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Results 1 to 25 of 6809

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12th International Conference on Metalorganic Vapor Phase EpitaxyBIEFELD, R. M; STRINGFELLOW, G. B.Journal of crystal growth. 2004, Vol 272, Num 1-4, issn 0022-0248, 875 p.Conference Proceedings

MECHANISM AND KINETICS OF THE FORMATION OF ZINC PACK COATINGSVOURLIAS, G; PISTOFIDIS, N; CHRISSAFIS, K et al.Journal of thermal analysis and calorimetry. 2008, Vol 91, Num 2, pp 497-501, issn 1388-6150, 5 p.Article

Growth of ZnSe single crystals from Zn-Se-Zn(NH4)3Cl5 systemHUANYONG LI; WANQI JIE; KEWEI XU et al.Journal of crystal growth. 2005, Vol 279, Num 1-2, pp 5-12, issn 0022-0248, 8 p.Article

CVD diamond detectors for nuclear and dosimetric applicationsMANFREDOTTI, C.Diamond and related materials. 2005, Vol 14, Num 3-7, pp 531-540, issn 0925-9635, 10 p.Conference Paper

Synthesizing single-crystal diamond by repetition of high rate homoepitaxial growth by microwave plasma CVDMOKUNO, Y; CHAYAHARA, A; SODA, Y et al.Diamond and related materials. 2005, Vol 14, Num 11-12, pp 1743-1746, issn 0925-9635, 4 p.Conference Paper

Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of temperature gradientHERRO, Z. G; EPELBAUM, B. M; BICKERMANN, M et al.Journal of crystal growth. 2004, Vol 262, Num 1-4, pp 105-112, issn 0022-0248, 8 p.Article

Synthesis of Ga2O3 chains with closely spaced knots connected by nanowiresDAI, L; YOU, L. P; DUAN, X. F et al.Journal of crystal growth. 2004, Vol 267, Num 3-4, pp 538-542, issn 0022-0248, 5 p.Article

Study of the ZnO crystal growth by vapour transport methodsTENA-ZAERA, R; MARTINEZ-TOMAS, M. C; HASSANI, S et al.Journal of crystal growth. 2004, Vol 270, Num 3-4, pp 711-721, issn 0022-0248, 11 p.Article

The effect of HVPE reactor geometry on GaN growth rate-experiments versus simulationsDAM, C. E. C; GRZEGORCZYK, A. P; HAGEMAN, P. R et al.Journal of crystal growth. 2004, Vol 271, Num 1-2, pp 192-199, issn 0022-0248, 8 p.Article

Characterization of multiple carriers in GaN using variable magnetic-field Hall measurementsSWARTZ, C. H; TOMPKINS, R. P; MYERS, T. H et al.Journal of electronic materials. 2004, Vol 33, Num 5, pp 412-417, issn 0361-5235, 6 p.Conference Paper

Characterization of diamond nanoplateletsCHEN, Hou-Guang; LI CHANG.Diamond and related materials. 2004, Vol 13, Num 4-8, pp 590-594, issn 0925-9635, 5 p.Conference Paper

Cutting forces evolution with tool wear in sintered hardmetal turning with CVD diamondBELMONTE, M; OLIVEIRA, F. J; SACRAMENTO, J et al.Diamond and related materials. 2004, Vol 13, Num 4-8, pp 843-847, issn 0925-9635, 5 p.Conference Paper

Molecular beam epitaxy growth of high-quality arsenic-doped HgCdTeEDWALL, D; PIQUETTE, E; ELLSWORTH, J et al.Journal of electronic materials. 2004, Vol 33, Num 6, pp 752-756, issn 0361-5235, 5 p.Conference Paper

Scanning capacitance microscopy investigations of InGaAs/InP quantum wellsDOUHERET, O; MAKNYS, K; ANAND, S et al.Thin solid films. 2004, Vol 459, Num 1-2, pp 67-70, issn 0040-6090, 4 p.Conference Paper

Initial oxidation kinetics of copper (110) film investigated by in situ UHV-TEMGUANGWEN ZHOU; YANG, Judith C.Surface science. 2003, Vol 531, Num 3, pp 359-367, issn 0039-6028, 9 p.Article

The application of VLS growth technique to bulk semiconductorsYASHINA, L. V; SHTANOV, V. I; YANENKO, Z. G et al.Journal of crystal growth. 2003, Vol 252, Num 1-3, pp 68-78, issn 0022-0248, 11 p.Article

Thermal system design and dislocation reduction for growth of wide band gap crystals: application to SiC growthMA, R.-H; ZHANG, H; DUDLEY, M et al.Journal of crystal growth. 2003, Vol 258, Num 3-4, pp 318-330, issn 0022-0248, 13 p.Article

Growth of bulk AlN crystals by vaporization of aluminum in a nitrogen atmosphereSCHLESSER, R; SITAR, Z.Journal of crystal growth. 2002, Vol 234, Num 2-3, pp 349-353, issn 0022-0248Article

Global modeling of the SiC sublimation growth process: prediction of thermoelastic stress and control of growth conditionsSELDER, M; KADINSKI, L; DURST, F et al.Journal of crystal growth. 2001, Vol 226, Num 4, pp 501-510, issn 0022-0248Article

Single crystal growth of non-stoichiometric β-FeSi2 by chemical transport reactionBEHR, G; IVANENKO, L; VINZELBERG, H et al.Thin solid films. 2001, Vol 381, Num 2, pp 276-281, issn 0040-6090Article

The CVD growth of micro crystals of diamondCHUNG, Hsiao-Kuo; SUNG, James C.Diamond and related materials. 2001, Vol 10, Num 9-10, pp 1584-1587, issn 0925-9635Conference Paper

Van -Der Waals epitaxial growth mechanism in Bi-doped single crystals of lead iodideJAIN, A; TRIGUNAYAT, G. C.Ferroelectrics (Print). 2001, Vol 250, Num 1-4, pp 183-185, issn 0015-0193Conference Paper

Si3N4 fibers synthesized by thermal plasma CVDBOUYER, Etienne; HENNE, Rudolf H; MÜLLER, Matthias et al.Chemical vapor deposition (Print). 2001, Vol 7, Num 4, pp 139-142, issn 0948-1907Article

Vapor growth and characterization of ZnSeTe solid solutionsSU, C.-H; SHA, Y.-G; VOLZ, M. P et al.Journal of crystal growth. 2000, Vol 216, Num 1-4, pp 104-112, issn 0022-0248Article

Crystal growth and characterization of layered semimagnetic semiconductor compounds Cd1-yMnyIn2-2xGa2xS4ATTOLINI, G; SAGREDO, V.Materials chemistry and physics. 2000, Vol 66, Num 2-3, pp 274-277, issn 0254-0584Conference Paper

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