERS FHM; DIELEMAN J; PETERS HJB et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2559-2561; BIBL. 7 REF.Article

A NEW CHEMICAL DRY ETCHING.HORIIKE Y; SHIBAGAKI M.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; SUPPL. 1; PP. 13-18; BIBL. 3 REF.; (CONF. SOLID STATE DEVICES. 7. PROC.; TOKYO; 1975)Conference Paper

ETCHING NEEDS FOR VLSIEPHRATH LM.1982; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 7; PP. 87-92; BIBL. 26 REF.Article

IDENTIFICATION AND ELIMINATION OF GATE OXIDE DEFECT ORIGIN PRODUCED DURING SELECTIVE FIELD OXIDATIONITSUMI M; KIYOSUMI F.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 4; PP. 800-806; BIBL. 20 REF.Article

CHROMIUM ETCHING CHARACTERISTICS USING A PLANAR TYPE PLASMA REACTORSAEKI H; WATAKABE Y; TOYODA H et al.1982; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 6; PP. 1049-1063; BIBL. 4 REF.Article

GAS PLASMA ETCHING OF CHROMIUM FILMSSUZUKI Y; YAMAZAKI T; NAKATA H et al.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 9; PART. 1; PP. 1328-1332; BIBL. 11 REF.Article

A systematic dry etching process for profile control of quantum dots and nanoconstrictionsSUTIKNO, Madnarski; HASHIM, Uda; ZUL AZHAR ZAHID JAMAL et al.Microelectronics journal. 2007, Vol 38, Num 8-9, pp 823-827, issn 0959-8324, 5 p.Article

Paraffin surfaces for culture-based detection of mycobacteria in environmental samplesGAOSHAN JING; ELURU, Hima B; POLACZYK, Amy et al.Journal of micromechanics and microengineering (Print). 2005, Vol 15, Num 2, pp 270-276, issn 0960-1317, 7 p.Article

Status of laminar grating manufacturing via lithography at HZBLEMKE, S; SELIGER, T; RUDOLPH, I et al.Microsystem technologies. 2014, Vol 20, Num 10-11, pp 2061-2064, issn 0946-7076, 4 p.Conference Paper

Black silicon method X : a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipmentJANSEN, H. V; DE BOER, M. J; UNNIKRISHNAN, S et al.Journal of micromechanics and microengineering (Print). 2009, Vol 19, Num 3, issn 0960-1317, 033001.1-033001.41Article

Multi-layer resist system for 45nm node and beyond (II)FUJIMURA, Yukihiro; MORIMOTO, Jumpei; ENOMOTO, Tomoyuki et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 634936.1-634936.8, issn 0277-786X, isbn 0-8194-6444-9, 2VolConference Paper

Determining the Electronic Performance Limitations in Top-Down-Fabricated Si Nanowires with Mean Widths Down to 4 nmMIRZA, Muhammad M; MACLAREN, Donald A; SAMARELLI, Antonio et al.Nano letters (Print). 2014, Vol 14, Num 11, pp 6056-6060, issn 1530-6984, 5 p.Article

Transfer of a continuous-relief lenticular array onto a quartz substrate by using SIL combined with the dry-etching methodDENG, Qing-Long; CHEN, Chien-Yue; LIN, Wei-Li et al.Journal of micromechanics and microengineering (Print). 2013, Vol 23, Num 3, issn 0960-1317, 035021.1-035021.5Article

Prevention of sidewall redeposition of etched byproducts in the dry Au etch processAYDEMIR, A; AKIN, T.Journal of micromechanics and microengineering (Print). 2012, Vol 22, Num 7, issn 0960-1317, 074004.1-074004.6Conference Paper

Dry etching technologies for EUV maskIINO, Yoshinori; KARYU, Makoto; ITA, Hirotsugu et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7823, issn 0277-786X, isbn 978-0-8194-8337-9, 782305.1-782305.8, 2Conference Paper

Copper corrosion issue and analysis on copper damascene processSONG, Z. G; NEO, S. P; OH, C. K et al.International Symposium on the Physical & Failure Analysis of Integrated Circuits. 2004, pp 71-74, isbn 0-7803-8454-7, 1Vol, 4 p.Conference Paper

Fabrication of suspended thermally insulating membranes using frontside micromachining of the Si substrate: characterization of the etching processTSEREPI, A; TSAMIS, C; KOKKORIS, G et al.Journal of micromechanics and microengineering (Print). 2003, Vol 13, Num 2, pp 323-329, issn 0960-1317, 7 p.Article

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